AO4800B
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4800B uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters. Standard Product AO4800B is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
S2
G2
S1
G1
1
2
3
4
8
7
6
5
G2
G1
SOIC-8
Continuous Drain
Current AF
TA=25°C
B
Maximum
30
Units
V
±12
V
6.9
TA=70°C
ID
IDM
TA=25°C
Power Dissipation
B
Avalanche Current
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Pulsed Drain Current
D2
D1
D2
D2
D1
D1
40
1.9
PD
TA=70°C
A
5.8
W
1.2
IAR
12
A
Repetitive avalanche energy 0.3mH
EAR
22
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
B
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientAF
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Alpha & Omega Semiconductor, Ltd.
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Typ
55
90
40
Max
62.5
110
48
Units
°C/W
°C/W
°C/W
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AO4800B
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
40
5
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
A
VGS=4.5V, I D=6A
23
32
mΩ
VGS=2.5V, I D=5A
34
50
mΩ
1
V
4.5
A
1100
pF
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
V
27
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Rg
nA
1.5
40
Forward Transconductance
Crss
100
20
gFS
Output Capacitance
1
µA
25
TJ=125°C
VSD
Coss
1
TJ=55°C
VGS=10V, I D=6.9A
IS
Units
V
0.002
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
IDSS
RDS(ON)
Typ
10
26
S
0.71
900
mΩ
VGS=0V, VDS=15V, f=1MHz
88
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
10
12
VGS=4.5V, V DS=15V, I D=8.5A
1.8
nC
pF
65
pF
Ω
nC
Qgd
Gate Drain Charge
3.75
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
3.5
ns
21.5
ns
16.8
20
8
12
2.7
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge
IF=5A, dI/dt=100A/µs
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4800B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
40
3V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
30
2.5V
125°C
8
20
25°C
10
4
VGS=2V
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
60
RDS(ON) (mΩ)
Normalized On-Resistance
1.7
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
VGS=4.5V
1.5
VGS=10V
1.3
VGS=2.5V
1.1
VGS=2.5V
0.9
0.7
VGS=4.5
0.5
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100 125 150 175
1.0E+01
90
1.0E+00
80
70
-25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
ID=6.9A
1.0E-01
125°C
60
IS (A)
RDS(ON) (mΩ)
VGS=10V
50
125°C
1.0E-02
1.0E-03
40
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS
OR USES AS CRITICAL
25°C
1.0E-04
COMPONENTS
IN25°C
LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
30
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4800B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=6.9A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1000
800
600
400
Crss
1
Coss
200
0
0
0
2
4
6
8
10
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Power (W)
ID (Amps)
20
25
30
TJ(Max)=150°C
TA=25°C
40
10.0
10µs
30
20
1ms
10
10ms
DC
10s
1s
0.1
0.1
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
15
50
TJ(Max)=150°C
TA=25°C
1.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
5
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT
OR USES AS CRITICAL
D
0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
TonIMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com