Preliminary Data Sheet GHIS080A060S1‐E1
COPACK (Si IGBT/SiC SBD) SOT-227
VCES =600V
IC = 80A @TC= 1000C
Power Module
Features
4
1
1
• Field StopTrench Fast IGBT ‐ Low voltage drop ‐ Low tail current ‐ Switching frequency up to 50 kHz ‐ Low leakage current • SiC Schottky Freewheeling Diode ‐ Zero reverse recovery current ‐ Temperature Independent switching behavior ‐ Positive temperature coefficient on VF 3
2
2
Applications
• Photo Voltaic Inverter • Aerospace actuators 3
• Server Power supplies • High voltage AC/DC Converter • Inductive heating and welding machine Benefits
• Outstanding power conversion efficiency at high switching frequency operation • Low switching losses and Low EMI noises 2
• Very rugged and easy mount 1
• Low junction to case thermal resistance • Direct mounting to heatsink (isolated package) • Easy paralleling due to positive TC of VF • RoHS Compliant 4
Absolute Maximum Ratings (Tj=25oC unless otherwise specified)
Parameters Symbol
Conditions
Specifications Units
Si IGBT Collector ‐ Emitter Breakdown Voltage VCES
Continuous Collector Current IC
Page 1 of 9 Rev. 1.0 600 V
TC = 25 0C
160 A
TC = 100 0C
80 A
03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
Gate‐Emitter Voltage VGES
±20 V Pulsed Collector Current ICM
120 A
600 V
Tj = 25 C
80 A
0
40 A
240 A T=10 s, Tj = 25 C 600 A
TC = 25 0C
380 W
0
200 W
SiC SBDs Maximum Reverse Voltage VRRM
Average Forward Current 0
IDAV
Tj = 150 C
t=8.3 ms, Tj = 25 0C
IFSM
Non‐repetitive Forward Surge Current 0
COPACK Modules Thermal Properties Maximum Power Dissipation PD
TC = 100 C
Operating Junction Temperature Tj
‐55 ~ 150 0
C
Storage Temperature TSTG
‐55 ~ 150 0
C
IGBT Electrical Characteristics (Tj=25oC unless otherwise specified)
Parameters Symbol
Conditions
Min Typ Max
Units
Zero Gate Voltage Collector Current ICES
VCE = 600V, VGE = 0V
‐‐ ‐‐ 2
mA
Gate‐Emitter Leakage Current IGES
VCE = 0V, VGE = 20V
‐‐ ‐‐ ±500 nA
VGE(TH)
VGE = VCE, IC = 80mA
3.5 5.5 7.5
V VCE = 15V, IC = 80A, Tj = 25 C
‐‐ 2.0 2.5 V VCE = 15V, IC = 80A, Tj = 125 0C
‐‐ 2.3 ‐‐ V VCE = 30V, VGE = 0V, f = 1 MHz
‐‐ 5440
‐‐
pF OFF ON Gate‐Emitter Threshold Voltage Collector‐Emitter Saturation Voltage VCE(SAT)
0
DYNAMIC Input Capacitance CIES
Output Capacitance COES
‐‐ 250 ‐‐
pF Reverse Transfer Capacitance CRES
‐‐ 150 ‐‐
pF ‐‐ 40 ‐‐
ns
‐‐ 80 ‐‐
ns
‐‐ 90 ‐‐
ns
‐‐ 60 ‐‐
ns
SWITCHING Turn‐On Delay Time td(on) Rise Time tr Turn‐Off Delay Time td(off) Fall Time tf Turn‐On Switching Energy Loss EON ‐‐ 0.9 ‐‐
mJ
Turn‐Off Switching Energy Loss EOFF ‐‐ 0.4 ‐‐
mJ
Page 2 of 9 VCC= 400V, IC =40A
RG= 5Ω, VGE= 15V Inductive Load, TJ=25 0C Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
‐‐ 40 ‐‐
ns
‐‐ 80 ‐‐
ns
‐‐ 95 ‐‐
ns
‐‐ 75 ‐‐
ns
EON ‐‐ 1.0 ‐‐
mJ
Turn‐Off Switching Energy Loss EOFF ‐‐ 1.0 ‐‐
mJ
Total Gate Charge Qg ‐‐ 230 ‐‐
nC
Gate‐Emitter Charge Qge ‐‐ 36 ‐‐
nC
Gate‐Collector Charge Qgc ‐‐ 112 ‐‐
nC
Short Circuit Withstanding Time tsc ‐‐ ‐‐ 10
s
Min Typ Max
Units
600 ‐‐ ‐‐
V
VR = 600V, Tj = 25 0C
‐‐ 12 140
A 0
‐‐ 360 1600
A ‐‐ 1.45 1.65 V ‐‐ ‐‐ 1.65 90 2.00 V nC
Turn‐On Delay Time td(on) Rise Time tr Turn‐Off Delay Time td(off) Fall Time tf Turn‐On Switching Energy Loss VCC= 400V, IC =40A
RG= 5Ω, VGE= 15V Inductive Load, TJ=125 0C VCC= 400V, IC =80A
