AO3409
30V P-Channel MOSFET
General Description
Product Summary
The AO3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-2.6A
RDS(ON) (at VGS=-10V)
< 110mΩ
RDS(ON) (at VGS=-4.5V)
< 180mΩ
VDS
SOT23
Top View
D
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 9: November 2010
Steady-State
Steady-State
A
1.4
W
1
TJ, TSTG
Symbol
t ≤ 10s
V
-20
PD
TA=70°C
±20
-2.2
IDM
TA=25°C
Power Dissipation B
Units
V
-2.6
ID
TA=70°C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
nA
-2.4
V
77
110
100
140
VGS=-4.5V, ID=-2A
125
180
mΩ
5
-1
V
-1.5
A
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-2.6A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
A
-0.8
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.9
VGS=-10V, ID=-2.6A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
197
VGS=0V, VDS=-15V, f=1MHz
mΩ
S
240
42
pF
pF
26
37
pF
7.2
11.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.3
5.2
nC
Qg(4.5V) Total Gate Charge
2.2
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-2.6A
3.5
0.7
nC
1.1
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=5.8Ω,
RGEN=3Ω
4.1
ns
11.8
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-2.6A, dI/dt=100A/µs
11.3
3.8
Qrr
Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs
4.4
ns
14
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: November 2010
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Page 2 of 5
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
-10V
VDS=-5V
-6V
-8V
12
8
-5V
6
-ID(A)
-ID (A)
9
-4.5V
6
4
125°C
-4V
2
3
25°C
VGS=-3.5V
0
0
0
1
2
3
4
0
5
1
200
3
4
5
6
1.6
Normalized On-Resistance
180
160
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
140
VGS=-4.5V
120
100
80
60
1.4
VGS=-10V
ID=-2.6A
1.2
VGS=-4.5V
ID=-2A
1
17
5
2
10
VGS=-10V
0.8
40
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
300
1.0E+02
ID=-2.6A
1.0E+01
260
40
1.0E+00
180
-IS (A)
RDS(ON) (mΩ )
220
125°C
140
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
25°C
100
1.0E-04
1.0E-05
60
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 9: November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=-15V
ID=-2.6A
250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
200
150
100
2
Coss
50
0
Crss
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
10.0
1000
1.0
0.1
100µs
1ms
10ms
100ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
Power (W)
-ID (Amps)
10µs
RDS(ON)
limited
100
10
0.0
1
0.01
0.1
1
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 9: November 2010
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Page 4 of 5
AO3409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 9: November 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5