STGW60H65DFB
STGWT60H65DFB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
TAB
• High speed switching series
• Minimized tail current
2
• Very low saturation voltage: VCE(sat) = 1.6 V
(typ.) @ IC = 60 A
3
3
2
1
1
TO-247
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
TO-3P
• Very fast soft recovery antiparallel diode
• Lead free package
Figure 1. Internal schematic diagram
C (2, TAB)
Applications
• Photovoltaic inverters
• High frequency converters
Description
G (1)
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new "HB"
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW60H65DFB
GW60H65DFB
TO-247
Tube
STGWT60H65DFB
GWT60H65DFB
TO-3P
Tube
February 2014
This is information on a product in full production.
DocID024365 Rev 4
1/17
www.st.com
17
Contents
STGW60H65DFB, STGWT60H65DFB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID024365 Rev 4
STGW60H65DFB, STGWT60H65DFB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
650
V
(1)
A
IC
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
60
A
ICP(2)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
(1)
A
80
IF
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
60
A
IFP(2)
Pulsed forward current
240
A
PTOT
Total dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
80
1. Current level is limited by bond wires.
2. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
1.14
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID024365 Rev 4
3/17
Electrical characteristics
2
STGW60H65DFB, STGWT60H65DFB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VGE = 15 V, IC = 60 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 60 A
TJ = 175 °C
Forward on-voltage
Unit
V
1.60
2
1.75
V
1.85
IF = 60 A
VF
Max.
650
VGE = 15 V, IC = 60 A
VCE(sat)
Typ.
2
2.6
V
IF = 60 A TJ = 125 °C
1.7
V
IF = 60 A TJ = 175 °C
1.6
V
6.0
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
VCE = 650 V
25
µA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 60 A,
VGE = 15 V, see Figure 28
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID024365 Rev 4
Min.
Typ.
Max.
Unit
-
7792
-
pF
-
262
-
pF
-
158
-
pF
-
306
-
nC
-
126
-
nC
-
58
-
nC
STGW60H65DFB, STGWT60H65DFB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
1.
Parameter
Test conditions
Min.
Typ.
Turn-on delay time
-
51
Current rise time
-
22
-
2218
A/µs
160
ns
Turn-on current slope
VCE = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
see Figure 27
Turn-off delay time
Current fall time
Max.
Unit
ns
-
ns
-
18
-
ns
Turn-on switching losses
-
1086
-
µJ
Turn-off switching losses
-
626
-
µJ
Total switching losses
-
1712
-
µJ
Turn-on delay time
-
50
Current rise time
-
30
Turn-on current slope
-
2050
A/µs
184
ns
VCE = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 27
Turn-off delay time
Current fall time
ns
-
ns
-
117
-
ns
Turn-on switching losses
-
2350
-
µJ
Turn-off switching losses
-
1017
-
µJ
Total switching losses
-
3367
-
µJ
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 60 A, VR = 400 V,
di/dt = 100A/µs, VGE = 15 V,
see Figure 27
Min.
Typ.
Max.
