SUSPM™
LWH300G1703
1700V 300A 2-Pack IGBT Module
Preliminary data
Features
•
•
•
•
Trench & Field Stop technology
- Low saturation voltage
- Low turn-off losses
- Short tail current
- Positive temperature coefficient
- High ruggedness
Free wheeling diodes with fast and soft reverse recovery
Industrial standard package with copper base plate
High thermal performance (AlN substrate is used)
Applications
•
•
•
Welder / Power supply
UPS / Inverter
Industrial motor driver
SUSPM3
108 x 62 x 29.9 mm
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Item
Symbol
Value
Units
VCES
1700
V
VGES
± 20
V
500
A
IC
IGBT
@ Tj = 150 °C, TC = 80 °C, Continuous
300
A
@ TC = 80 °C, tP = 1 ms
600
A
TSC
Chip Level, @ Tj = 125 °C, VGE = 15 V, VCES < 1700 V
Operating Junction Temperature *(1)
10
μs
-40~125
°C
@ Tj = 150°C, TC = 25 °C
2700
W
@ Tj = 150 °C, TC = 80 °C
1500
W
VRRM
1700
V
IF
300
A
PD
IFRM
Tj
Module
@ Tj = 150 °C, TC = 25 °C, Continuous
ICM
Tj
Diode
Conditions
tP = 1 ms
Operating Junction Temperature
Tstg
Storage Temperature
Viso
@ AC 1 minute
*(1)
600
A
-40~125
°C
-40~125
°C
3400
V
Mt
Main Terminal Mounting Torque (M6)
2.5~6.0
Nm
MS
Heat Sink Mounting Torque (M6)
3.0~6.0
Nm
W
Weight
350
g
Internal Circuit & Pin Description
Pin Number
Pin Name
1
C2E1
Pin Description
Output
2
E2
Negative DC Link Output
3
C1
Positive DC Link Output
4
G1
Gate Input for High-side
5
E1
Emitter Input for High-side
6
G2
Gate Input for Low-side
7
E2
Emitter Input for Low-side
(Note *1) The Maximum junction temperature of chip is 150 °C.
(Note *2) The value was calculated. In other word, It was not measured.
©2012 LSIS, Preliminary data Rev 0.1_01.27.2012
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LWH300G1703
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
BVCES
C-E Breakdown Voltage
VGE = 0 V, IC = 1 mA
1700
-
-
Units
V
ICES
C-E Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
-
nA
VGE(th)
G-E Threshold Voltage
VGE = VCE, IC = 300 mA
-
6.4
-
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 300 A, VGE = 15 V, TC = 25 °C
-
2.3
-
V
IC = 300 A, VGE = 15 V, TC = 125 °C
-
2.7
-
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Cies
Input Capacitance
-
26.4
-
nF
Coes
Output Capacitance
-
1.1
-
nF
Cres
Reverse Transfer Capacitance
-
0.9
-
nF
td(on)
Turn-On Delay Time
-
333
-
ns
tr
Rise Time
-
61
-
ns
td(off)
Turn-Off Delay Time
-
869
-
ns
-
549
-
ns
-
77.5
-
mJ
Dynamic Characteristics
VCE = 25 V, VGE = 0 V
f = 1 MHz, TC = 25 °C
TC = 125 °C, RG = 2.4 Ω
L = 100 μH, VDC = 900 V
VGE = 15 V ~ -15 V
IC = 300 A
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
96.1
-
mJ
Ets
Total Switching Loss
-
173.6
-
mJ
-
2.1
-
μC
-
0.25
-
μC
-
1.16
-
μC
Units
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VGE = 0 V ~ +15 V
Electrical Characteristics of Diode
Symbol
Parameter
Test Conditions
IF = 300 A
VGE = 0 V
VF
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IRRM
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
Err
Diode Reverse Recovery Energy
RG = 2.4 Ω
L = 100 μH
VDC = 900 V
VGE = 15 V ~ -15 V
IC = 300 A
Min
Typ
Max
TC = 25 °C
-
2.0
-
TC = 125 °C
-
2.1
-
TC = 25 °C
-
487
-
TC = 125 °C
-
772
-
TC = 25 °C
-
462
-
TC = 125 °C
-
516
-
TC = 25 °C
-
71
-
TC = 125 °C
-
121
-
TC = 25 °C
-
31.2
-
TC = 125 °C
-
62.0
-
V
ns
A
μC
mJ
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Rth(J-C)
Thermal Resistance (IGBT Part)
Junction-to-Case
-
0.046
-
°C/W
Rth(J-C)D
*(2)
Junction-to-Case
-
0.09
-
°C/W
Rth(C-H)
Thermal Resistance (IGBT Part)
Case-to-Heatsink
-
0.03
-
°C/W
Rth(C-H)D
Thermal Resistance (Diode Part)
Case-to-Heatsink
-
0.05
-
°C/W
Thermal Resistance (Diode Part)
* This specifications may not be considered as an assurance of characteristics and may not have same characteristics
in case of using different test systems from @ LSIS. We therefore strongly recommend prior consultation of our engineers.
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©2012 LSIS, Preliminary data Rev 0.1_01.27.2012
LWH300G1703
Fig 1. Typical IGBT Output Characteristics
Fig 2. Typical IGBT Output Characteristics
Fig 3. Typical IGBT Output Characteristics
Fig 4. Typical Diode Forward Characteristics
Fig 5. Typical Switching Time vs. Collector Current
Fig 6. Typical Switching Time vs. Collector Current
©2012 LSIS, Preliminary data Rev 0.1_01.27.2012
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LWH300G1703
Fig 7. Typical Switching Time vs. Gate Resistor
Fig 8. Typical Switching Time vs. Gate Resistor
Fig 9. Typical IGBT Switching Loss
Fig 10. Typical IGBT Switching Loss
Fig 11. Typical Recovery Characteristics of Diode
Fig 12. Typical Recovery Characteristics of Diode
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©2012 LSIS, Preliminary data Rev 0.1_01.27.2012
LWH300G1703
Fig 13. Typical Diode Switching Loss
Fig 14. Typical Diode Switching Loss
Fig 15. Typical Gate Charge Characteristics
Fig 16. Case Temperature vs. Collector Current
Fig 17. Typical Transient Thermal Impedance
©2012 LSIS, Preliminary data Rev 0.1_01.27.2012
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LWH300G1703
Package Dimension (Dimension in mm)
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©2012 LSIS, Preliminary data Rev 0.1_01.27.2012