AOT2618L/AOB2618L/AOTF2618L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2618L & AOB2618L & AOTF2618L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss.
This device
is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
60V
23A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 19mΩ
RDS(ON) (at VGS=4.5V)
< 25mΩ
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT2618L
D
S
AOTF2618L
G
D
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0 : July 2012
7
Steady-State
Steady-State
A
23
A
EAS
26
mJ
41.5
23.5
20.5
11.5
2.1
TJ, TSTG
RθJA
RθJC
-55 to 175
AOT2618L/AOB2618L
15
60
3.6
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W
W
1.3
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
16
5.5
PD
TA=25°C
V
70
IDSM
TA=70°C
Units
V
22
18
IDM
TA=25°C
Continuous Drain
Current
AOTF2618L
G
±20
23
ID
TC=100°C
C
S
AOB2618L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT2618L/AOB2618L
Symbol
Drain-Source Voltage
VDS
60
Continuous Drain
Current G
S
S
°C
AOTF2618L
15
60
6.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT2618L/AOB2618L/AOTF2618L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
nA
1.95
2.5
V
15.8
19
29.3
35.5
19.5
25
mΩ
S
1
V
23
A
A
45
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
V
5
IGSS
gFS
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=60V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=30V, f=1MHz
950
pF
108
pF
7
VGS=0V, VDS=0V, f=1MHz
1
mΩ
2
pF
Ω
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
20
nC
Qg(4.5V) Total Gate Charge
6
10
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
3
nC
1.6
nC
7.5
ns
31
ns
18
ns
tf
Turn-Off Fall Time
40
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
70
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : July 2012
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Page 2 of 7
AOT2618L/AOB2618L/AOTF2618L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS=5V
4V
40
40
4.5V
30
30
ID(A)
ID (A)
3.5V
125°C
20
20
10
10
25°C
Vgs=3.0V
0
0
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
3
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
Normalized On-Resistance
2.6
25
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
20
15
VGS=10V
2.4
2.2
VGS=10V
ID=20A
2
17
5
2
10
1.8
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
10
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
50
1.0E+01
ID=20A
1.0E+00
40
40
125°C
1.0E-01
30
IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-02
20
25°C
1.0E-03
25°C
10
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : July 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT2618L/AOB2618L/AOTF2618L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=30V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
1000
8
6
4
2
800
600
Coss
400
200
Crss
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
60
200
1000.0
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
150
Power (W)
100.0
ID (Amps)
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
100
50
0.0
0
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2618L and AOB2618L (Note F)
0.0001 0.001
0.01
0.1
1
10
0
100
1000
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT2618L and AOB2618L (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2618L and AOB2618L (Note F)
Rev 0 : July 2012
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Page 4 of 7
AOT2618L/AOB2618L/AOTF2618L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
1000.0
100.0
10µs
RDS(ON)
10.0
100µs
Power (W)
ID (Amps)
TJ(Max)=175°C
TC=25°C
250
1ms
10ms
DC
1.0
200
150
100
TJ(Max)=175°C
TC=25°C
0.1
50
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001 0.001
0.01
0.1
1
10
100
1000
17
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
5
for AOTF2618L (Note F)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF2618L
2
10
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6.4°C/W
1
0
18
0.1
PD
Single Pulse
Ton
0.01
1E-05
T
40
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF2618L (Note F)
Rev 0 : July 2012
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Page 5 of 7
AOT2618L/AOB2618L/AOTF2618L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
TA=150°C
10
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=125°C
1
40
30
20
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 16: Power De-rating (Note F)
175
1000
25
TA=25°C
100
Power (W)
Current rating ID(A)
20
15
10
17
5
2
10
10
5
0
1
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 17: Current De-rating (Note F)
175
0100
0.1
1
10
1000
18
Pulse Width (s)
Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H)
0.001
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : July 2012
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Page 6 of 7
AOT2618L/AOB2618L/AOTF2618L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : July 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7