PD-95184
IRG4PC40UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.72V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
40
20
160
160
±20
15
160
65
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
---------------------
-----0.24
-----6 (0.21)
0.77
-----40
------
Units
°C/W
g (oz)
1
IRG4PC40UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min.
600
18
------------Gate Threshold Voltage
3.0
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance U
11
gfe
---ICES
Zero Gate Voltage Collector Current
------IGES
Gate-to-Emitter Leakage Current
---V(BR)CES
V(BR)ECS
Typ.
------0.63
1.72
2.15
1.7
----13
18
-------------
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---V
VGE = 0V, IC = 1.0A
See Fig. 2, 5
---- V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 20A
VGE = 15V
---V
IC = 40A
---IC = 20A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
---- mV/°C VCE = VGE, IC = 250µA
---S
VCE = 100V, IC = 20A
250
VGE = 0V, VCE = 600V
2.0
µA
VGE = 0V, VCE = 10V, TJ = 25°C
2500
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----------------------------------------------------------
Typ.
100
16
40
34
19
110
120
0.32
0.35
0.67
30
19
220
160
1.4
13
2100
140
34
Max. Units
Conditions
150
IC = 20A
25
nC
VCC = 400V
See Fig. 8
60
VGE = 15V
---TJ = 25°C
---ns
IC = 20A, VCC = 480V
175
VGE = 15V, RG = 10Ω
180
Energy losses include "tail"
------mJ See Fig. 10, 11, 13, 14
1.0
---TJ = 150°C,
---ns
IC = 20A, VCC = 480V
---VGE = 15V, RG = 10Ω
---Energy losses include "tail"
---mJ See Fig. 13, 14
---nH
Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
---ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
IRG4PC40UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLE D ON WW 35, 2000
IN T HE AS S EMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
8
INT ERNAT IONAL
RECT IFIE R
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H