AO7402
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7402 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. Standard Product AO7402 is Pb-free (meets ROHS
& Sony 259 specifications). AO7402L is a Green Product
ordering option. AO7402 and AO7402L are electrically
identical.
VDS (V) = 20V
ID = 1.6 A (V GS = 4.5V)
RDS(ON) < 90mΩ (VGS = 4.5V)
RDS(ON) < 105mΩ (VGS = 2.5V)
RDS(ON) < 130mΩ (VGS = 1.8V)
SC-70
(SOT-323)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
V
Junction and Storage Temperature Range
0.35
W
0.22
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
10
PD
TA=70°C
Alpha Omega Semiconductor, Ltd.
±8
1.2
ID
IDM
B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
1.6
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
300
340
280
°C
Max
360
425
320
Units
°C/W
°C/W
°C/W
AO7402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=16V, VGS=0V
20
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
VGS=4.5V, ID=1.6A
RDS(ON)
gFS
VSD
IS
Typ
V
µA
100
nA
0.55
0.8
V
75
106
90
130
mΩ
86
105
mΩ
103
5.5
0.69
130
mΩ
1
S
V
0.5
A
10
TJ=125°C
Static Drain-Source On-Resistance
Units
1
5
TJ=55°C
0.4
Max
VGS=2.5V, ID=1.5A
VGS=1.8V, ID=1.4A
Forward Transconductance
VDS=5V, ID=1.6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
458
76
54
pF
pF
pF
VGS=0V, VDS=0V, f=1MHz
3
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
VGS=4.5V, VDS=10V, ID=1.6A
6.05
0.7
1.45
nC
nC
nC
VGS=5V, VDS=10V, RL=6.25Ω,
RGEN=6Ω
7.3
5.6
40
11
ns
ns
ns
ns
12.2
3.23
ns
nC
tr
tD(off)
tf
trr
Qrr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
IF=1.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=1.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
10
8V
4.5V
VDS=5V
12
3V
2.5V
8
6
4
4
VGS=1.5V
2
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
Normalized On-Resistance
1.6
VGS=1.8V
120
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
140
VGS=2.5V
100
80
VGS=4.5V
60
VGS=2.5V
VGS=1.8V
1.4
ID=1.6A
VGS=4.5V
1.2
1
0.8
0
2
4
6
8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
1E+01
1E+00
140
125°C
ID=1.6A
1E-01
120
IS (A)
RDS(ON) (mΩ)
125°C
2V
ID(A)
ID (A)
25°C
8
125°C
100
1E-02
25°C
1E-03
25°C
80
1E-04
1E-05
60
1
2
3
4
5
6
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.4
AO7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=1.6A
4
3
2
1
600
Ciss
400
Coss
200
0
0
0
2
4
6
0
8
20
12
10µs
10ms 1ms
0.1s
1.0
8
4
1s
10s
DC
0
0.001
0.1
1
10
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
15
TJ(Max)=150°C
TA=25°C
100µs
10.0 R
DS(ON)
limited
0.1
10
16
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
100.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ZθJA Normalized Transient
Thermal Resistance
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000