AO4600
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
-30V
VDS (V) = 30V
ID = 6.9A (VGS = 10V) -5A (VGS = -10V)
RDS(ON)
< 27mΩ
< 49mΩ (VGS =- 10V)
< 32mΩ
< 64mΩ (VGS =- 4.5V)
< 50mΩ
< 120mΩ (VGS = -2.5V)
The AO4600 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
Drain-Source Voltage
30
DS
VGS
Gate-Source Voltage
±12
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
-5
5.8
-4.2
40
-30
2
2
1.44
1.44
-55 to 150
-55 to 150
ID
IDM
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-AmbientA
C
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±12
6.9
TA=25°C
B
Max p-channel
-30
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
AO4600
n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
nA
1.4
V
22.6
27
33
40
VGS=4.5V, ID=6.0A
27
32
mΩ
VGS=2.5V, ID=5A
42
50
mΩ
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
100
TJ=125°C
IS
Units
1
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
Max
V
VDS=24V, V GS=0V
VGS(th)
RDS(ON)
Typ
12
A
16
0.71
858
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
3
A
1050
pF
110
pF
80
pF
VGS=0V, VDS=0V, f=1MHz
1.4
2
Ω
9.6
12
nC
VGS=4.5V, VDS=15V, ID=6.9A
1.65
nC
nC
Qgd
Gate Drain Charge
3
tD(on)
Turn-On DelayTime
5.7
ns
tr
Turn-On Rise Time
13
ns
tD(off)
Turn-Off DelayTime
37
ns
tf
Turn-Off Fall Time
4.2
ns
trr
Body Diode Reverse Recovery time
IF=5A, dI/dt=100A/µs
15.5
Qrr
Body Diode Reverse Recovery charge
IF=5A, dI/dt=100A/µs
7.9
VGS=10V, V DS=15V, R L=2.2Ω,
RGEN=6Ω
20
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3V
25
20
2.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
10
8
VGS=2V
125°C
4
5
25°C
0
0
0
1
2
3
4
0
5
0.5
2
2.5
3
1.7
Normalized On-Resistance
60
VGS=2.5V
50
RDS(ON) (mΩ)
1.5
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
40
30
VGS=4.5V
20
VGS=10V
1.6
ID=5A
1.5
VGS=10V
VGS=4.5V
1.4
1.3
VGS=2.5V
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
70
60
1.0E+00
ID=5A
125°C
40
125°C
1.0E-01
50
IS Amps
RDS(ON) (mΩ)
1
1.0E-02
1.0E-03
1.0E-04
30
1.0E-06
0.00
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
25°C
1.0E-05
25°C
20
0.25
0.50
0.75
1.00
1.25
VSD (Volts)
Figure 6: Body diode characteristics
1.50
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
VDS=15V
ID=6.9A
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
1250
3
2
Ciss
1000
1
750
500
Coss
250
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
Power W
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
30
100µs
1ms
10.0
ID (Amps)
Crss
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4600
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
RDS(ON)
gFS
VSD
IS
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
µA
±100
nA
-1
-1.4
V
42.5
49
74
mΩ
54
64
mΩ
80
11
-0.75
120
mΩ
-1
S
V
-3
A
A
TJ=125°C
7
Units
V
-25
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
tf
trr
Qrr
-0.7
Max
-1
-5
TJ=55°C
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Typ
952
103
77
1200
VGS=0V, VDS=-15V, f=1MHz
pF
pF
pF
VGS=0V, VDS=0V, f=1MHz
5.9
30
Ω
9.5
2
3.1
12
VGS=-4.5V, VDS=-15V, ID=-5A
nC
nC
nC
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
12
4
37
12
21
13
ns
ns
ns
ns
26
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
value
in any arating,
given pulse
application
the user's
specific board design. The current rating is based on the t ≤ 10s thermal resistance
B:
Repetitive
width depends
limited byon
junction
temperature.
rating.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
B: Repetitive rating, pulse width limited by junction temperature.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
curve provides a single pulse rating.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Rev 4 : Sept 2005
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
VDS=-5V
-10V
-4.5V
20
8
6
15
-ID(A)
-ID (A)
-3V
-2.5V
10
VGS=-2V
5
125°C
4
25°C
2
0
0
0
1
2
3
4
5
0
0.5
120
1.5
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ)
1
VGS=-2.5V
80
VGS=-4.5V
60
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
40
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-10V
1.4
1.2
VGS=-2.5V
ID=-2A
1
20
0
2
4
6
8
0.8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
190
170
1.0E+00
150
ID=-2A
130
1.0E-01
110
-IS (A)
RDS(ON) (mΩ)
25
90
125°C
70
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
50
25°C
30
1.0E-05
10
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4600
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-15V
ID=-5A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
Coss
1
Crss
200
0
0
0
2
4
6
8
10
12
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
TJ(Max)=150°C
TA=25°C
20
25
30
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
30
100µs
1ms
0.1s
10ms
1s
1.0
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
10
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
Z θJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.
100
1000
Document No.
ALPHA & OMEGA
Version
Title
SEMICONDUCTOR, LTD.
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
NOTE:
LOGO
4600
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4600
AO4600L
Standard product
Green product
CODE
4600
4600
Green product
PD-00165
rev C
AO4600 Marking Description
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
SO-8 Tape and Reel Data