http://www.fujielectric.com/products/semiconductor/
FGW30N60VD
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 30A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols
VCES
VGES
IC@25
IC@100
ICP
IF@25
IF@100
IFP
Short Circuit Withstand Time
tSC
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics Units
Remarks
600
V
±20
V
55
A
TC =25°C, Tj =150°C
30
A
TC =100°C, Tj =150°C
60
A
Note *1
60
A
VCE ≤600V, Tj ≤175°C
48
A
25
A
60
A
Note *1
VCC ≤320V, VGE=15V
10
μs
Tj ≤150°C
230
TC =25°C
W
125
TC =25°C
-40~+175
°C
-55~+175
°C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 250μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 600V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 30mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 30A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Forward Voltage Drop
VF
Diode Reverse Recovery Time
trr1
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 30A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 400V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj =25°C
IF=25A
Tj =175°C
VCC =30V
IF = 2.5A
-di/dt=200A/µs
VCC =400V
IF=25A
-diF/dt=200A/µs
Tj =25°C
1
Tj =25°C
Tj =175°C
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
600
250
10
200
6.2
6.7
7.2
1.60
2.05
2.1
1910
145
105
-
Unit
V
µA
mA
nA
V
V
pF
-
225
-
nC
-
35
60
200
38
1.2
-
-
0.7
-
-
36
60
235
50
2.0
-
-
1.2
-
-
1.5
1.3
1.95
-
V
V
-
40
52
ns
-
0.30
-
µs
-
0.70
-
µC
ns
mJ
ns
mJ
FGW30N60VD
Items
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Symbols
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
Characteristics
min.
typ.
max.
Conditions
VCC =400V
IF=25A
-diF/dt=200A/µs
Tj =175°C
Thermal resistance
Items
Symbols
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
2
min.
-
Unit
-
0.44
-
µs
-
2.7
-
µC
Characteristics
typ.
-
max.
50
0.641
1.191
Unit
°C/W
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =400V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
G
100
CC
C
180
160
140
Switching frequency fs [kHz]
Collector current IC [A]
80
60
Tj≤175℃
40
120
100
20
80
60
40
20
0
0
25
50
75
100
125
150
175
0
10
Case Temperature [°C]
20
30
40
50
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
C
j
60
60
VGE = 20V
50
VGE= 20V
50
15V
15V
12V
40
40
12V
IC [A]
10V
IC [A]
60
Collector-Emitter corrent : ICE [A]
30
30
10V
20
20
10
10
8V
8V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.5
1.0
1.5
2.0
VCE [V]
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =30mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
j
GE
C
60
CE
10
9
Gate Threshold Voltage VGE(th) [V]
50
IC [A]
40
30
20
Tj=175℃
Tj=25℃
8
typ.
max.
7
6
min.
5
4
3
2
10
1
0
0
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
Tj [℃]
VGE [V]
3
100
125
150
175
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =400V, I =30A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
4
10
C
j
20
Cies
3
10
15
Coes
VGE [V]
C [pF]
VCC=400V
2
10
Cres
10
1
10
5
0
10
0
-2
-1
10
0
10
10
0
150
200
250
300
G
j
CC
CC
C
GE
G
1000
1000
Switching Times [nsec]
td(off)
100
tf
td(on)
10
tr
td(off)
100
tf
tr
td(on)
10
1
1
0
10
20
30
40
50
60
70
0
10
20
50
60
G
C
j
CC
GE
40
Graph.12
Typical switching losses vs. R
T =175ºC, V =400V, I =30A, L=500µH
V =15V
Graph.11
Typical switching losses vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
j
30
Gate Resistor Rg [Ω]
Collector Current IC [A]
CC
C
GE
G
4
8
7
6
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
Switching Times [nsec]
100
Graph.10
Typical switching time vs. R
T =175ºC, V =400V, I =30A, L=500µH
V =15V
C
GE
50
Qg [nC]
Graph.9
Typical switching time vs. I
T =175ºC, V =400V, L=500µH
V =15V,R =10Ω
j
B
1
10
VCE [V]
5
4
Eon
3
2
Eoff
3
Eon
2
Eoff
1
1
0
0
0
10
20
30
40
50
60
70
0
Collector Current IC [A]
10
20
30
40
Gate Resistor Rg [Ω]
4
50
60
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. I
T =175°C, V =400V, L=500µH,
V =15V,R =10Ω
Graph.13
FWD Forward voltage drop (V -I )
F
F
F
j
CC
GE
50
G
600
6
500
5
Tj=25℃
IF [A]
30
20
10
Qrr
4
400
trr
300
3
200
2
100
1
0
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
10
20
VF [V]
50
60
70
IF [A]
F
j
CC
GE
40
Graph.16
Reverse biased Safe Operating Area
T ≤175°C,V =+15V/0V,R =10Ω
Graph.15
Typical reverse recovery loss vs. I
T =175°C,V =400V,L=500µH
V =15V,R =10Ω
j
30
GE
G
G
2.00
100
1.75
Collector current IC [A]
Reverse recovery loss [mJ]
80
1.50
1.25
1.00
0.75
0.50
60
40
20
0.25
0.00
0
0
10
20
30
40
50
60
70
0
200
400
600
Collector-Emitter voltage : VCE [V]
IF [A]
5
800
Reverse Recovery Charge [uC]
Tj=175℃
Reverse recovery Time [nsec]
40
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.17
Transient thermal resistance of IGBT
101
Zth(j-c) [℃/W]
100
-1
-2
-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
t [sec]
Graph.18
Transient thermal resistance of FWD
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
t [sec]
6
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
7
FGW30N60VD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
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requirements.
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8