Unit
-
60
-
ns
-
99
-
nC
-
3.3
-
A
-
187
-
A/µs
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
68
-
µJ
trr
Reverse recovery time
-
310
-
ns
Qrr
Reverse recovery charge
-
1550
-
nC
-
10
-
A
-
59
-
A/µs
-
674
-
µJ
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 60 A, VR = 400 V,
di/dt = 100A/µs, VGE = 15 V,
TJ = 175 °C, see Figure 27
DocID024365 Rev 4
5/17
Electrical characteristics
2.1
STGW60H65DFB, STGWT60H65DFB
Electrical characteristics (curve)
Figure 2. Output characteristics (TJ = 25°C)
GIPD230820131147FSR
IC
(A)
VGE =15V
Figure 3. Output characteristics (TJ = 175°C)
VGE =15V
11V
100
100
80
80
9V
60
40
20
20
1
2
3
4
GIPD270820131335FSR
IC
(A)
TJ =175°C
100
9V
7V
0
0
VCE(V)
Figure 4. Transfer characteristics
11V
60
40
0
0
GIPD230820131205FSR
IC
(A)
2
1
3
4
VCE(V)
Figure 5. Collector current vs. case temperature
GIPD270820131347FSR
IC
(A)
80
-40°C
80
60
25°C
60
40
VCE= 10V
40
20
20
0
7
8
9
10
11
Figure 6. Power dissipation vs. case
temperature
GIPD270820131401FSR
Ptot
(W)
0
0
VGE(V)
25
50
75
100 125 150
Figure 7. VCE(sat) vs. junction temperature
GIPD270820131410FSR
VCE(sat)
(V)
VGE= 15V
IC= 120A
2.6
300
TC(°C)
2.4
2.2
2.0
200
IC= 60A
1.8
1.6
100
IC= 30A
1.4
0
0
6/17
25
50
75
100 125 150
TC(°C)
1.2
-50
DocID024365 Rev 4
0
50
100
150 TJ(°C)
STGW60H65DFB, STGWT60H65DFB
Electrical characteristics
Figure 8. VCE(sat) vs. collector current
GIPD270820131423FSR
VCE(sat)
(V)
2.4
VGE= 15V
TJ= 175°C
Figure 9. Forward bias safe operating area
GIPD270820131505FSR
IC
(A)
100
2.2
TJ= 25°C
2.0
10 µs
1.8
100 µs
10
1.6
1 ms
TJ= -40°C
1.4
1
1.2
(single pulse TC=25°C,
TJ<=175°C; VGE=15V)
1.0
0.8
0
20
40
60
80
100
IC(A)
Figure 10. Diode VF vs. forward current
GIPD270820131550FSR
IC
(A)
1
10
100
VCE(V)
Figure 11. Normalized BVCES vs. junction
temperature
GIPD280820131415FSR
BVCES
(norm)
2.8
2.4
0.1
1.1
TJ= -40 °C
IC= 2mA
TJ= 25 °C
2
1.0
TJ= 175 °C
1.6
1.2
0.8
20
40
60
80
100
Figure 12. Normalized VGE(th) vs. junction
temperature
GIPD280820131503FSR
VGE(th)
0.9
-50
IF(A)
(norm)
0
50
100
150
TJ(°C)
Figure 13. Gate charge vs. gate-emitter voltage
GIPD280820131507FSR
VGE
(V)
VCC= 520V, IC= 60A
Ig= 1mA
IC= 1mA
14
1.0
12
10
0.9
8
0.8
6
4
0.7
2
0.6
-50
0
50
100
150
TJ(°C)
DocID024365 Rev 4
0
0
50 100 150 200 250 300 350 Qg(nC)
7/17
Electrical characteristics
STGW60H65DFB, STGWT60H65DFB
Figure 14. Switching losses vs temperature
GIPD290820131623FSR
E (μJ)
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 60A
Figure 15. Switching losses vs gate resistance
GIPD280820131527FSR
C(pF)
EON
EON
2600
2900
1800
2100
EOFF
EOFF
1000
1300
VCC = 400V, VGE = 15V
IC = 60A, TJ = 175 °C
200
25
50
75
100
125
500
2
TJ(°C)
150
6
10
14
RG(Ω)
18
Figure 16. Switching losses vs collector current Figure 17. Switching losses vs collector emitter
voltage
GIPD280820131538FSR
E (μJ)
7000
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
6000
E (μJ)
4300
GIPD280820131554FSR
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 60A
EON
3300
5000
EON
4000
2300
EOFF
EOFF
3000
2000
1300
1000
0
0
20
40
60
80
300
150
IC(A)
100
Figure 18. Switching times vs collector current
350
450
VCE(V)
Figure 19. Switching times vs gate resistance
