IGBT MODULE
Spec.No.IGBT-SP-04010R6
MBM600E17D
Silicon N-channel IGBT
FEATURES
 High speed, low loss IGBT module.
 Low driving power due to low input capacitance MOS gate.
 Low noise due to ultra soft fast recovery diode.
 High reliability, high durability module.
 High thermal fatigue durability.
(delta Tc=70C, N30,000cycles)
 Isolated heat sink (terminal to base).
o
ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item
Symbol
Collector Emitter Voltage
Gate Emitter Voltage
VCES
VGES
DC
IC
Collector Current
1ms
ICp
DC
IF
Forward Current
1ms
IFM
Junction Temperature
Tj
Storage Temperature
Tstg
Isolation Voltage
VISO
Terminals (M4/M8)
Screw Torque
Mounting (M6)
+0
Notes: (1) Recommended Value 1.80.2 / 15 -3 N·m
Unit
MBM600E17D
V
V
1,700
20
600
A
1,200
600
A
1,200
o
C
-40 ~ +125
o
C
-40 ~ +125
VRMS
4,000(AC 1 minute)
2/15
(1)
N·m
6
(2)
(2) Recommended Value 5.50.5N·m
ELECTRIC CHARACTERISTICS
Item
Symbol
Unit
Min.
Typ. Max.
Test Conditions
o
5.0 VCE=1,700V, VGE=0V, Tj=25 C
Collector Emitter Cut-Off Current
I CES
mA
o
5
17 VCE=1,700V, VGE=0V, Tj=125 C
o
Gate Emitter Leakage Current
IGES
nA
-500
+500 VGE=20V, VCE=0V, Tj=25 C
o
Collector Emitter Saturation Voltage
VCE(sat)
V
2.1
2.6
3.1 IC=600A, VGE=15V, Tj=125 C
o
Gate Emitter Threshold Voltage
VGE(TO)
V
5.0
6.5
8.0 VCE=10V, IC=60mA, Tj=25 C
Input Capacitance
Cies
nF
50
o
VCE=10V, VGE=0V, f=100kHz, Tj=25 C
Internal Gate Resistance
Rg(int)

2.7
Rise Time
tr
0.25
0.5
1.0 VCC=900V, Ic=600A
Turn On Time
ton
0.4
0.8
1.6 L=100nH,CGE=68nF (3)
Switching Times
s
(3)
Fall Time
tf
0.25
0.5
1.0 RG=1.5
o
Turn Off Time
toff
0.75
1.5
3.0 VGE=15V, Tj=125 C
o
Peak Forward Voltage Drop
VFM
V
1.4
1.9
2.3 IF=600A, VGE=0V, Tj=125 C
Reverse Recovery Time
trr
s
0.1
0.5
1.0 VCC=900V, Ic=IF=600A,
Turn On Loss
Eon(10%)
J/P
0.13 0.2 L=100nH,CGE=68nF (3)
(3)
Turn Off Loss
Eoff(10%)
J/P
0.2
0.3 RG=1.5
o
Reverse Recovery Loss
Err(10%)
J/P
0.2
0.3 VGE=15V, Tj=125 C
Notes:(3) RG and CGE value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG and CGE value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
P1
IGBT MODULE
Spec.No.IGBT-SP-04010R6
MBM600E17D
THERMAL CHARACTERISTICS
Item
Symbol
IGBT
Thermal Impedance
FWD
Contact Thermal Impedance
Rth(j-c)
Rth(j-c)
Rth(c-f)
Unit
K/W
K/W
Min.
-
Typ.
Max.
Test Conditions
0.038 Junction to case
0.060
0.008
Case to fin
MODULE MECHANICAL CHARACTERISTICS
Item
Weight
Stray inductance in module
Comparative Tracking Index
Module base plate Material
Baseplate Thickness
Insulation plate Material
Terminal Surface treatment
Case Material
Fire and Smoke Category
Unit
LS(CM-EM)
(CTI)
g
nH
mm
Characteristics
Conditions
900
21/arm
Collector-main to Emitter-main
600
Al-SiC
5
Al N
Ni plating
Poly-Phenilene Sulfide
I2 / F3
NFF 16-102
P2
IGBT MODULE
Spec.No.IGBT-SP-04010R6
MBM600E17D
DEFINITION OF TEST CIRCUIT
Ls
LLOAD
Vcc
Rg
G/D
Cge
Fig.1 Switching test circuit
Ic
Vce
Ls=
VL
t
0
VL
dIc
dｔ t=tL
( )
tL
Fig.2 Definition of stray inductance
Ic
Ic
Vce
90%
Vce
Vce
0.1Vce
90%
Irm
0
0
Vge
10%
t1
10%
10%
10%
t
t
tr
ton
t3 t4
t2
0
0
10%
∫ Ic･Vce dt
90%
t5
t7
t1
t8
trr
IF
-Ic
t6
t9
t8
Eoff(10%)=
∫ Ic･Vce dt
∫ Ic･Vce dt
t5
Fig.3 Definition of switching loss
t12 t10
∫ IF･Vce dt
t11
t10
t6
Eoff(Full)=
t11
t12
Err(10%)=
t7
t2
∫ Ic･Vce dt
t
tf
toff
t3
Eon(Full)=
t
t
Vge
t4
Eon(10%)=
0.5Irm
0.1IF
0
Err(Full)=
∫ IF･Vce dt
t9
P3
IGBT MODULE
MBM600E17D
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
Spec.No.IGBT-SP-04010R6
P4
IGBT MODULE
MBM600E17D
DYNAMIC CHARACTERISTICS
DEPENDENCE OF CURRENT
Spec.No.IGBT-SP-04010R6
P5
IGBT MODULE
MBM600E17D
DEPENDENCE OF RG
Spec.No.IGBT-SP-04010R6
P6
IGBT MODULE
Spec.No.IGBT-SP-04010R6
MBM600E17D
PACKAGE OUTLINE DRAWING
Unit in mm
E1
C2
C2
E1
G1
G2
E2
C1
C1
E2
Circuit diagram
P7
IGBT MODULE
Spec.No.IGBT-SP-04010R6
MBM600E17D
TRANSIENT THERMAL IMPEDANCE
Maximum
Transient thermal impedance : Zth(j-c) (K/W)
0.1
FWD
IGBT
0.01
0.001
0.0001
0.001
0.01
0.1
1
Time : t(s)
Transient Thermal Impedance Curve
Material declaration
Please note the following materials are contained in the product,
in order to keep characteristic and reliability level.
Material
Contained part
Lead (Pb) and its compounds
Solder
10
P8
IGBT MODULE
MBM600E17D
QG-VG curve
Cies, Coes, Cres
Spec.No.IGBT-SP-04010R6
P9
IGBT MODULE
Spec.No.IGBT-SP-04010R6
P10
MBM600E17D
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
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any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
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secondary damage resulting from use at a value exceeding the absolute maximum rating.
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party or Hitachi Power Semiconductor Device, Ltd.
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without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
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
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