Absolute Maximum Ratings
Values
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
Units
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
1200
1200
570 / 400
1140 / 800
± 20
2500
–40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
390 / 260
1140 / 800
2900
42 000
A
A
A
A2s
SEMITRANS® M
Low Loss IGBT Modules
SKM 400 GB 124 D
SKM 400 GAL 124D 6)
SKM 400 GAR 124D 6)
Inverse Diode; Free-wheeling Diode FWD
IF = –IC
IFM = –ICM
IFSM
I 2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
SEMITRANS 3
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
CCHC
Cies
Coes
Cres
LCE
td(on)
tr
td(off)
tf
Eon
Eoff
VGE = 0, IC = 4 mA
VGE = VCE, IC = 12 mA
Tj = 25 °C
VGE = 0
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 300 A VGE = 15 V;
IC = 400 A Tj = 25 (125) °C
VCE = 20 V, IC = 300 A
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
VCC = 600 V
VGE = –15 V / +15 V3)
IC = 300 A, ind. load
RGon = RGoff = 5 Ω
Tj = 125 °C
6)
min.
typ.
max.
Units
4,5
–
–
–
–
–
110
–
5,5
8
24
–
2,1(2,4)
2,5(3,0)
–
–
6,5
14
–
0,35
2,45(2,85)
–
–
V
V
mA
mA
µA
V
V
S
–
–
–
–
–
–
22
3,3
1,2
–
700
30
4
1,6
20
pF
nF
nF
nF
nH
–
–
–
–
–
–
85
65
680
56
36
42
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
–
–
–
–
–
–
2,0(1,8)
2,25(2,05)
1,1
–
136
36
2,5
–
1,2
3,5
–
–
V
V
V
mΩ
A
µC
–
–
–
–
–
–
0,05
0,125
0,038
°C/W
°C/W
°C/W
≥ VCES
Inverse Diode and FWD of types “GAL”, GAR” 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 300 A VGE = 0 V;
IF = 400 A Tj = 25 (125) °C
Tj = 125 °C 2)
Tj = 125 °C 2)
IF = 300 A; Tj = 125 °C2)
IF = 300 A; Tj = 125 °C2)
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
6)
GB
GAL
GAR
Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon
structure (NPT-Non punch
through-IGBT)
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications → B 6 – 205
• Switching (not for linear use)
• Inverter drives
• UPS
1)
2)
3)
6)
8)
Tcase = 25 °C, unless otherwise
specified
IF = – IC, VR = 600 V,
–diF/dt = 2000 A/µs, VGE = 0 V
Use VGEoff = –5... –15 V
The free-wheeling diodes of the
GAL and GAR types have the
data of the inverse diodes of
SKM 400 GB 124 D
CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
→ B 6 – 206
© by SEMIKRON
0898
B 6 – 201
SKM 400 GB 124 D...
M400G124.X LS-1
3000
M400G124.X LS -2
120
Tj = 125 °C
VCE = 600 V
VGE = + 15 V
RG = 5 Ω
mWs
W
2500
100
E on
2000
80
E off
1500
60
1000
40
500
20
E
P tot
0
0
0
20
40
60
80
100
120
TC
140 160
°C
0
200
400
Fig. 1 Rated power dissipation Ptot = f (TC)
800
A
Fig. 2 Turn-on /-off energy = f (IC)
M400G124.X LS -4
M400G124.X LS-3
200
Tj = 125 °C
VCE = 600 V
VGE = + 15 V
IC = 300 A
mWs
E on
160
600
IC
10000
A
tp=16µs
1000
1 pulse
TC = 25 °C
Tj ≤ 150 °C
100µs
120
100
1ms
E off
80
10
10ms
Not for
linear use
(DC)
40
1
IC
E
0
0,1
0
RG
10
20
30
Ω
40
1
Fig. 3 Turn-on /-off energy = f (RG)
100
1000
10000
V
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
M400G124.X LS -5
2,5
10
V CE
2
Tj ≤ 150 °C
12
VGE = 15 V
RGoff = 5 Ω
IC = 300 A
10
M400G124.X LS -6
di/dt=1000 A/µs
3000 A/µs
5000 A/µs
8
1,5
Tj ≤ 150 °C
VGE = ± 15 V
tsc ≤ 10 µs
L < 25 nH
ICN = 300 A
6
4
allowed numbers of
short circuits: <1000
2
time between short
circuits: >1s
1
0,5
ICpuls/IC
ICSC/IC
0
0
0
200
V CE
400
600
800
Fig. 5 Turn-off safe operating area (RBSOA)
B 6 – 202
0
1000 1200 1400
V
200
V CE
400
600
800
1000 1200
1400
V
Fig. 6 Safe operating area at short circuit IC = f (VCE)
0898
© by SEMIKRON
M400G124.X LS -8
600
Tj = 150 °C
VGE ≥ 15V
A
500
400
300
200
100
IC
0
0
20
40
60
80
100
120
140
TC
160
°C
Fig. 8 Rated current vs. temperature I C = f (TC)
M400G124.X LS -9
600
M400G124.X LS-10
600
A
A
17V
15V
13V
11V
9V
7V
500
400
500
17V
15V
13V
11V
9V
7V
400
300
300
200
200
100
100
IC
IC
0
0
0
1
2
3
4
0
5
Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C
1
2
3
4
V CE
V
V CE
5
V
Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
M400G124.X LS-12
600
Pcond(t) = VCEsat(t) · IC(t)
A
500
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
400
VCE(TO)(Tj) ≤ 1,3 + 0,0005 (Tj –25) [V]
300
typ.: rCE(Tj) = 0,0027 + 0,000008 (Tj –25) [Ω]
200
max.: rCE(Tj) = 0,0038 + 0,000012 (Tj –25) [Ω]
+2
valid for VGE = + 15 –1
100
IC
[V]; IC > 0,3 ICnom
0
0
2
V GE
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
© by SEMIKRON
4
6
8
10
12
V
14
Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
0898
B 6 – 203
SKM 400 GB 124 D...