GIPD280820131613FSR
(ns)
250
GIPD280820131622FSR
(ns)
TJ= 175°C, VGE= 15V
IC= 60A, VCC= 400V
tdoff
100
1000
tdon
tf
tdoff
tr
100
10
tdon
tr
1
0
8/17
tf
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
20 40
60
80 100 120 140
IC(A)
DocID024365 Rev 4
10
2
4
6
8
10 12 14 16 18 20 Rg(Ω)
STGW60H65DFB, STGWT60H65DFB
Electrical characteristics
Figure 20. Reverse recovery current vs. diode
current slope
GIPD280820131635FSR
Irm
(A)
80
Vr= 400V, IF= 60A
Figure 21. Reverse recovery time vs. diode
current slope
Trr
(μs)
GIPD280820131643FSR
Vr= 400V, IF= 60A
300
70
TJ= 175°C
250
60
50
200
40
150
TJ= 175°C
TJ= 25°C
30
100
20
50
10
0
TJ= 25°C
0
500
1000 1500 2000 2500 di/dt(A/μS
Figure 22. Reverse recovery charge vs. diode
current slope
Qrr
(nC)
0
0
GIPD280820131650FSR
Vr= 400V, IF= 60A
1000 1500 2000 2500 di/dt(A/μS)
Figure 23. Reverse recovery energy vs. diode
current slope
GIPD280820131656FSR
Err
(μJ)
800
4000
3500
TJ= 175°C
700
TJ= 175°C
3000
600
2500
500
2000
400
1500
300
Vr= 400V, IF= 60A
200
1000
TJ= 25°C
500
0
0
500
500
TJ= 25°C
100
1000 1500 2000 2500 di/dt(A/μS)
0
0
500
1000 1500 2000 2500 di/dt(A/μS)
Figure 24. Capacitance variations
GIPD280820131518FSR
C(pF)
10000
Cies
1000
Coes
Cres
100
10
0.1
1
10
VCE(V)
DocID024365 Rev 4
9/17
Electrical characteristics
STGW60H65DFB, STGWT60H65DFB
Figure 25. Thermal impedance
ZthTO2T_A
K
d=0.5
0.2
0.1
10 -1
0.05
0.02
0.01
Single pulse
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
Figure 26. Thermal impedance for diode
10/17
DocID024365 Rev 4
tp (s)
STGW60H65DFB, STGWT60H65DFB
3
Test circuits
Test circuits
Figure 27. Test circuit for inductive load
switching
Figure 28. Gate charge test circuit
AM01504v1
Figure 29. Switching waveform
AM01505v1
Figure 30. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ta
tb
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
VF
dv/dt
AM01506v1
DocID024365 Rev 4
AM01507v1
11/17
Package mechanical data
4
STGW60H65DFB, STGWT60H65DFB
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 31. TO-247 drawing
0075325_G
12/17
DocID024365 Rev 4
STGW60H65DFB, STGWT60H65DFB
Package mechanical data
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID024365 Rev 4
5.70
13/17
Package mechanical data
STGW60H65DFB, STGWT60H65DFB
Figure 32. TO-3P drawing
8045950_A
14/17
DocID024365 Rev 4
STGW60H65DFB, STGWT60H65DFB
Package mechanical data
Table 9. TO-3P mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.60
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1
1.20
b1
1.80
2.20
b2
2.80
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
E
13.90
15.40
15.80
E1
13.60
E2
9.60
e
5.15
5.45
5.75
L
19.50
20
20.50
L1
3.50
L2
18.20
øP
3.10
18.40
18.60
3.30
Q
5
Q1
3.80
DocID024365 Rev 4
15/17
Revision history
5
STGW60H65DFB, STGWT60H65DFB
Revision history
Table 10. Document revision history
16/17
Date
Revision
Changes
12-Mar-2013
1
Initial release.
30-Aug-2013
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curve).
31-Oct-2013
3
Updated VCE(sat) in Table 4: Static characteristics.
24-Feb-2014
4
Updated title and description in cover page.
DocID024365 Rev 4
STGW60H65DFB, STGWT60H65DFB
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17/17