AOD2922
100V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power AlphaMOS (αMOS MV) technology
• Very Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
100V
7A
RDS(ON) (at VGS=10V)
< 140mΩ
RDS(ON) (at VGS=4.5V)
< 176mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
TO-252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD2922
TO-252
Tape & Reel
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
V
A
10
3.5
IDSM
TA=70°C
±20
5
IDM
TA=25°C
Continuous Drain
Current
Units
V
7
ID
TC=100°C
C
Maximum
100
A
3
IAS
3
A
Avalanche energy L=0.1mH C
EAS
0.5
mJ
VDS Spike
VSPIKE
120
V
Avalanche Current
Power Dissipation
10us
TC=25°C
B
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: October 2013
5.0
Steady-State
Steady-State
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
W
8.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
17
RθJA
RθJC
-55 to 175
Typ
20
40
7.3
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°C
Max
25
50
8.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.7
±100
nA
2.2
2.7
V
117
140
224
270
176
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
140
gFS
Forward Transconductance
VDS=5V, ID=5A
8.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=5A
Coss
Units
V
VDS=100V, VGS=0V
IDSS
Max
mΩ
S
1.1
V
7
A
250
310
pF
19
30
pF
2.5
8
pF
Ω
10.5
16
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
3.8
10
nC
Qg(4.5V)
Total Gate Charge
1.8
6
nC
Qgs
Gate Source Charge
0.8
nC
Qgd
Gate Drain Charge
0.8
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, ID=5A
5
mΩ
VGS=10V, VDS=50V, RL=10Ω,
RGEN=3Ω
3
ns
19
ns
5
ns
IF=5A, dI/dt=500A/µs
16
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
52
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
18
VDS=5V
10V
15
15
5V
12
12
9
ID(A)
ID (A)
4.5V
4V
9
6
6
3.5V
125°C
3
3
25°C
VGS=3V
0
0
0
1
2
3
4
1
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
240
2.8
Normalized On-Resistance
2.6
RDS(ON) (mΩ
Ω)
200
VGS=4.5V
160
120
VGS=10V
80
2.4
VGS=10V
ID=5A
2.2
2
1.8
1.6
1.4
VGS=4.5V
ID=3A
1.2
1
0.8
40
0
2
4
6
8
0
10
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
400
1.0E+02
ID=5A
350
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
300
250
1.0E-01
200
1.0E-02
150
1.0E-03
100
125°C
25°C
1.0E-04
25°C
50
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=50V
ID=5A
250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
200
150
Coss
100
50
Crss
0
0
0
1
2
3
4
5
0
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
80
100
VDS (Volts)
Figure 8: Capacitance Characteristics
200
100.0
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
limited
1.0
150
Power (W)
10.0
ID (Amps)
40
100µs
1ms
10ms
DC
0.1
100
50
TJ(Max)=175°C
TC=25°C
0
0.0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001 0.001
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=8.8°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
8
Current rating ID(A)
Power Dissipation (W)
15
10
5
0
6
4
2
0
0
25
50
75
100
125
150
175
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TJ(Max)=150°C
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: October 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6