AO4828
60V Dual N-Channel MOSFET
General Description
Features
The AO4828 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = 60V
ID = 4.5A (VGS = 10V)
RDS(ON) < 56mΩ (VGS = 10V)
RDS(ON) < 77mΩ (VGS = 4.5V)
100% UIS tested
100% Rg tested
SOIC-8
Top View
D
1
Bottom View
D
2
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
AF
Current
VGS
TA=25°C
TA=70°C
TA=25°C
Avalanche Current B
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
±20
V
ID
3.6
IDM
20
W
1.28
IAR, IAS
19
A
EAR, EAS
18
mJ
TJ, TSTG
-55 to 150
°C
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
2
PD
TA=70°C
Repetitive avalanche energy 0.1mH
Units
V
4.5
Pulsed Drain Current B
Power Dissipation
Maximum
60
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
60
Units
°C/W
°C/W
°C/W
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AO4828
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Units
V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
µA
5
VGS=10V, ID=4.5A
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
IDSS
RDS(ON)
Typ
TJ=125°C
VGS=4.5V, ID=3A
100
nA
2.1
3
V
46
56
80
100
64
77
mΩ
1
V
A
mΩ
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
3
A
ISM
Pulsed Body Diode Current B
20
A
11
0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
450
VGS=0V, VDS=30V, f=1MHz
Qgs
Gate Source Charge
540
60
VGS=10V, VDS=30V, ID=4.5A
1.3
pF
pF
25
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
S
pF
1.65
2
Ω
8.5
10.5
nC
4.3
5.5
nC
1.6
nC
Qgd
Gate Drain Charge
2.2
nC
tD(on)
Turn-On DelayTime
4.7
ns
tr
Turn-On Rise Time
2.3
ns
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
IF=4.5A, dI/dt=100A/µs
15.7
ns
1.9
ns
27.5
35
32
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AO4828
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10.0
V
5.0V
VDS=5V
15
125°C
ID(A)
ID (A)
10
4.5V
10
4.0V
5
5
25°C
VGS=3.5V
0
0
1
2
3
4
0
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
4
4.5
5
2
Normalized On-Resistance
90
80
RDS(ON) (mΩ )
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=4.5V
70
60
50
VGS=10V
40
30
20
VGS=10V
1.8
ID=4.5A
1.6
VGS=4.5V
ID=3.0A
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
1.0E+01
ID=4.5A
140
1.0E+00
125°C
1.0E-01
120
IS (A)
RDS(ON) (mΩ )
3
125°C
100
1.0E-02
25°C
1.0E-03
80
25°C
60
1.0E-04
40
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4828
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS=30V
ID= 4.5A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
200
Crss
0
0
0
1
2
3
4
5
6
7
8
9
10
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
1ms
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
30
Power (W)
ID (Amps)
10.0
10ms
TJ(Max)=150°C
TA=25°C
10µs
100µs
0.1s
20
10
DC
0
0.001
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
40
40
RDS(ON)
limited
10
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
0.1
20
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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