N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
2N7077
•
VDSS = 400V, ID(CONT) = 15A, RDS(on) = 300mΩ
•
Hermetic Isolated Metal TO-254AA Package
•
Integral Body Diode
•
High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless
VDS
VGS
ID
ID
IDM
PD
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Tc = 25°C
Continuous Drain Current
TJ = 150°C
Tc = 100°C
Continuous Drain Current
(1)
Pulsed Drain Current
Tc = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
otherwise stated)
400V
±20V
15A
9.5A
60A
150W
1.2W/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbol
Parameter
Max
RθJC
Thermal Resistance Junction to Case
0.83
RθJA
Thermal Resistance Junction to Ambient
50
Units
°C/W
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab Limited
Telephone +44 (0) 1455 556565
Email: sales@semelab-tt.com
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website: http://www.semelab-tt.com
Document Number 9736
Issue 1
Page 1 of 3
N-CHANNEL POWER MOSFET
2N7077
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 250µA
400
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250µA
2
IGSS
Forward Gate-Source
Leakage
VDS = 0V
VGS = ± 20
IDSS
Zero Gate Voltage
Drain Current
VDS = 320V
VGS = 0
25
TJ = 125°C
250
(2)
ID(on)
RDS(on)
(2)
gfs
On-State Drain Current
(2)
Static Drain-Source
On-State Resistance
Forward Transconductance
Min.
Typ.
Max.
V
4
± 100
nA
µA
VDS = 10V
VGS = 10V
VGS = 10V
ID = 9.5A
300
TJ = 125°C
660
VDS = 15V
Units
15
I DS = 9.5A
A
14
24
mΩ
S(Ʊ)
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
2700
Coss
Output Capacitance
VDS = 25V
450
Crss
Reverse Transfer
Capacitance
f = 1.0MHz
160
Qg
Total Gate Charge
VGS = 10V
77
Qgs
Gate-Source Charge
ID = 15A
14
Qgd
Gate-Drain Charge
VDS = 200V
39
td(on)
Turn-On Delay Time
VDD = 100V
14
35
tr
Rise Time
ID = 27.4A
30
60
td(off)
Turn-Off Delay Time
VGS = 10V
54
150
tf
Fall Time
RG = 2.35Ω
15
75
pF
nC
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
(1)
ISM
VSD
(2)
Continuous Source Current
15
Pulse Source Current
60
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Forward Turn-On Time
Semelab Limited
Telephone +44 (0) 1455 556565
Email: sales@semelab-tt.com
IF = 15A
TJ = 25°C
IF = 15A
Di/dt = 100 A/µs
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website: http://www.semelab-tt.com
0.85
1.7
A
V
350
ns
2
µC
Document Number 9736
Issue 1
Page 2 of 3
N-CHANNEL POWER MOSFET
2N7077
MECHANICAL DATA
Dimensions in mm (Inches)
6.32 (0.249)
6.60 (0.260)
13.59 (0.535)
13.84 (0.545)
1.02 (0.040)
1.27 (0.050)
20.07 (0.790)
20.32 (0.800)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
TO-254AA
PIN 1 – Drain
Semelab Limited
Telephone +44 (0) 1455 556565
Email: sales@semelab-tt.com
Isolated Metal Package
PIN 2 – Source
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website: http://www.semelab-tt.com
PIN 3 - Gate
Document Number 9736
Issue 1
Page 3 of 3