M400G124.X LS-13
20
V
M400G124.X LS -14
100
ICpuls = 300 A
18
VGE = 0 V
f = 1 MHz
nF
Cies
16
600V
14
10
800V
12
Coes
10
8
1
6
Cres
4
C
V GE
2
0
0,1
0
QGate
500
1000
1500
2000
nC
0
10
20
V CE
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.VCE
M400G124.X LS-15
1000
ns
M400G124.X LS -16
10000
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
RGon = 5 Ω
RGoff = 5 Ω
induct. load
tdoff
100
30
V
ns
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
IC = 300 A
induct. load
tdoff
1000
tr
tdon
t don
tr
tf
tf
100
t
t
10
10
0
200
400
600
800
0
A
IC
20
30
M400G124.X LS -17
M400G124.X LS-18
25
mJ
A
3Ω
15
5Ω
200
7Ω
10
Tj=125°C, typ.
15 Ω
Tj=25°C, typ.
5
Tj=125°C, max.
Tj=25°C, max.
IF
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
RG=
20
300
100
40
Ω
Fig. 16 Typ. switching times vs. gate resistor RG
Fig. 15 Typ. switching times vs. IC
400
10
RG
30 Ω
E offD
0
0
0
1
VF
2
3
100
IF
V
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 204
0
4
200
300
400
500
A
Fig. 18 Diode turn-off energy dissipation per pulse
0898
© by SEMIKRON
M400G124.XLS-19
0,1
M 400G124.XLS-20
1
K/W
K/W
0,1
0,01
D=0,50
0,20
0,10
0,05
0,02
0,01
0,001
D=0,5
0,2
0,1
0,05
0,02
0,01
0,01
0,001
0,0001
single pulse
single pulse
ZthJC
ZthJC
0,00001
0,00001 0,0001
tp
0,001
0,01
0,1
s
0,0001
0,00001
1
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
400
0,01
0,1
1
s
M 400G124.XLS-23
500
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
RG=
3Ω
A
0,001
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M 400G124.XLS-22
500
0,0001
tp
A
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
IF = 300 A
RG= 3 Ω
400
5Ω
5Ω
300
300
7Ω
7Ω
200
200
15 Ω
30 Ω
15 Ω
100
100
30 Ω
IRR
IRR
0
0
0
100
200
300
400
IF
500
0
A
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
2000
diF/dt
4000
6000
8000
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
M 400G124.XLS-24
70
Typical Applications
10000
A/µs
µC
RG= 3 Ω
60
include
IF=
400 A
5Ω
50
Switched mode power supplies
DC servo and robot drives
15 Ω
7Ω
300 A
30 Ω
40
220 A
Inverters
DC choppers
30
150 A
AC motor speed control
75 A
20
UPS Uninterruptable power supplies
General power switching applications
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
10
Qrr
Electronic (also portable) welders
0
0
2000
diF/dt
4000
6000
8000
10000 12000
A/µs
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
0898
B 6 – 205
SKM 400 GB 124 D...
SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532
SKM 400 GB 124 D
Dimensions in mm
SKM 400 GAL 124 D
SKM 400 GAR 124 D
Case D 57 ( → D 56)
Case D 58 ( → D 56)
Case outline and circuit diagrams
Mechanical Data
Symbol Conditions
M1
M2
to heatsink, SI Units
to heatsink, US Units
for terminals, SI Units
for terminals, US Units
Values
(M6)
(M6)
a
w
6)
min.
typ.
max.
3
27
2,5
22
–
-
–
–
–
–
-
5
44
5
44
5x9,81
325
Freewheeling diode → B 6 – 201, remark 6.
B 6 – 206
Units
0898
Nm
lb.in.
Nm
lb.in.
m/s2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Three devices are supplied in one
SEMIBOX A without mounting
hardware, which can be ordered
separately under Ident No.
33321100 (for 10 SEMITRANS 3).
Larger packing units of 12 and 20
pieces are used if suitable
Accessories → B 6 – 4.
SEMIBOX → C – 1.
© by SEMIKRON