SUSPM™
LUH50G1202
LUH50G1202Z*(1)
1200V 50A 2-Pack IGBT Module
Preliminary data
Features
•
•
•
Non Punch Through (NPT) technology
- Ultra-fast
- 10μs short circuit current
- Positive VCE(on) temperature coefficient
- Square RBSOA
Free wheeling diodes with fast and soft reverse recovery
Industrial standard package with copper base plate
•
Included ESD protection function *(1)
Applications
•
•
•
Welder / Power Supply
UPS / Inverter
Industrial Motor Driver
SUSPM1
94.5 x 34.5 x 31.1 mm
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Item
Symbol
Value
Units
VCES
1200
V
VGES
± 20
V
-
A
IC
IGBT
Conditions
@Tj = 150 °C, TC = 25 °C, Continuous
@Tj = 150°C, TC = 80°C, Continuous
50
A
ICM
@TC = 80 °C, tP = 1 ms
100
A
TSC
Chip Level, @Tj = 150 °C, VGE = 15 V, VCES < 1200 V
Tj
PD
10
μs
-40~125
°C
@Tj = 150 °C, TC = 25 °C
350
W
@Tj = 150 °C, TC = 80 °C
200
W
1200
V
Operating Junction Temperature *(2)
VRRM
Diode
IF
IFRM
50
A
100
A
Operating Junction Temperature *(2)
-40~125
°C
Tstg
Storage Temperature
-40~125
°C
Viso
Tj
Module
tP = 1 ms
@ AC 1minute
2500
V
Mt
Main Terminal Mounting torque (M5)
2.5~5
Nm
MS
Heat sink Mounting torque (M6)
3.0~5
Nm
W
Weight
180
g
Internal Circuit & Pin Description
Pin Number
Pin Name
1
C2E1
Pin Description
Output
2
E2
Negative DC Link Output
3
C1
Positive DC Link Output
4
G1
Gate Input for High-side
5
E1
Emitter Input for High-side
6
G2
Gate Input for Low-side
7
E2
Emitter Input for Low-side
(Note *1) Option : Included ± 28 V Zener Diode between Gate and Emitter.
(Note *2) The Maximum junction temperature of chip is 150 °C.
©2011 LSIS, Preliminary Rev 0.1_12.02.2011
1 of 6
LUH50G1202Z*(1)
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
BVCES
C-E Breakdown Voltage
VGE = 0 V, IC = 1 mA
1200
-
-
Units
V
ICES
C-E Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
-
nA
VGE(th)
G-E Threshold Voltage
VGE = VCE, IC = 50 mA
-
5.9
-
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 50 A, VGE = 15 V, TC = 25 °C
-
3.4
-
V
IC = 50 A, VGE = 15 V, TC = 125 °C
-
3.8
-
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Cies
Input Capacitance
-
5.60
-
nF
Coes
Output Capacitance
-
0.35
-
nF
Cres
Reverse Transfer Capacitance
-
0.50
-
nF
td(on)
Turn-On Delay Time
-
60
-
ns
tr
Rise Time
-
40
-
ns
td(off)
Turn-Off Delay Time
-
548
-
ns
Dynamic Characteristics
VCE = 25 V, VGE = 0 V
f = 1MHz, TC = 25 °C
TC = 125 °C, RG = 15 Ω
L = 200 μH, VDC = 600 V
VGE = 15 V ~ -15 V
IC = 50 A
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
1.6
-
mJ
Ets
Total Switching Loss
-
7.2
-
mJ
-
410
-
nC
-
45
-
nC
-
206
-
nC
Units
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VGE = 0 V ~ +15 V
-
32
-
ns
-
5.6
-
mJ
Electrical Characteristics of Diode TC = 25°C unless otherwise noted
Symbol
Parameter
VF
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IRRM
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
Err
Diode Reverse Recovery Energy
Test Conditions
IF = 50 A
VGE = 0 V
RG = 15 Ω
L = 200 μH
VDC = 600 V
VGE = 15 V ~ -15 V
IC = 50 A
Min
Typ
Max
TC = 25 °C
-
1.8
-
TC = 125 °C
-
1.7
-
TC = 25 °C
-
236
-
TC = 125 °C
-
610
-
TC = 25 °C
-
55
-
TC = 125 °C
-
66
-
TC = 25 °C
-
4.5
-
TC = 125 °C
-
11.0
-
TC = 25 °C
-
1.1
-
TC = 125 °C
-
4.0
-
V
ns
A
μC
mJ
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Rth(J-C)
Thermal Resistance (IGBT Part)
Junction-to-Case
-
0.32
-
Units
°C/W
Rth(J-C)D
Thermal Resistance (Diode Part)
Junction-to-Case
-
-
-
°C/W
* This specifications may not be considered as an assurance of characteristics and may not have same characteristics
in case of using different test systems from @LSIS. We therefore strongly recommend prior consultation of our engineers.
2 of 6
©2011 LSIS, Preliminary Rev 0.1_12.02.2011
LUH50G1202Z*(1)
Fig 1. Typical IGBT Output Characteristics
Fig 2. Typical IGBT Output Characteristics
Fig 3. Typical IGBT Output Characteristics
Fig 4. Typical Diode Forward Characteristics
Fig 5. Typical Switching Time vs. Collector Current
Fig 6. Typical Switching Time vs. Collector Current
©2011 LSIS, Preliminary Rev 0.1_12.02.2011
3 of 6
LUH50G1202Z*(1)
Fig 7. Typical Switching Time vs. Gate Resistor
Fig 8. Typical Switching Time vs. Gate Resistor
Fig 9. Typical IGBT Switching Loss
Fig 10. Typical IGBT Switching Loss
Fig 11. Typical Recovery Characteristics of Diode
Fig 12. Typical Recovery Characteristics of Diode
4 of 6
©2011 LSIS, Preliminary Rev 0.1_12.02.2011
LUH50G1202Z*(1)
Fig 13. Typical Diode Switching Loss
Fig 14. Typical Diode Switching Loss
Fig 15. Typical Gate Charge Characteristics
Fig 16. Case Temperature vs. Collector Current
Fig 17. Typical Transient Thermal Impedance
©2011 LSIS, Preliminary Rev 0.1_12.02.2011
5 of 6
LUH50G1202Z*(1)
Package Dimension(Dimension in mm)
6 of 6
©2011 LSIS, Preliminary Rev 0.1_12.02.2011