AO3401
30V P-Channel MOSFET
General Description
Product Summary
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-4.0A
RDS(ON) (at VGS=-10V)
< 50mΩ
VDS
RDS(ON) (at VGS =-4.5V)
< 60mΩ
RDS(ON) (at VGS=-2.5V)
< 85mΩ
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 6: Feb. 2011
Steady-State
Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol
t ≤ 10s
V
-27
PD
TA=70°C
±12
-3.2
IDM
TA=25°C
B
Units
V
-4
ID
TA=70°C
C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-10V, VDS=5V
-27
Units
µA
±100
nA
-0.9
-1.3
V
41
50
62
75
VGS=-4.5V, ID=-3.7A
47
60
mΩ
VGS=-2.5V, ID=-2A
60
85
mΩ
17
VGS=-10V, ID=-4.0A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
TJ=125°C
A
mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-4.0A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
-2
A
ISM
Pulsed Body-Diode CurrentB
-27
A
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
4
S
-1
V
645
pF
80
pF
55
pF
7.8
12
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
nC
Qg(4.5V) Total Gate Charge
7
nC
VGS=-10V, VDS=-15V, ID=-4.0A
Qgs
Gate Source Charge
1.5
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-15V,
RL=3.75Ω, RGEN=3Ω
3.5
ns
41
ns
9
ns
trr
Body Diode Reverse Recovery Time
IF=-4.0A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs
3.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Feb. 2011
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Page 2 of 5
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
10V
VDS=-5V
4.5V
20
15
-ID(A)
-ID (A)
15
-2.5V
10
10
125°C
5
25°C
5
VGS=-2.0V
0
0
0
1
2
3
4
0
5
100
1
1.5
2
2.5
3
Normalized On-Resistance
1.8
80
RDS(ON) (mΩ
Ω)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-2.5V
60
VGS=-4.5V
40
VGS=-10V
20
VGS=-10V
ID=-4A
1.6
1.4
VGS=-4.5V
17
ID=-3.7A
1.2
VGS=-2.5V
ID=-2A
1
5
2
10
0.8
0
2
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
150
1.0E+01
ID=-4A
130
1.0E+00
110
1.0E-01
90
-IS (A)
RDS(ON) (mΩ
Ω)
40
125°C
1.0E-02
125°C
1.0E-03
70
50
25°C
1.0E-04
25°C
1.0E-05
30
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6: Feb. 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=-15V
ID=-4A
8
800
Capacitance (pF)
-VGS (Volts)
Ciss
6
4
600
400
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
Coss
Crss
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
100.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
1000
Power (W)
-ID (Amps)
10.0
100
10
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
Zθ JA Normalized Transient
Thermal Resistance
1
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Feb. 2011
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Page 4 of 5
AO3401
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 6: Feb. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5