AON5802A, AON5802AL
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON5802A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is
ESD protected. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-drain
configuration. Standard Product AON5802A is Pb-free (meets
ROHS & Sony 259 specifications). AON5802AL is a Green
Product ordering option. AON5802A and AON5802AL are
electrically identical.
DFN 2X5
G1
S1
G2
S1
S2
Features
VDS (V) = 30V
ID = 7.2A (VGS = 4.5V)
RDS(ON) < 20 mΩ (VGS = 4.5V)
RDS(ON) < 22 mΩ (VGS = 4.0V)
RDS(ON) < 24 mΩ (VGS = 3.1V)
RDS(ON) < 30 mΩ (VGS = 2.5V)
ESD Protected
D1
S2
D2
D1/D2
Top View
G2
S2
G1
S2
S1
G1
S1
Bottom View
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current RθJA=75°C/W TA=70°C
B
Pulsed Drain Current
Power Dissipation
RθJA=75°C/W
A
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
30
V
A
65
1.7
W
1.0
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Units
5.6
PDSM
Junction and Storage Temperature Range
S2
7.2
IDM
TA=70°C
Maximum
±12
ID
TA=25°C
G2
RθJA
RθJL
Typ
30
61
4.5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
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AON5802A, AON5802AL
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
65
VGS=4.5V, ID=7.2A
10
TJ=125°C
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
17
20
13
17.2
22
15
19
24
VGS=2.5V, ID=3A
16
22
30
VDS=5V, ID=7.2A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7.2A
37
0.5
µA
V
A
VGS=3.1V, ID=4A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
13
30
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Coss
1.5
26
VSD
IS
1
20
Forward Transconductance
µA
V
VGS=4.0V, ID=4A
gFS
Units
V
VDS=24V, VGS=0V
IGSS
Static Drain-Source On-Resistance
Max
30
BVGSO
RDS(ON)
Typ
0.76
mΩ
S
0.9
V
4.5
A
1115
pF
125
pF
100
pF
1.5
Ω
10.7
nC
2.1
nC
nC
Qgd
Gate Drain Charge
4.3
tD(on)
Turn-On DelayTime
3.4
ns
tr
Turn-On Rise Time
11.2
ns
tD(off)
Turn-Off DelayTime
27.2
ns
tf
Turn-Off Fall Time
6.7
ns
24.6
ns
nC
trr
Qrr
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
IF=7.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs
12.9
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4: Sep. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON5802A, AON5802AL
20
65
60
55
50
45
40
35
30
25
20
15
10
5
0
10V
4.5V
VDS=5V
15
3V
ID(A)
ID (A)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2.5V
125°C
5
VGS=2V
25°C
0
0
1
2
3
4
0
5
0.5
40
1.5
2
2.5
Normalized On-Resistance
1.8
VGS=2.5V
30
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
20
VGS=4.5V
10
VGS=4.5V
ID=7.2A
1.6
1.4
VGS=2.5V
ID=3A
1.2
1.0
0
0
5
10
15
20
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=7.2A
125°C
1.0E+00
50
1.0E-01
125°C
30
25°C
IS (A)
40
RDS(ON) (mΩ)
50
1.0E-02
1.0E-03
20
25°C
1.0E-04
10
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON5802A, AON5802AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=7.2A
8
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
800
Coss
400
2
0
Crss
0
0
4
8
12
16
20
24
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
30
200
100.0
RDS(ON)
limited
10µs
10.0
ID (Amps)
100µs
1ms
1.0
DC
10ms
100ms
1s
10s
TJ(Max)=150°C, TA=25°C
0.1
0.1
Power (W)
160
1
10
TJ(Max)=150°C
TA=25°C
120
80
40
0
0.0001
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.00001
Ton
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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