STGW40S120DF3,
STGWA40S120DF3
Trench gate field-stop IGBT, S series
1200 V, 40 A low drop
Datasheet - production data
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 40 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
72
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• Industrial drives
Figure 1. Internal schematic diagram
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• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
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Table 1. Device summary
Order code
Marking
Package
Packing
STGW40S120DF3
G40S120DF3
TO-247
Tube
STGWA40S120DF3
G40S120DF3
TO-247 long leads
Tube
December 2014
This is information on a product in full production.
DocID026373 Rev 2
1/18
www.st.com
Contents
STGW40S120DF3, STGWA40S120DF3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
TO-247, STGW40S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
TO-247 long leads, STGWA40S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026373 Rev 2
STGW40S120DF3, STGWA40S120DF3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
80
A
IF
Continuous forward current at TC = 100 °C
40
A
IFP(1)
Pulsed forward current
160
A
PTOT
Total dissipation at TC = 25 °C
468
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
0.74
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID026373 Rev 2
3/18
18
Electrical characteristics
2
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.65
VGE = 15 V, IC = 40 A,
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 25 A
TJ = 175 °C
Forward on-voltage
Max.
1200
VGE = 15 V, IC = 40 A
VCE(sat)
Typ.
2.15
1.9
V
2.05
IF = 40 A
2.85
IF = 40 A TJ = 125 °C
2.25
V
IF = 40 A TJ = 175 °C
2.1
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 2 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
3.95
V
7
V
VCE = 1200 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/18
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 960 V, IC =40 A,
VGE = 15 V, see Figure 30
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026373 Rev 2
Min.
Typ.
Max.
Unit
-
2475
-
pF
-
185
-
pF
-
95
-
pF
-
129
-
nC
-
19
-
nC
-
68
-
nC
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Min.
Typ.
Max.
Unit
Turn-on delay time
-
35
-
ns
Current rise time
-
15
-
ns
-
2100
-
A/µs
-
148
-
ns
-
264
-
ns
Turn-on current slope
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG= 15 Ω
(see Figure 29)
Turn-off delay time
Current fall time
Turn-on switching losses
-
1.433
-
mJ
(2)
Turn-off switching losses
-
3.83
-
mJ
Total switching losses
-
5.26
-
mJ
Turn-on delay time
-
32
-
ns
Current rise time
-
18
-
ns
Turn-on current slope
-
1800
-
A/µs
-
154
-
ns
-
4.46
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 600 V, IC = 40 A,
RG = 15 Ω, VGE = 15 V,
TJ = 175 °C, (see Figure 29)
Turn-off delay time
Current fall time
(1)
Turn-on switching losses
-
2.9
-
mJ
(2)
Turn-off switching losses
-
5.6
-
mJ
Ets
Total switching losses
-
8.5
-
mJ
tsc
Short-circuit withstand time
-
µs
Eon
Eoff
1.
Test conditions
(1)
Eon
Eoff
Parameter
VCC ≤ 600 V, VGE= 15 V,
TJstart ≤ 150 °C, VP < 1200 V
10
Energy losses include reverse recovery of the diode.
2. Turn-off losses also include the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
355
-
ns
-
2575
-
nC
-
25
-
A
-
1110
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dlrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
1.12
-
mJ
trr
Reverse recovery time
-
667
-
ns
Qrr
Reverse recovery charge
-
8500
-
nC
Irrm
Reverse recovery current
-
37
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
3.9
-
mJ
IF = 40 A, VR = 600 V,
VGE = 15 V,
di/dt = 1000 A/µs,
(see Figure 29)
IF = 40 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs,
(see Figure 29)
DocID026373 Rev 2
5/18
18
Electrical characteristics
2.1
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
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Figure 4. Output characteristics (TJ = 25 °C)
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Figure 5. Output characteristics (TJ = 175 °C)
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Figure 6. VCE(sat) vs. junction temperature
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DocID026373 Rev 2
7- ƒ&
Figure 7. VCE(sat) vs. collector current
6/18
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STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
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Figure 9. Forward bias safe operating area
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Figure 10. Transfer characteristics
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Figure 11. Diode VF vs. forward current
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Figure 12. Normalized VGE(th) vs. junction
temperature
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Figure 13. Normalized VBR(CES) vs. junction
temperature
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DocID026373 Rev 2
7-ƒ&
7/18
18
Electrical characteristics
STGW40S120DF3, STGWA40S120DF3
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
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Figure 16. Switching loss vs. collector current
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Figure 17. Switching loss vs. gate resistance
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Figure 18. Switching loss vs. temperature
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Figure 19. Switching loss vs. collector emitter
voltage
*,3*/0
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P-
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(RII
(RII
(RQ
(RQ
,& $9*(
8/18
7-ƒ&
DocID026373 Rev 2
9 5* ȍ
7M ƒ&
9&(9
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Figure 20. Short-circuit time and current vs VGE Figure 21. Switching times vs. collector current
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—V
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QV
,VF
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Figure 22. Switching times vs. gate resistance
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Figure 23. Reverse recovery current vs. diode
current slope
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QV
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current slope
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Figure 25. Reverse recovery charge vs. diode
current slope
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7- DocID026373 Rev 2
*,3*/0
9&& 99*( 9,) ƒ&
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9/18
18
Electrical characteristics
STGW40S120DF3, STGWA40S120DF3
Figure 26. Reverse recovery energy vs. diode
current slope
*,3*/0
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P-
9&& 99*( 9,) ƒ&
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DocID026373 Rev 2
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
Figure 27. Thermal impedance for IGBT
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Figure 28. Thermal impedance for diode
.
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DocID026373 Rev 2
WSV
11/18
18
Test circuits
3
STGW40S120DF3, STGWA40S120DF3
Test circuits
Figure 29. Test circuit for inductive load
switching
Figure 30. Gate charge test circuit
AM01505v1
AM01504v1
Figure 31. Switching waveform
Figure 32. Diode recovery time waveform
90%
10%
VG
IF
trr
90%
VCE
Qrr
di/dt
ts
tf
10%
Tr(Voff)
Tcross
10% IRRM
90%
IC
Tr(Ion)
Ton
IRRM
10%
Td(off)
Td(on)
t
VRRM
Tf
Toff
dv/dt
AM01506v1
12/18
DocID026373 Rev 2
AM01507v1
STGW40S120DF3, STGWA40S120DF3
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247, STGW40S120DF3
Figure 33. TO-247 outline
0075325_H
DocID026373 Rev 2
13/18
18
Package information
STGW40S120DF3, STGWA40S120DF3
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
14/18
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026373 Rev 2
5.70
STGW40S120DF3, STGWA40S120DF3
4.2
Package information
TO-247 long leads, STGWA40S120DF3
Figure 34. TO-247 long lead outline
8463846_A_F
DocID026373 Rev 2
15/18
18
Package information
STGW40S120DF3, STGWA40S120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
16/18
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026373 Rev 2
6.25
STGW40S120DF3, STGWA40S120DF3
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
16-May-2014
1
Initial release.
2
Updated Section 1: Electrical ratings and Section 2: Electrical
characteristics.
Inserted Section 2.1: Electrical characteristics (curves).
Updated Section 4: Package information.
18-Dec-2014
Changes
DocID026373 Rev 2
17/18
18
STGW40S120DF3, STGWA40S120DF3
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