AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4620/L uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.AO4620
and AO4620L are electrically identical.
-RoHS Compliant
-AO4620L is Halogen Free
n-channel
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
< 24mΩ (VGS=10V)
< 36mΩ (VGS=4.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D2
D1
D1
SOIC-8
p-channel
-30V
-5.3A (VGS = -10V)
RDS(ON)
< 38mΩ (VGS = -10V)
< 60mΩ (VGS = -4.5V)
D1
G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
7.2
TA=25°C
F
Current
6.2
TA=70°C
ID
B
Pulsed Drain Current
IDM
30
TA=25°C
2
PD
F
Power Dissipation
TA=70°C
1.44
Avalanche Current B
IAR
13
Repetitive avalanche energy 0.3mHB
EAR
25
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-LeadC
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-LeadC
Alpha & Omega Semiconductor, Ltd.
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max p-channel
-30
±20
-5.3
-4.5
-30
2
1.44
17
43
-55 to 150
Typ
50
80
32
50
80
32
Max
62.5
100
40
62.5
100
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
www.aosmd.com
AO4620
N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
RDS(ON)
Static Drain-Source On-Resistance
24
VGS=4.5V, ID=5A
29
36
VDS=5V, ID=7.2A
24
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
0.77
660
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=7.2A
µA
nA
V
A
32
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Rg
3
20
Forward Transconductance
Output Capacitance
1.6
26
TJ=125°C
VSD
Reverse Transfer Capacitance
5
100
VGS=10V, ID=7.2A
Crss
V
TJ=55°C
gFS
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
IS
Typ
mΩ
mΩ
S
1
V
2.5
A
792
pF
110
pF
87
pF
0.8
1.5
Ω
11.3
14.125
nC
5.7
nC
2.1
nC
Qgd
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
3.1
ns
15.1
ns
2.7
trr
Body Diode Reverse Recovery Time
IF=7.2A, dI/dt=100A/µs
15.5
Qrr
Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs
7.1
ns
20
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating.
Rev 3:June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
5V
10V
VDS=5V
25
6V
12
4V
ID(A)
20
ID (A)
16
4.5V
15
8
10
125°C
3.5V
4
5
25°C
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
35
4.5
VGS=10V
Normalized On-Resistance
30
RDS(ON) (mΩ)
4
1.6
VGS=4.5V
ID=7.2A
1.4
VGS=10V, VDS=15V, ID=7.4A
25
VGS=4.5V
1.2
ID=5A
1
VGS
=10V V =15V, R =2.0Ω,
VGS
=10V,
RGEN=3Ω
DS
L
20
15
0
5
10
IF=7.4A, dI/dt=100A/µs
15
0.8
0.6
20
IF=7.4A, dI/dt=100A/µs
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
60
ID=7.2A
1.0E+00
50
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
125°C
125°C
1.0E-02
25°C
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
30
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=7.2A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
2
200
0
0
0
2
4
6
8
10
12
Coss
Crss
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
1ms
RDS(ON)
limited
0.1s
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
10ms
10s
DC
ZθJA Normalized Transient
Thermal Resistance
20
15
10
5
1
VDS (Volts)
10
0
0.001
100
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=100°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
30
TJ(Max)=150°C
TA=25°C
25
Power (W)
ID (Amps)
1.0
30
10µs
10.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS
NOT ASSUME ANY LIABILITY ARISING
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4620
P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
RDS(ON)
Static Drain-Source On-Resistance
VDS=-5V, ID=-5.3A
15
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
-0.77
980
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
38
42
48
DYNAMIC PARAMETERS
Ciss
Input Capacitance
-3
µA
nA
V
A
VGS=-4.5V, I D=-4.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
-2
31
TJ=125°C
Forward Transconductance
Coss
-5
±100
VGS=-10V, ID=-5.3A
VSD
Units
V
TJ=55°C
gFS
Max
-1
VDS=-30V, VGS=0V
IDSS
IS
Typ
60
mΩ
mΩ
S
-1
V
-2.5
A
1225
pF
150
pF
115
pF
2.2
3.3
Ω
18.7
24
nC
9.6
nC
3.2
nC
Gate Drain Charge
4.8
nC
Turn-On DelayTime
7.7
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-15V, ID=-5.3A
VGS=-10V, VDS=-15V, RL=2.8Ω,
RGEN=3Ω
6
ns
20
ns
7
trr
Body Diode Reverse Recovery Time
IF=-5.3A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/µs
13
ns
26
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating.
Rev3:June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-4.5V
-10V
25
20
15
-ID(A)
-ID (A)
-4V
-6V
20
VDS=-5V
25
-3.5V
15
10
10
VGS=-3V
5
125°C
5
0
25°C
0
0
1
2
3
4
5
0
0.5
60
Normalized On-Resistance
RDS(ON) (mΩ)
50
40
30
VGS=-10V
20
10
2.5
3
3.5
4
4.5
5
10
15
20
25
1.80
80
VGS=-4.5V
1.60
ID=-4.5A
VGS=-10V
1.40
ID=-5.6A
1.20
1.00
0.80
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
70
1.0E+00
ID=-5.6A
60
1.0E-01
125°C
50
-IS (A)
RDS(ON) (mΩ)
2
2.00
VGS=-4.5V
5
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
0
1
40
30
25°C
20
125°C
1.0E-02
1.0E-03
1.0E-04
10
25°C
1.0E-05
0
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1250
Capacitance (pF)
8
-VGS (Volts)
1500
VDS=-15V
ID=-5.6A
6
4
2
750
500
0
4
8
12
16
Crss
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
0.1
0.0
0.01
10
15
25
1m
10s
10ms
DC
Power (W)
0.1s
1.0
10
20
25
30
30
100µs
RDS(ON)
limited
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
10.0
ID (Amps)
Coss
250
0
ZθJA Normalized Transient
Thermal Resistance
Ciss
1000
TJ(Max)=150°C
TA=25°C
20
15
10
5
TJ(Max)=150°C
TA=25°C
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
100
0
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
1
10
Pulse0.1
Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000