VGE= 15V VCC= 400V, VGE= 15V
TJ=125 0C SiC Diode Rating and Characteristics (Tj=25oC unless otherwise specified)
Parameters Symbol
Maximum peak repetitive reverse voltage Maximum Reverse Leakage Current VRRM
IRM
Conditions
VR = 600V, Tj = 175 C
Diode Forward Voltage 0
VF IF = 40A, Tj = 25 C 0
IF = 40A, Tj = 175 C
Total Capacitive Charge QC VR=600 V, IF<IF,max
Switching Time tC ‐‐ ‐‐ <10
ns
Total Capacitance C dIF/dt = 200 A/s, Tj = 175 0C VR = 1V, f = 1 MHz
‐‐ 2100 ‐‐
pF
VR = 300V, f = 1 MHz
‐‐ 186 ‐‐
pF
VR = 600V, f = 1 MHz
‐‐ 152 ‐‐
pF
Min Typ Max
Units
‐‐ ‐‐ 0.54
0
C /W
‐‐ 0.75
0
C /W
1.5
N‐m
‐‐ 1.5 N‐m
‐‐ Thermal and Package Characteristics (Tj=25oC unless otherwise specified)
Parameters Symbol
Conditions
Junction to Case Thermal Resistance RTHJC
IGBT chip
SiC SBD chip
Mounting Torque Md
Terminal Connection Torque Mdt
Package Weight Wt
Isolation Voltage VISOL
Page 3 of 9 ‐‐ 1.3 32 IISOL < 1mA, 50/60Hz, t=1 min
Rev. 1.0 2500 V 03/02/2016 g
Preliminary Data Sheet GHIS080A060S1‐E1
IGBT Characteristics per IGBT (2*40A die in parallel inside module)
Page 4 of 9 Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
Page 5 of 9 Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
Page 6 of 9 Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
SiC Freewheeling Diode Characteristics (2 * 20A dies in parallel)
Forward Characteristics
Reverse Characteristics
Power Derating
Current Derating
Capacitance Curve
Recovery Charge
Page 7 of 9 Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
SOT-227 Package Outline
Revision History
Date
Revision
Notes
3/2/2016
1.0
Initial release
Global Power Technologies Group
20692 Prism Place
Lake Forest, CA 92630
TEL (949) 207-7500
FAX (949) 613-7600
E-mail: info@gptechgroup.com
Web site: www.gptechgroup.com
Page 8 of 9 Rev. 1.0 03/02/2016 Preliminary Data Sheet GHIS080A060S1‐E1
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration
values (also referred to as the threshold limits) permitted for such substances, or are used in
an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as
implemented March, 2013. RoHS Declarations for this product can be obtained from the
Product Documentation sections of www.gptechgroup.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since
the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently
revise the SVHC listing for the foreseeable future,please contact our office at GPTG
Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC
Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
•
Page 9 of 9 This product has not been designed or tested for use in, and is not intended for use in,
applications implanted into the human body nor in applications in which failure of the product
could lead to death, personal injury or property damage, including but not limited to equipment
used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or
similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control.
To obtain additional technical information or to place an order for this product, please contact
us. The information in this datasheet is provided by Global Power Technologies Group.
GPTG reserves the right to make changes, corrections, modifications, and improvements of
datasheet without notice.
Rev. 1.0 03/02/2016