AO3402
30V N-Channel MOSFET
General Description
Product Summary
The AO3402 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V
4A
RDS(ON) (at VGS=10V)
< 52mΩ
RDS(ON) (at VGS =4.5V)
< 65mΩ
RDS(ON) (at VGS =2.5V)
< 85mΩ
SOT23
Top View
D
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 6: Jan. 2011
Steady-State
Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol
t ≤ 10s
V
15
PD
TA=70°C
±12
3.2
IDM
TA=25°C
B
Units
V
4
ID
TA=70°C
C
Maximum
30
RθJA
RθJL
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-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
15
Units
V
1
VGS(th)
±100
nA
1
1.5
V
43
52
70
84
VGS=4.5V, ID=3A
47
65
mΩ
VGS=2.5V, ID=2A
60
85
mΩ
14
1
V
1.5
A
VGS=10V, ID=4A
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=3.6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.75
mΩ
S
185
235
285
pF
25
35
45
pF
10
18
25
pF
2.1
4.3
6.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
12
Qg(4.5V) Total Gate Charge
4.7
nC
0.95
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=4A
nC
Qgd
Gate Drain Charge
1.6
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
1.5
ns
tD(off)
Turn-Off DelayTime
17.5
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Qrr
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=3Ω
IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8.5
11
2.6
3.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Jan. 2011
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Page 2 of 5
AO3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
10V
VDS=5V
3V
2.5V
12
8
4.5V
9
ID(A)
ID (A)
6
125°C
4
6
VGS=2.0V
3
2
0
0
0
1
2
3
4
25°C
0
5
80
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
VGS=2.5V
70
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
60
VGS=4.5V
50
40
VGS=10V
VGS=4.5V
ID=3A
1.6
1.4
VGS=10V
17
ID=4A
1.2
VGS=2.5V
ID=2A
1
5
2
10
0.8
30
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+02
ID=4A
1.0E+01
100
40
125°C
80
60
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
40
25°C
25°C
1.0E-04
1.0E-05
20
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6: Jan. 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=15V
ID=4A
350
8
Capacitance (pF)
VGS (Volts)
300
6
4
250
Ciss
200
150
100
Coss
2
50
0
Crss
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
1000
RDS(ON)
limited
10µs
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
10.0
100
10
10s
DC
1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Jan. 2011
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Page 4 of 5
AO3402
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 6: Jan. 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5