IXSH24N60(A)U1

HiPerFASTTM IGBT with Diode
VCES
IXSH 24N60U1
IXSH 24N60AU1
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V CES
V CGR
T J = 25°C to 150°C600
T J = 25°C to 150°C; R GE = 1 MW
V
600
V
V GES
V GEM
Continuous
Transient
±20
±30
V
V
I C25
I C90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
48
24
96
A
A
A
SSOA
(RBSOA)
V GE= 15 V, T VJ = 125°C, R G = 10 W
Clamped inductive load, L = 100 mH
I CM = 48
@ 0.8 V CES
A
t SC
(SCSOA)
V GE= 15 V, V CE = 360 V, T J = 125°C,
R G = 82 W, non-repetitive
10
ms
PC
TC = 25°C
150
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
T stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque, TO-247
Weight
VCE(sat)
48 A 2.2 V
48 A 2.7 V
TO-247 AD
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
300
°C
260
°C
1.13/10 Nm/lb.in.
TO-247 AD
600 V
600 V
IC25
6
• International standard package
JEDEC TO-247 AD
• High frequency IGBT and anti-parallel
FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
g
Applications
Symbol
Test Conditions
BV CES
V GE(th)
IC
IC
ICES
V CE = 0.8 • V CES
V GE = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 750 mA, V GE = 0 V
= 1.5 mA, V CE = V GE
IGES
V CE = 0 V, V GE = ±20 V
V CE(sat)
IC
= I C90, V GE = 15 V
600
3.5
T J = 25°C
T J = 125°C
IXSH 24N60U1
IXSH 24N60AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
6.5
V
V
500
8
mA
mA
±100
nA
2.2
2.7
V
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Suitable for surface mounting
• Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
• Reduces assembly time and cost
92820I (7/00)
1-2
IXSH 24N60U1
IXSH 24N60AU1
Symbol
Test Conditions
g fs
IC = I C90 ; V CE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
I C(on)
V GE = 15 V, V CE = 10 V
C ies
C oes
C res
V CE = 25 V, V GE = 0 V, f = 1 MHz
Qg
Q ge
Q gc
I C = I C90, V GE = 15 V, V CE = 0.5 V CES
t d(on)
t ri
t d(off)
t fi
E off
t d(on)
t ri
Eon
t d(off)
t fi
E off
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Reverse Diode (FRED)
Test Conditions
S
65
A
1800
200
45
pF
pF
pF
75
20
35
24N60U1
24N60AU1
24N60U1
24N60AU1
100
200
1.8
475
600
450
4
3
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.25
0.83 K/W
K/W
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IF = IC90, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms
10
VR = 360 V
TJ = 125°C 150
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
35
© 2000 IXYS All rights reserved
nC
nC
nC
24N60U1
24N60AU1
24N60AU1
VF
RthJC
90
30
50
ns
ns
ns
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
13
100
200
450
500
275
2
R thJC
R thCK
Symbol
9
TO-247 AD (IXSH) Outline
1.6
V
15
A
ns
ns
50
1 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2