GD100PIY120C6SN
IGBT Module
STARPOWER
IGBT
SEMICONDUCTOR
GD100PIY120C6SN
Molding Type Module
1200V/100A PIM in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features







Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175℃
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications



Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
1/9
Preliminary
GD100PIY120C6SN
IGBT Module
IGBT-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
VCES
VGES
IC
ICM
Ptot
Description
Collector-Emitter Voltage @ Tj=25℃
Gate-Emitter Voltage @ Tj=25℃
Collector Current @ TC=25℃
@ TC=100℃
Pulsed Collector Current tp=1ms
Total Power Dissipation @ Tj=175℃
GD100PIY120C6SN
1200
±20
155
100
200
508
Units
V
V
A
A
W
Off Characteristics
Symbol
V(BR)CES
ICES
IGES
Parameter
Collector-Emitter
Breakdown Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Test Conditions
Min.
Typ.
Max.
1200
Tj=25℃
Units
V
VCE=VCES,VGE=0V,
Tj=25℃
VGE=VGES,VCE=0V,
Tj=25℃
1.0
mA
100
nA
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
IC=2.5mA,VCE=VGE,
Tj=25℃
IC=100A,VGE=15V,
Tj=25℃
IC=100A,VGE=15V,
Tj=125℃
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
Min.
Typ.
Max.
Units
5.2
6.0
6.8
V
1.65
2.10
1.95
2/9
V
Preliminary
GD100PIY120C6SN
IGBT Module
Switching Characteristics
Symbol
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Cres
Parameter
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Input Capacitance
Reverse Transfer
Capacitance
QG
Gate Charge
RGint
Internal Gate Resistor
ISC
SC Data
Test Conditions
Min.
VCC=600V,IC=100A,
RG=4.7Ω,VGE=±15V,
Tj=25℃
Typ.
280
54
31
232
Max.
Units
ns
ns
ns
ns
3.50
mJ
7.35
mJ
281
56
33
379
ns
ns
ns
ns
5.15
mJ
11.3
mJ
9.10
nF
0.28
nF
VCC=600V,IC=100A,
VGE=15V
0.60
μC
tP≤10μs,VGE=15V,
Tj=125℃,VCC=900V,
VCEM≤1200V
2.0
Ω
400
A
VCC=600V,IC=100A,
RG=4.7Ω,VGE=±15V,
Tj=125℃
VCE=30V,f=1Mhz,
VGE=0V
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
3/9
Preliminary
GD100PIY120C6SN
IGBT Module
Diode-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
VRRM
IF
IFRM
Description
Repetitive Peak Reverse Voltage @ Tj=25℃
DC Forward Current
Repetitive Peak Forward Current tp=1ms
GD100PIY120C6SN
1200
100
200
Units
V
A
A
Characteristics Values
Symbol
VF
Parameter
Diode Forward
Voltage
Qr
Recovered Charge
IRM
Peak Reverse
Recovery Current
Erec
Reverse Recovery
Energy
Test Conditions
Tj=25℃
IF=100A,
VGE=0V
Tj=125℃
Tj=25℃
Tj=125℃
IF=100A,
Tj=25℃
VR=600V,
RG=4.7Ω,
Tj=125℃
VGE=-15V
Tj=25℃
Tj=125℃
Min.
Typ.
1.70
1.65
7.7
14.6
98
117
4.36
7.74
Max.
2.10
Units
V
μC
A
mJ
Diode-rectifier TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
VRRM
IF
IFSM
I2t
Description
Repetitive Peak Reverse Voltage @ Tj=25℃
DC Forward Current @ TC=80℃
Surge Forward Current
VR=0V,tp=10ms,Tj=45℃
I2t-value,VR=0V,tp=10ms,Tj=45℃
GD100PIY120C6SN
1600
100
Units
V
A
1100
A
6050
A2s
Characteristics Values
Symbol
VF
IR
Parameter
Diode Forward Voltage
Reverse Current
Test Conditions
IF=100A,Tj=150℃
Tj=150℃,VR=1600V
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
Min.
Typ.
1.17
Max.
2.0
4/9
Units
V
mA
Preliminary
GD100PIY120C6SN
IGBT Module
IGBT-brake-chopper TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
VCES
VGES
IC
ICM
Ptot
Description
Collector-Emitter Voltage @ Tj=25℃
Gate-Emitter Voltage @ Tj=25℃
Collector Current @ TC=25℃
@ TC=100℃
Pulsed Collector Current tp=1ms
Total Power Dissipation @ Tj=175℃
GD100PIY120C6SN
1200
±20
100
50
100
449
Units
V
V
A
A
W
Off Characteristics
Symbol
V(BR)CES
ICES
IGES
Parameter
Collector-Emitter
Breakdown Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Test Conditions
Min.
