AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V
5.8A
RDS(ON) (at VGS=10V)
< 28mΩ
RDS(ON) (at VGS = 4.5V)
< 33mΩ
RDS(ON) (at VGS = 2.5V)
< 52mΩ
SOT23
Top View
D
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 8: Dec 2011
Steady-State
Steady-State
A
30
W
0.9
TJ, TSTG
Symbol
t ≤ 10s
V
1.4
PD
TA=70°C
±12
4.9
IDM
TA=25°C
Units
V
5.8
ID
TA=70°C
Maximum
30
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
0.65
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
100
nA
1.05
1.45
V
18
28
28
39
VGS=4.5V, ID=5A
19
33
mΩ
VGS=2.5V, ID=4A
24
52
mΩ
VGS=10V, ID=5.8A
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=5.8A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=4.5V, VDS=15V, ID=5.8A
1.5
mΩ
S
1
V
2
A
630
pF
75
pF
50
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
3
4.5
6
7
Ω
nC
1.3
nC
1.8
nC
3
ns
VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω
2.5
ns
25
ns
4
ns
IF=5.8A, dI/dt=100A/µs
8.5
Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs
2.6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: Dec 2011
www.aosmd.com
Page 2 of 5
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
10V
35
3V
VDS=5V
4.5V
12
30
2.5V
9
ID(A)
ID (A)
25
20
6
15
25°C
125°C
10
3
VGS=2V
5
0
0
0
1
2
3
4
0
5
30
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15
VGS=10V
VGS=4.5V
Id=5A
1.6
1.4
17
1.2
5
VGS=10V
Id=5.8A2
10
1
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
50
1.0E+01
ID=5.8A
1.0E+00
40
40
125°C
30
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 8: Dec 2011
2
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1000
VDS=15V
ID=5.8A
4
800
Capacitance (pF)
VGS (Volts)
Ciss
3
2
600
400
Coss
1
200
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
Crss
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
10.0
100
10
10s
DC
1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: Dec 2011
www.aosmd.com
Page 4 of 5
AO3400
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 8: Dec 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
www.aosmd.com
Page 5 of 5