AOT400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT400 is Pb-free (meets ROHS & Sony
259 specifications). AOT400L is a Green Product
ordering option. AOT400 and AOT400L are
electrically identical.
VDS (V) = 75V
ID = 110 A
(VGS = 10V)
RDS(ON) < 4.7 mΩ (VGS = 10V)
RDS(ON) < 5.2 mΩ (VGS = 6V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
V
A
110
IAR
100
A
EAR
1500
mJ
200
300
W
150
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
±20
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
110
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
75
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
65
0.25
75
0.5
°C/W
°C/W
AOT400
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
100
VSD
IS
7.2
8.2
VGS=6V, ID=30A
4.6
5.2
VDS=5V, ID=30A
106
VDS=15V, ID=70A
200
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
0.7
8390
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
µA
nA
V
A
4.7
IS=1A, VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Coss
4
4.2
Static Drain-Source On-Resistance
Forward Transconductance
2.8
200
VGS=10V, ID=30A
gFS
5
2
Units
V
TJ=55°C
IGSS
Max
75
VDS=75V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
mΩ
S
1
V
110
A
10500
pF
1060
pF
450
pF
1.2
1.5
Ω
167
210
nC
40
nC
Qgd
Gate Drain Charge
45
nC
tD(on)
Turn-On DelayTime
29
ns
tr
Turn-On Rise Time
41
ns
90
ns
34
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
64
80
180
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
80
10V
6V
175
VDS=5V
150
60
5V
ID(A)
ID (A)
125
100
125°C
40
4.5V
75
25°C
50
20
VGS=4V
25
0
0
0
1
2
3
4
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
6
Normalized On-Resistance
2.2
VGS=6V
5
RDS(ON) (mΩ)
2.5
4
VGS=10V
3
2
VGS=10V, 30A
1.8
1.6
VGS=6V,30A
1.4
1.2
1
2
0
20
40
60
80
0.8
100
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
12
1.0E+01
ID=30A
10
125°C
8
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
1.0E-01
6
25°C
1.0E-02
25°C
4
1.0E-03
1.0E-04
2
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
VDS=30V
ID=30A
10
Ciss
Capacitance (nF)
VGS (Volts)
8
6
4
8
6
4
Coss
2
Crss
2
0
0
0
40
80
120
160
200
0
15
30
45
60
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
1000
TJ(Max)=175°C, TA=25°C
10µs
RDS(ON)
limited
10ms
10.0
DC
600
400
1.0
200
0.0001
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TA=25°C
800
100µs
Power (W)
ID (Amps)
100.0
75
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=0.5°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOT400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
100
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
80
tA =
60
40
L ⋅ ID
BV − VDD
TA=25°C
20
0
0.00001
150
100
0
0.0001
0.001
0.01
100
80
60
40
20
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
120
Current rating ID(A)
200
50
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
250
175
175