GSMN6058
60V N-Channel MOSFET
Features
● V DS =60V,ID =58A
RDS(ON) <16mΩ @ VGS=10V (Typ.13mΩ)
● High Density Cell Designed for Ultra-Low Rdson
● Fully Characterized Avalanche Voltage and Current
● Stability and Uniformity with High EAS
● Excellent Heat Dissipation Capability
● Advanced Process Technology for High ESD Capability
TO-220
Marking and Pin
Assignment
Schematic Diagram
Applications
● Power Switching Application
● LED Backlighting
● Uninterruptible Power Supply
Description
The GSMN6058 utilizes the latest processing techniques to achieve high cell density, low on-resistance and
high repetitive avalanche rating. These features make this device extremely efficient and reliable device for
use in power switching applications and a wide variety of other applications.
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
58
A
ID (100°C)
41
A
Pulsed Drain Current
IDM
120
A
Maximum Power Dissipation
PD
85
W
0.57
W/°C
EAS
290
mJ
TJ,TSTG
-55 To 175
°C
RθJC
1.76
°C/W
Drain Current-Continuous
Drain Current-Continuous(TC=100°C)
Debating Factor
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Thermal Characteristics
Thermal Resistance,Junction-to-Case(Note 2)
1/6
GSMN6058
60V N-Channel MOSFET
Electrical Characteristics (TC=25°C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
-
13
16
mΩ
gFS
VDS=5V,ID=30A
30
-
-
S
-
2498
-
PF
-
185
-
PF
-
80
-
PF
-
12
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=1Ω
-
5.2
-
nS
td(off)
VGS=10V,RGEN=3Ω
-
38
-
nS
-
27
-
nS
-
36
-
nC
-
9.9
-
nC
-
6.6
-
nC
-
-
1.2
V
-
-
90
A
-
35
nS
-
47
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VGS=0V,IS=30A
VSD
IS
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
TJ = 25°C, IF =30A
di/dt = 100A/μs
(Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
2/6
GSMN6058
60V N-Channel MOSFET
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
3/6
GSMN6058
60V N-Channel MOSFET
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristic Curves
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
4/6
GSMN6058
60V N-Channel MOSFET
Power Dissipation (W)
C Capacitance (pF)
Typical Electrical and Thermal Characteristic Curves
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
Power De-rating
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current- JunctionTemperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
5/6
GSMN6058
60V N-Channel MOSFET
Package Outline Dimensions
Symbol
TO-220
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
www.goodarksemi.com
7.500 REF.
3.400
0.295 REF.
3.800
6/6
0.134
0.150
Doc.USGSMN6058x2.0