GD300HTL120C7S
IGBT Module
STARPOWER
IGBT
SEMICONDUCTORTM
GD300HTL120C7S
Preliminary
Molding Type Module
1200V/300A 6 in one-package
General Description
STARPOWER IGBT power module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features








Low VCE(sat) SPT+ IGBT technology
Low switching losses
10μs short circuit capability
Square RBSOA
VCE(sat) with positive temperature coefficient
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications



Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
©2010 STARPOWER Semiconductor Ltd.
11/26/2010
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Preliminary
GD300HTL120C7S
IGBT Module
IGBT-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
GD300HTL120C7S
Units
VCES
Collector-Emitter Voltage @ Tj=25℃
1200
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current @ TC=25℃
@ TC=100℃
560
300
A
ICM
Pulsed Collector Current tp=1ms
600
A
Ptot
Total Power Dissipation
2206
W
@ Tj=175℃
Off Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V(BR)CES
Collector-Emitter
Breakdown Voltage
Tj=25℃
ICES
Collector Cut-Off Current
VCE=VCES,VGE=0V,
Tj=25℃
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25℃
400
nA
1200
V
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Test Conditions
Gate-Emitter Threshold
Voltage
Min.
Typ.
Max.
Units
5.0
6.2
7.0
V
IC=300A,VGE=15V,
Tj=25℃
1.90
2.35
IC=300A,VGE=15V,
Tj=125℃
2.10
IC=12mA,VCE=VGE,
Tj=25℃
Collector to Emitter
Saturation Voltage
V
Switching Characteristics
Symbol
Parameter
QG
Gate charge
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
Test Conditions
Min.
VGE=-15…+15V
VCC=600V,IC=300A,
RG=3.3Ω,VGE=±15V,
Tj=25℃
VCC=600V,IC=300A,
RG=3.3Ω,VGE=±15V,
Tj=125℃
©2010 STARPOWER Semiconductor Ltd.
11/26/2010
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Typ.
Max.
Units
3.2
μC
32
mJ
19
mJ
51
mJ
43
mJ
32
mJ
75
mJ
Preliminary
GD300HTL120C7S
IGBT Module
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
VCC=600V,IC=300A,
RG=3.3Ω,VGE=±15V,
Tj=25℃
VCC=600V,IC=300A,
RG=3.3Ω,VGE=±15V,
Tj=125℃
VCE=25V,f=1Mhz,
VGE=0V
tSC≤10μs,VGE≤15 V,
Tj=125℃,VCC=600V,
VCEM≤1200V
ISC
SC Data
RGint
Internal Gate Resistance
135
ns
65
ns
425
ns
55
ns
150
ns
65
ns
485
ns
75
ns
22.3
nF
1.56
nF
1.02
nF
1500
A
0.7
Ω
DIODE-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
GD300HTL120C7S
Units
VRRM
Collector-Emitter Voltage @ Tj=25℃
1200
V
IF
DC Forward Current @ TC=80℃
300
A
IFRM
Repetitive Peak Forward Current tp=1ms
600
A
Characteristics Values
Symbol
Parameter
VF
Diode Forward
Vol tage
Qr
Recovered Charge
IRM
Peak Reverse
Recovery Current
Erec
Reverse Recovery
Energy
Test Conditions
IF=300A,VGE=0V
VR=600 V,
IF=300A,
RG=3.3Ω,
VGE=-15V
©2010 STARPOWER Semiconductor Ltd.
Typ.
Max.
Tj=25℃
1.80
2.20
Tj=125℃
1.85
Tj=25℃
39
Tj=125℃
75
Tj=25℃
249
Tj=125℃
330
Tj=25℃
14
Tj=125℃
30
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Min.
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Units
V
μC
A
mJ
Preliminary
GD300HTL120C7S
IGBT Module
Electrical Characteristics of NTC TC=25℃ unless otherwise noted
Symbol
Parameter
R25
Rated Resistance
∆R/R
Deviation of R100
P25
Power Dissipation
B25/50
B-value
Test Conditions
Min.
Typ.
Max.
5.0
TC=100℃,R100=493.3Ω
-5
R2=R25exp[B25/50(1/T2-1/(298.1
5K))]
Units
kΩ
5
%
20.0
mW
3375
K
IGBT Module
Symbol
Parameter
Min.
VISO
Isolation Voltage RMS,f=50Hz,t=1min
LCE
Typ.
Max.
Units
2500
V
Stray Inductance
20
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
@ TC=25℃
1.1
mΩ
RθJC
Junction-to-Case (per IGBT)
Junction-to-Case (per DIODE)
RθCS
Case-to-Sink (Conductive grease applied)
Tjmax
Maximum Junction Temperature
TSTG
Storage Temperature Range
Mounting
Torque
Weight
Weight of Module
0.068
0.116
0.005
K/W
K/W
175
℃
-40
125
℃
Power Terminal Screw:M5
3.0
6.0
N.m
Mounting Screw:M6
3.0
6.0
N.m
©2010 STARPOWER Semiconductor Ltd.
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g
Preliminary
GD300HTL120C7S
IGBT Module
Equivalent Circuit Schematic
Package Dimension
Dimensions in Millimeters
©2010 STARPOWER Semiconductor Ltd.
11/26/2010
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Preliminary
GD300HTL120C7S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained staff.
you and your technical departments will have to evaluate the suitability of the product for the
intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or
which concerns the specific application of our product, please contact the sales office, which is
responsible for you (see www.powersemi.cc), For those that are specifically interested we may
provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on
the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life
support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2010 STARPOWER Semiconductor Ltd.
11/26/2010
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Preliminary