Typ.
Max.
1200
Tj=25℃
Units
V
VCE=VCES,VGE=0V,
Tj=25℃
VGE=VGES,VCE=0V,
Tj=25℃
5.0
mA
400
nA
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
IC=2.0mA,VCE=VGE,
Tj=25℃
IC=50A,VGE=15V,
Tj=25℃
IC=50A,VGE=15V,
Tj=125℃
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
Min.
Typ.
Max.
Units
5.0
6.2
7.0
V
1.85
2.30
1.95
5/9
V
Preliminary
GD100PIY120C6SN
IGBT Module
Switching Characteristics
Symbol
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Cres
Parameter
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Input Capacitance
Reverse Transfer
Capacitance
QG
Gate Charge
RGint
Internal Gate Resistor
ISC
SC Data
Test Conditions
Min.
VCC=600V,IC=50A,
RG=15Ω,VGE=±15V,
Tj=25℃
Typ.
392
74
374
380
Max.
Units
ns
ns
ns
ns
6.28
mJ
3.22
mJ
403
69
408
381
ns
ns
ns
ns
7.30
mJ
5.22
mJ
4.29
nF
0.20
nF
VCC=600V,IC=50A,
VGE=-15﹍+15V
536
nC
tP≤10μs,VGE=15V,
Tj=125℃,VCC=900V,
VCEM≤1200V
10
Ω
270
A
VCC=600V,IC=50A,
RG=15Ω,VGE=±15V,
Tj=125℃
VCE=25V,f=1Mhz,
VGE=0V
Diode-brake-chopper TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
VRRM
IF
IFRM
Description
Repetitive Peak Reverse Voltage @ Tj=25℃
DC Forward Current
Repetitive Peak Forward Current tp=1ms
GD100PIY120C6SN
1200
25
50
Units
V
A
A
Characteristics Values
Symbol
VF
Parameter
Diode Forward
Voltage
Qr
Recovered Charge
IRM
Peak Reverse
Recovery Current
Erec
Reverse Recovery
Energy
Test Conditions
Tj=25℃
IF=25A,VGE=0V
Tj=125℃
Tj=25℃
Tj=125℃
IF=25A,
Tj=25℃
VR=600V,
RG=33Ω,
Tj=125℃
VGE=-15V
Tj=25℃
Tj=125℃
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
Min.
6/9
Typ.
1.78
1.88
1.1
3.2
17
21
0.80
1.38
Max.
2.18
Units
V
μC
A
mJ
Preliminary
GD100PIY120C6SN
IGBT Module
Electrical Characteristics of NTC TC=25℃ unless otherwise noted
Symbol
R25
∆R/R
P25
Parameter
Rated Resistance
Deviation of R100
Power Dissipation
B25/50
B-value
Test Conditions
Min.
Typ.
5.0
-5
TC=100℃,R100=493.3Ω
R2=R25exp[B25/50(1/T21/(298.15K))]
Max.
5
20.0
3375
Units
kΩ
%
mW
K
IGBT Module
Symbol
VISO
LCE
RθJC
RθCS
RθCS
Tjmax
Tjop
TSTG
M
G
Parameter
Isolation Voltage RMS,f=50Hz,t=1min
Stray Inductance
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
Junction-to-Case (per Diode-rectifier)
Junction-to-Case (per IGBT-brake-chopper)
Junction-to-Case (per Diode-brake-chopper)
Case-to-Sink (per IGBT-inverter)
Case-to-Sink (per Diode-inverter)
Case-to-Sink (per Diode-rectifier)
Case-to-Sink (per IGBT-brake-chopper)
Case-to-Sink (per Diode-brake-chopper)
Case-to-Sink (Conductive grease applied)
Maximum Junction Temperature
(inverter,brake)
Maximum Junction Temperature(rectifier)
Operating Junction Temperature
Storage Temperature Range
Mounting Torque, Screw:M5
Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
4000
Typ.
40
0.125
0.214
0.237
0.141
0.400
0.009
-40
-40
3.0
4/7/2015
300
7/9
Max.
0.295
0.505
0.560
0.334
0.946
Units
V
nH
K/W
K/W
K/W
175
150
150
125
6.0
℃
℃
℃
N.m
g
Preliminary
GD100PIY120C6SN
IGBT Module
Equivalent Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
8/9
Preliminary
GD100PIY120C6SN
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
4/7/2015
9/9
Preliminary