AO3435
20V P-Channel MOSFET
General Description
Product Summary
The AO3435 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.5V. This
device is suitable for use in buck convertor
applications.
VDS = -20V
ID = -3.5A
RDS(ON) < 70mΩ
RDS(ON) < 90mΩ
RDS(ON) < 110mΩ
RDS(ON) < 130mΩ
(VGS = -4.5V)
(VGS =- 4.5V)
(VGS = -2.5V)
(VGS = -1.8V)
(VGS = -1.5V)
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Drain-Source Voltage
VDS
Steady State
-20
Gate-Source Voltage
±8
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
ID
B
Power Dissipation
A
-2.9
-2.7
-2.3
Junction and Storage Temperature Range
Rev. 2.0 November 2013
1.4
1
0.9
0.6
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A Steady-State
Steady-State
Maximum Junction-to-Lead C
A
-25
PD
TA=70°C
V
-3.5
IDM
TA=25°C
Units
V
Symbol
RθJA
RθJL
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-55 to 150
Typ
70
100
63
W
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
TJ=55°C
VGS=-4.5V, ID=-3.5A
TJ=125°C
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-3.0A
56
70
80
100
70
90
A
mΩ
mΩ
110
mΩ
mΩ
15
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Gate resistance
V
130
VSD
Rg
nA
-1
85
IS
Reverse Transfer Capacitance
±100
-0.65
100
VDS=-5V, ID=-3.5A
Output Capacitance
µA
-5
VGS=-1.5V, ID=-0.5A
Forward Transconductance
Coss
Units
VGS=-1.8V, ID=-2.0A
gFS
Crss
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
-0.7
510
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=-4.5V, VDS=-10V, ID=-3.5A
-1
V
-1.4
A
745
pF
70
pF
52
pF
18
23
Ω
5.6
11
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-3.5A, dI/dt=100A/µs
17
Qrr
Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs
4
VGS=-4.5V, VDS=-10V, RL=3Ω,
RGEN=6Ω
S
0.6
nC
1.8
nC
11
ns
10
ns
60
ns
30
ns
49
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 2.0 November 2013
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
VDS=-5V
-3.0V
-4.5V
20
-2.5V
15
-ID(A)
-ID (A)
15
-2.0V
10
10
125°C
VGS=-1.5V
5
5
25°C
0
0
0
1
2
3
4
5
0
-VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
3
Normalized On
On-Resistance
1.6
VGS=-1.5V
130
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
150
VGS=-1.8V
110
90
VGS=-2.5V
70
VGS=-4.5V
50
VGS=-2.5V
ID=-3A
1.4
VGS=-4.5V
ID=-3.5A
1.2
VGS=-1.8V
ID=-2.0A
1
VGS=-1.5V
ID=-0.5A
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
180
1E+02
ID=-3.5A
160
1E+01
12
140
1E+00
120
-IS (A)
RDS(ON) (mΩ
Ω)
0.5
100
125°C
125°C
1E-01
1E-02
25°
80
1E-03
60
1E-04
25°
40
0
2
4
6
8
1E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev. 2.0 November 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1000
VDS=-10V
ID=-3.5A
800
Capacitance (pF)
-VGS (Volts)
4
3
2
600
400
1
200
0
0
0
1
2
3
4
5
Ciss
6
Coss
Crss
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100.00
-ID (Amps)
20
1000
TJ(Max)=150°C
TA=25°C
10µs
10.00
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
RDS(ON)
limited
100
100µs
Power (W)
1ms
1.00
10ms
0.1s
0.10
DC
TJ(Max)=150°C
TA=25°C
10
1s
1
0.01
0.1
1
10
100
0.1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev. 2.0 November 2013
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
V ds
t o ff
to n
Vgs
-
DU T
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Rev. 2.0 November 2013
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 5 of 5