AOTF10B65M2
650V, 10A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest Alpha IGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(sat) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
10A
VCE(sat) (TJ=25°C)
1.6V
Applications
• Motor Drives
• Sewing Machines
• Servo and General Purpose Inverters
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-220F
C
G
C
E
G
E
AOTF10B65M2
Orderable Part Number
Package Type
AOTF10B65M2
TO220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
Continuous Collector TC=25°C
TC=100°C
Current
Pulsed Collector Current, Limited by TJmax
Turn off SOA, VCE≤650V, Limited by TJmax
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
Short circuit withstanding time 1)
VGE=15V, VCC≤400V, TJ≤150°C
Power Dissipation
TC=25°C
TC=100°C
Junction and Storage Temperature Range
IC
Form
Minimum Order Quantity
Tube
1000
AOTF10B65M2
650
Units
V
±30
V
202)
102)
I CM
30
A
I LM
30
A
IF
202)
102)
A
I FM
30
A
t SC
5
µs
PD
T J , T STG
30
12
-55 to 150
Maximum lead temperature for soldering
TL
300
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
AOTF10B65M2
Parameter
Symbol
R θ JA
65
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
4.2
R θ JC
Maximum Diode Junction-to-Case
R θ JC
5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) TO220F IC follows TO220/TO263.
Rev.1.0: April 2015
A
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W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=10A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=10A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.6
2
TJ=125°C
-
1.86
-
TJ=150°C
-
1.95
-
TJ=25°C
-
1.6
2
TJ=125°C
-
1.63
-
TJ=150°C
-
1.62
-
-
5.1
-
V
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=150°C
-
-
1000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=10A
-
9
-
S
-
647
-
pF
-
82
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
25
-
pF
Qg
Total Gate Charge
-
24
-
nC
Q ge
Gate to Emitter Charge
-
5.5
-
nC
Q gc
Gate to Collector Charge
-
12
-
nC
I C(SC)
Short circuit collector current
-
70
-
A
VGE=0V, VCC=0V, f=1MHz
Gate resistance
Rg
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
5.8
-
Ω
VGE=15V, VCC=520V, IC=10A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤150°C
t D(on)
Turn-On DelayTime
-
12
-
ns
tr
Turn-On Rise Time
-
16
-
ns
t D(off)
Turn-Off Delay Time
-
91
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.18
-
mJ
TJ=25°C
VGE=15V, VCC=400V, IC=10A,
RG=30Ω
E off
Turn-Off Energy
-
0.13
-
mJ
E total
t rr
Total Switching Energy
-
0.31
-
mJ
Diode Reverse Recovery Time
-
262
-
Q rr
Diode Reverse Recovery Charge
-
0.5
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
-
4
-
A
t D(on)
Turn-On DelayTime
-
11
-
ns
tr
Turn-On Rise Time
-
17
-
ns
t D(off)
Turn-Off Delay Time
-
108
-
ns
tf
Turn-Off Fall Time
-
23
-
ns
E on
Turn-On Energy
-
0.2
-
mJ
E off
Turn-Off Energy
-
0.21
-
mJ
E total
t rr
Total Switching Energy
-
0.41
-
mJ
-
261
-
Q rr
Diode Reverse Recovery Charge
-
0.7
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
5.2
-
A
TJ=25°C
IF=10A, di/dt=200A/µs, VCC=400V
TJ=150°C
VGE=15V, VCC=400V, IC=10A,
RG=30Ω
Diode Reverse Recovery Time
TJ=150°C
IF=10A, di/dt=200A/µs, VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
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Page 2 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
20V
20V
17V
15V
40
17V
40
15V
VCE
IC (A)
IC (A)
13V
30
11V
20
13V
30
11V
20
9V
9V
10
10
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
30
2
4
5
6
7
30
25
20
-40°C
20
IF (A)
150°C
15
10
25°C
15
150°C
10
25°C
5
5
-40°C
0
0
3
6
9
12
15
0
0.5
VGE (V)
Figure 3: Transfer Characteristic
1
1.5
2
2.5
3
VF (V)
Figure 4: Diode Characteristic
5
3
4
2.5
20A
2
IC=20A
3
VSD (V)
VCE(sat) (V)
3
VCE=20V
25
IC (A)
1
VCE (V)
Figure 2: Output Characteristic
(Tj=150°C)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
IC=10A
2
10A
1.5
5A
1
IF=1A
1
IC=5A
0.5
0
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
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0
25
50
75
100
125
150
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=10A
1000
Cies
100
Coes
10
Cres
Capacitance (pF)
VGE (V)
12
9
6
3
0
1
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
8
16
24
32
40
VCE (V)
Figure 8: Capacitance Characteristic
50
Power Disspation (W)
40
30
20
10
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Power Disspation as a Function of Case
1E-03
20
1E-04
1E-05
12
ICE(S) (A)
Current rating IC (A)
16
8
VCE=650V
1E-06
VCE=520V
1E-07
4
1E-08
0
1E-09
25
50
75
100
125
150
Rev.1.0: April 2015
0
25
50
75
100
125
150
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
TCASE (°C)
Figure 11: Current De-rating
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (ns)
1000
Switching Time (ns)
10000
Td(off)
Tf
Td(on)
Tr
100
10
1
100
10
1
5
8
11
14
17
0
20
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=30Ω)
10000
150
200
250
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=10A)
25
50
300
6
5
VGE(TH) (V)
Switching Time (ns)
100
7
Td(off)
Tf
Td(on)
Tr
1000
50
100
4
3
10
2
1
1
25
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30Ω)
Rev.1.0: April 2015
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0
75
100
125
150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.5
1.5
Eoff
Eoff
1.2
Switching Energy (mJ)
1.2
SwitchIng Energy (mJ)
Eon
Eon
Etotal
0.9
0.6
0.3
Etotal
0.9
0.6
0.3
0
0
5
8
11
14
17
20
0
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=30Ω)
50
150
200
250
300
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=10A)
0.5
0.5
Eoff
Eoff
Switching Energy (mJ)
Eon
0.4
Switching Energy (mJ)
100
Etotal
0.3
0.2
0.1
Eon
0.4
Etotal
0.3
0.2
0.1
0
0
25
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=10A, Rg=30Ω)
Rev.1.0: April 2015
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200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C, VGE=15V, IC=10A, Rg=30Ω)
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
360
25
150°C
800
20
600
15
30
300
25
150°C
Trr
25°C
Qrr
400
Trr (ns)
Irm (A)
Qrr (nC)
240
20
25°C
180
15
S
1000
10
150°C
120
Irm
5
200
25°C
60
5
25°C
150°C
0
0
5
8
11
14
10
S
17
0
20
IF (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
1000
8
11
14
17
20
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
360
30
800
0
5
30
300
24
25
150°C
150°C
400
20
25°C
Trr
180
15
12
Irm
200
6
25°C
0
0
200
60
25°C
10
5
S
0
300
400
500
600
700
800
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=10A)
Rev.1.0: April 2015
150°C
120
150°C
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S
25°C
Trr (ns)
18
Qrr
Irm (A)
Qrr (nC)
240
600
0
200
300
400
500
600
700
800
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=10A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
T
0.0001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
1E-06
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
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Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015
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Page 9 of 9