http://www.fujielectric.com/products/semiconductor/
FGW40N120WD
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 40A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols
VCES
VGES
IC@25
IC@100
ICP
IF@25
IF@100
IFP
Short Circuit Withstand Time
tSC
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics Units
Remarks
1200
V
±20
V
65
A
TC =25°C, Tj =150°C
40
A
TC =100°C, Tj =150°C
160
A
Note *1
160
A
VCE ≤1200V, Tj ≤175°C
36
A
20
A
160
A
Note *1
VCC ≤600V, VGE=15V
5
μs
Tj ≤150°C
360
TC =25°C
W
125
TC =25°C
-40~+175
°C
-55~+175
°C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Description
Symbols
Conditions
Tj =25°C
Tj =175°C
Zero Gate Voltage Collector Current
ICES
VCE = 1200V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 40mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = 15V, IC = 40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Forward Voltage Drop
VF
Diode Reverse Recovery Time
trr1
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 40A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 40A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
Tj = 150°C
VCC = 600V
IC = 40A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
Tj =25°C
IF=20A
Tj =175°C
VCC =30V
IF = 3.0A
-di/dt=200A/µs
VCC =600V
IF=20A
-diF/dt=200A/µs
Tj =25°C
1
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
250
2
200
5.0
6.0
7.0
1.4
2.0
2.6
2.6
1250
2500
3750
55
110
165
17
34
51
Unit
µA
mA
nA
V
V
pF
60
120
180
nC
16
27
89
20
1.4
32
54
178
40
2.8
48
81
267
60
4.2
0.8
1.6
2.4
16
24
110
28
2.3
32
48
220
56
4.6
48
72
330
84
6.9
1.2
2.4
3.6
1.3
1.0
2.2
1.8
2.8
2.6
V
V
21
42
55
ns
0.15
0.38
0.61
µs
0.38
0.95
1.52
µC
ns
mJ
ns
mJ
8564
JUNE 2015
FGW40N120WD
Description
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Symbols
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
Characteristics
min.
typ.
max.
Conditions
VCC =600V
IF=20A
-diF/dt=200A/µs
Tj =175°C
Thermal resistance
Items
Symbols
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
2
min.
-
Unit
0.26
0.66
1.06
µs
1.8
4.5
7.2
µC
Characteristics
typ.
-
max.
50
0.417
1.191
Unit
°C/W
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =600V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
G
CC
C
200
100
80
Switching frequency fs [kHz]
Collector current IC [A]
150
60
Tj≤175℃
40
100
50
20
0
0
25
50
75
100
125
150
0
175
20
Case Temperature [°C]
40
60
80
Collector-Emitter corrent : ICE [A]
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
C
j
80
80
VGE =20V
15V
VGE =20V
15V
12V
60
60
12V
IC [A]
IC [A]
10V
40
40
10V
20
20
8V
8V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.5
1.0
1.5
VCE [V]
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =40mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
j
GE
C
CE
8
100
Tj=25℃
Gate Threshold Voltage VGE(th) [V]
80
Tj=175℃
IC [A]
60
40
20
0
7
max.
6
typ.
5
min.
4
3
0
5
10
15
-50
-25
0
25
50
75
Tj [℃]
VGE [V]
3
100
125
150
175
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =600V, I =40A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
4
10
C
j
20
Cies
3
10
15
VGE [V]
C [pF]
Coes
2
10
Cres
10
1
5
10
0
0
10
-2
-1
10
0
10
10
CC
200
C
GE
G
j
1000
td(off)
Switching Times [nsec]
td(off)
100
tf
td(on)
10
tr
100
tf
td(on)
tr
10
1
1
0
20
40
60
80
0
10
20
j
CC
60
CC
C
GE
G
12
10
10
Switching Energy Losses [mJ]
12
8
Eon
6
4
Eoff
2
50
G
C
GE
40
Graph.12
Typical switching losses vs. R
T =175ºC, V =600V, I =40A, L=500µH
V =15V
Graph.11
Typical switching losses vs. I
T =175ºC, V =600V, L=500µH
V =15V, R =10Ω
j
30
Gate Resistor Rg [Ω]
Collector Current IC [A]
Switching Energy Losses [mJ]
150
G
j
CC
1000
Switching Times [nsec]
100
Graph.10
Typical switching time vs. R
T =175ºC, V =600V, I =40A, L=500µH
V =15V
C
GE
50
Qg [nC]
Graph.9
Typical switching time vs. I
T =175ºC, V =600V, L=500µH
V =15V,R =10Ω
j
B
0
1
10
VCE [V]
j
8
6
Eon
4
Eoff
2
0
0
0
20
40
60
80
0
Collector Current IC [A]
10
20
30
40
Gate Resistor Rg [Ω]
4
50
60
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. I
T =175°C, V =600V, L=500µH,
V =15V,R =10Ω
Graph.13
FWD Forward voltage drop (V -I )
F
F
F
j
CC
GE
40
G
800
8
600
6
Tj=25℃
Reverse recovery Time [nsec]
Tj=175℃
30
IF [A]
25
20
15
10
trr
400
4
Qrr
2
200
5
0
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
10
20
VF [V]
IF [A]
F
GE
G
G
4
200
3
150
Collector current IC [A]
Reverse recovery loss [mJ]
j
CC
GE
40
Graph.16
Reverse biased Safe Operating Area
T ≤175°C,V =+15V/0V,R =10Ω
Graph.15
Typical reverse recovery loss vs. I
T =175°C,V =600V,L=500µH
V =15V,R =10Ω
j
30
2
1
0
100
50
0
0
10
20
30
40
50
0
200
400
600
800
1000
Collector-Emitter voltage : VCE [V]
IF [A]
5
1200
1400
Reverse Recovery Charge [uC]
35
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.17
Transient thermal resistance of IGBT
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
t [sec]
Graph.18
Transient thermal resistance of FWD
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
t [sec]
6
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
7
FGW40N120WD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
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faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
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requirements.
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8