GD650HFT170P1S
IGBT Module
STARPOWER
IGBT
SEMICONDUCTOR
GD650HFT170P1S
Molding Type Module
1700V/650A 2 in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
wind and solar power.
Features







Low VCE(sat) trench IGBT technology
10μs short circuit capability
Low inductance case
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
High power and thermal cycling capability
Typical Applications





Auxiliary Inverters
High Power Converters
UPS
Wind and Solar Power
Traction Drives
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
1/6
Preliminary
GD650HFT170P1S
IGBT Module
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
Tjmax
Tstg
VISO
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25℃
@ TC=100℃
Pulsed Collector Current tp=1ms
Diode Continuous Forward Current
@ TC=100℃
Diode Maximum Forward Current tp=1ms
Maximum Power Dissipation @ Tj=175℃
Maximum Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
Power Terminal Screw:M4
Power Terminal Screw:M8
Mounting Screw:M5
GD650HFT170P1S
1700
±20
950
650
1300
Units
V
V
650
A
1300
3817
175
-40 to +125
4000
1.8 to 2.1
8.0 to 10
3.0 to 5.0
A
W
℃
℃
V
A
A
N.m
N.m
Electrical Characteristics of IGBT TC=25℃ unless otherwise noted
Off Characteristics
Symbol
V(BR)CES
ICES
IGES
Parameter
Collector-Emitter
Breakdown Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Test Conditions
Min.
Typ.
Max.
1700
Tj=25℃
Units
V
VCE=VCES,VGE=0V,
Tj=25℃
VGE=VGES,VCE=0V,
Tj=25℃
5.0
mA
400
nA
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Gate-Emitter Threshold
Vol tage
Collector to Emitter
Saturation Voltage
Test Conditions
IC=24.0mA,VCE=VGE,
Tj=25℃
IC=650A,VGE=15V,
Tj=25℃
IC=650A,VGE=15V,
Tj=125℃
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
Min.
Typ.
Max.
Units
5.2
5.8
6.4
V
1.90
2.35
V
2.30
2/6
Preliminary
GD650HFT170P1S
IGBT Module
Switching Characteristics
Symbol
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Parameter
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
ISC
SC Data
RGint
LCE
Internal Gate Resistance
Stray Inductance
Module Lead
Resistance,
Terminal To Chip
RCC’+EE’
Test Conditions
Min.
VCC=900V,IC=650A,
RGon=1.0Ω,
RGoff=2.7Ω,
VGE=±15 V,
Tj=25℃
VCC=900V,IC=650A,
RGon=1.0Ω,
RGoff=2.7Ω,
VGE=±15 V,
Tj=125℃
VCE=25V,f=1MHz,
VGE=0V
tP≤10μs,VGE=15 V,
Tj=125℃,VCC=1000 V,
VCEM≤1700V
Typ.
303
87
867
130
Max.
Units
ns
ns
ns
ns
140
mJ
170
mJ
325
108
1083
217
ns
ns
ns
ns
210
mJ
250
mJ
52.9
2.20
nF
nF
1.75
nF
2400
A
1.7
18
Ω
nH
0.30
mΩ
Electrical Characteristics of Diode TC=25℃ unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Parameter
Diode Forward
Vol tage
Recovered
Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
Tj=25℃
IF=650A
Tj=125℃
Tj=25℃
Tj=125℃
IF=650A,
Tj=25℃
VR=900V,
RGon=1.0Ω,
Tj=125℃
VGE=-15V
Tj=25℃
Tj=125℃
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
Min.
Typ.
1.80
1.90
150
250
680
750
74.5
155
3/6
Max.
2.25
Units
V
μC
A
mJ
Preliminary
GD650HFT170P1S
IGBT Module
Electrical Characteristics of NTC TC=25℃ unless otherwise noted
Symbol
R25
∆R/R
P25
B25/50
Parameter
Rated Resistance
Deviation of R100
Power
Dissipation
Test Conditions
TC=100℃,R100=493Ω
B-value
R2=R25exp[B25/50(1/T21/(298.15K))]
Min.
Typ.
5.0
Max.
-5
3375
5
Units
kΩ
%
20.0
mW
K
Thermal Characteristics
Symbol
RθJC
RθJC
RθCS
Weight
Parameter
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Case-to-Sink (Conductive grease applied)
Weight of Module
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
Typ.
Max.
39.3
74.8
4.5
825
4/6
Units
K/kW
K/kW
K/kW
g
Preliminary
GD650HFT170P1S
IGBT Module
Equivalent Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
5/6
Preliminary
GD650HFT170P1S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2011 STARPOWER Semiconductor Ltd.
9/13/2011
6/6
Preliminary