AO4614A
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4614A uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614A
is Pb-free (meets ROHS & Sony 259
specifications).
n-channel
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON)
< 31mΩ (VGS=10V)
< 45mΩ (VGS=4.5V)
p-channel
-40V
-5A (VGS = -10V)
RDS(ON)
< 45mΩ (VGS = -10V)
< 63mΩ (VGS = -4.5V)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
±20
±20
6
-5
ID
5
-4
IDM
20
-20
2
2
1.28
1.28
-55 to 150
-55 to 150
TA=25°C
Continuous Drain
Current A
TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-40
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
48
74
35
p-ch
p-ch
p-ch
48
74
35
Units
V
V
A
W
°C
Max Units
62.5 °C/W
110 °C/W
50 °C/W
62.5
110
50
°C/W
°C/W
°C/W
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AO4614A
N Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, V GS=0V
1
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, I D=6A
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, I D=5A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Units
V
VDS=32V, VGS=0V
VGS(th)
IS
Max
40
IGSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, I D=6A
µA
±100
nA
2.3
3
V
23.2
31
36
48
32.6
45
A
22
mΩ
mΩ
S
0.77
1
V
2.5
A
404
pF
95
pF
37
pF
2.7
Ω
8.3
nC
4.2
nC
1.3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.3
nC
tD(on)
Turn-On DelayTime
4.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
3.3
ns
15.6
ns
3
ns
20.5
14.5
ns
nC
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge
IF=6A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 1: Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614A
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-10mA, V GS=0V
-40
-1
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
±100
nA
-3
V
32.5
45
52
65
VGS=-4.5V, I D=-2A
51.4
63
VDS=-5V, ID=-4.8A
12
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
µA
-1.9
VGS=-10V, I D=-5A
Coss
Units
V
TJ=55°C
IGSS
IS
Max
VDS=-32V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, I D=-5A
A
mΩ
mΩ
S
-0.75
-1
V
-2.5
A
657
pF
143
pF
63
pF
6.5
Ω
13.6
nC
6.8
nC
1.8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.9
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=-10V, VDS=-20V, RL=4Ω,
RGEN=3Ω
6.7
ns
26
ns
11.2
ns
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
22.3
Body Diode Reverse Recovery Charge
IF=-5A, dI/dt=100A/µs
15.2
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
The
valueapplication
in any given
application
depends
on the user's
design.
The is
current
is t≤
based
on the resistance rating.
T
value
in any
a given
depends
on the
user's specific
board specific
design. board
The current
rating
basedrating
on the
10s thermal
A =25°C.
rating,
pulse width
limited by junction temperature.
tB: ≤Repetitive
10s thermal
resistance
rating.
the sum
of the
thermal
junction to lead RθJL and lead to ambient.
C. Repetitive
The R θJA israting,
B:
pulse
width
limitedimpedence
by junctionfrom
temperature.
the sum of theinthermal
from
lead R
leadduty
to ambient.
C.
D. The R
static
characteristics
Figuresimpedence
1 to 6,12,14
arejunction
obtainedtousing
80
µsand
pulses,
cycle 0.5% max.
θJA is
θJL
D.
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
using
<300with
µs pulses,
duty cycle
max.
E. These
tests
are performedinwith
the device
mounted
1 in2 FR-4
board
2oz. Copper,
in a0.5%
still air
environment with TA=25°C. The SOA
E. These
tests are
performed
with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
curve
provides
a single
pulse rating.
T A=25°C. The SOA curve provides a single pulse rating.
Rev 0 : Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
20
5V
VDS=5V
25
4.5V
15
4V
ID(A)
ID (A)
20
15
125°C
10
10
VGS=3.5V
5
5
0
0
1
2
3
4
25°C
0
5
2
2.5
VDS (Volts)
Figure 1: On-Region Characteristics
4
4.5
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
50
40
VGS=4.5V
30
VGS=10V
20
0
5
10
15
VGS=10V
ID=6A
1.6
VGS=4.5V
ID=5A
1.4
1.2
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
80
ID=6A
70
1.0E+00
60
125°C
1.0E-01
50
IS (A)
RDS(ON) (mΩ)
3
125°C
40
1.0E-02
25°C
1.0E-03
30
1.0E-04
25°C
20
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4614A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
800
VDS=20V
ID= 6A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
Crss
200
0
0
0
2
4
6
8
0
10
100.0
100µs
10ms
1ms
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
30
Power (W)
ID (Amps)
40
TJ(Max)=150°C
TA=25°C
10µs
10.0
0.1s
20
10
DC
0
0.001
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
30
40
RDS(ON)
limited
10
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4614A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
30
-5V
-10V
25
VDS=-5V
-4.5V
-6V
20
-4V
15
-ID(A)
-ID (A)
20
15
-3.5V
10
10
VGS=-3V
5
1
2
3
25°C
5
0
0
125°C
4
0
5
1
1.5
-VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
60
1.8
Normalized On-Resistance
VGS=-4.5V
55
RDS(ON) (mΩ)
2
50
45
40
VGS=-10V
35
VGS=-10V
ID=-5A
1.6
1.4
VGS=-4.5V
ID=-2A
1.2
1
0.8
30
0
0
2
4
6
8
25
10
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
160
140
1.0E+00
ID=-5A
120
125°C
1.0E-01
125°C
100
-IS (A)
RDS(ON) (mΩ)
50
80
60
1.0E-02
1.0E-03
1.0E-04
40
25°C
25°C
1.0E-05
20
2
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4614A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1000
VDS=-20V
ID=-5A
800
Capacitance (pF)
-VGS (Volts)
8
6
4
2
600
400
0
5
10
Crss
0
15
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
100µs
1ms
0.1s
TJ(Max)=150°C
TA=25°C
10µs
30
Power (W)
RDS(ON)
limited
10ms
1s
20
10
10s
DC
0.1
0.1
20
40
TJ(Max)=150°C, TA=25°C
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
-ID (Amps)
Coss
200
0
10.0
Ciss
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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