AOK40B65H1
650V,40A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
• Short-circuit ruggedness
VCE
IC (TC=100°C)
650V
40A
VCE(sat) (TJ=25°C)
1.9V
Applications
• Welding Machines
• Motor Drives
• UPS & Solar Inverters
• Very High Switching Frequency Applications
Top View
C
TO-247
G
G
AOK40B65H1
Orderable Part Number
C
E
Package Type
AOK40B65H1
TO247
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
E
Form
Minimum Order Quantity
Tube
240
AOK40B65H1
650
Units
V
±30
V
Continuous Collector TC=25°C
TC=100°C
Current
IC
Pulsed Collector Current, Limited by TJmax
I CM
120
A
Turn off SOA, VCE ≤ 650V, Limited by TJmax
I LM
120
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
IF
80
40
34
17
A
A
Diode Pulsed Current, Limited by TJmax
I FM
120
A
Short circuit withstanding time 1)
VGE = 15V, VCC ≤ 300V, TJ ≤ 175°C
t SC
5
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
PD
T J , T STG
300
150
-55 to 175
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
AOK40B65H1
R θ JA
Maximum Junction-to-Ambient
40
R θ JC
Maximum IGBT Junction-to-Case
0.5
Maximum Diode Junction-to-Case
R θ JC
1.5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev.1.0: April 2015
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W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=40A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=40A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.9
2.4
TJ=125°C
-
2.36
-
TJ=175°C
-
2.63
-
V
TJ=25°C
-
2.22
2.8
TJ=125°C
-
2.45
-
TJ=175°C
-
2.35
-
-
4.9
-
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=175°C
-
-
10000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=40A
-
30
-
S
-
1761
-
pF
-
175
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
64
-
pF
Qg
Total Gate Charge
-
63
-
nC
Q ge
Gate to Emitter Charge
-
18
-
nC
Q gc
Gate to Collector Charge
-
25
-
nC
-
256
-
A
VGE=0V, VCC=0V, f=1MHz
Rg
Gate resistance
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
14
-
Ω
ns
I C(SC)
VGE=15V, VCC=520V, IC=40A
VGE=15V, VCC=300V,
tsc≤5us, TJ≤175°C
Short circuit collector current
t D(on)
Turn-On DelayTime
-
41
-
tr
Turn-On Rise Time
-
36
-
ns
t D(off)
Turn-Off Delay Time
-
130
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
1.27
-
mJ
E off
Turn-Off Energy
-
0.46
-
mJ
E total
t rr
Total Switching Energy
-
1.73
-
mJ
Diode Reverse Recovery Time
-
346
-
Q rr
Diode Reverse Recovery Charge
TJ=25°C
VGE=15V, VCC=400V, IC=40A,
RG=7.5Ω
-
1
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
-
6.2
-
A
t D(on)
Turn-On DelayTime
-
38
-
ns
tr
Turn-On Rise Time
-
44
-
ns
t D(off)
Turn-Off Delay Time
-
155
-
ns
tf
Turn-Off Fall Time
-
18
-
ns
E on
Turn-On Energy
-
1.35
-
mJ
E off
Turn-Off Energy
-
0.8
-
mJ
E total
t rr
Total Switching Energy
-
2.15
-
mJ
Diode Reverse Recovery Time
-
535
-
Q rr
Diode Reverse Recovery Charge
-
2.1
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
7.9
-
A
TJ=25°C
IF=40A,dI/dt=200A/µs,VCC=400V
I rm
TJ=175°C
VGE=15V, VCC=400V, IC=40A,
RG=7.5Ω
TJ=175°C
IF=40A,dI/dt=200A/µs,VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
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Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
20V
15V
20V
17V
120
17V
120
13V
11V
60
IC (A)
IC (A)
15V
90
13V
90
11V
60
9V
9V
30
30
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
100
120
VCE=20V
100
80
-40°C
60
175°C
IF (A)
IC (A)
80
25°C
60
40
40
25°C
20
-40°C
175°C
20
0
0
3
6
9
12
15
0
1
7.5
4
6
3.2
3
3
4
5
80A
IC=80A
4.5
2
VF (V)
Fig 4: Diode Characteristic
VSD (V)
VCE(sat) (V)
VGE(V)
Fig 3: Transfer Characteristic
IC=40A
2.4
40A
1.6
5A
1.5
0.8
IC=20A
IF=1A
0
0
0
25
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
50
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0
25
50
75
100
125
150
175
Temperature (°C )
Fig 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=40A
Cies
12
Coes
Capacitance (pF)
VGE(V)
1000
9
6
3
100
Cres
10
0
1
0
15
30
45
60
75
0
8
Qg(nC)
Fig 7: Gate-Charge Characteristics
16
24
32
40
VCE(V)
Fig 8: Capacitance Characteristic
350
Power Disspation (W)
300
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
100
1E-02
1E-03
1E-04
60
ICE(S) (A)
Current rating IC(A)
80
40
VCE=650V
1E-05
1E-06
20
VCE=520V
1E-07
0
1E-08
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Current De-rating
Rev.1.0: April 2015
0
25
50
75
100
125
150
175
Temperature (°C )
Fig 12: Diode Reverse Leakage Current vs. Junction
Temperature
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
100
10
1
100
10
1
20
30
40
50
60
70
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω)
10000
80
0
20
40
60
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=40A)
0
25
80
7
Td(off)
Tf
Td(on)
Tr
6
VGE(TH)(V)
1000
Switching Time (nS)
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
Tf
Td(on)
Tr
100
5
4
3
10
2
1
1
25
Rev.1.0: April 2015
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω)
175
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50
75
100
125
150
175
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5
Eoff
Eoff
4
Switching Energy (mJ)
8
SwitchIng Energy (mJ)
Eon
Eon
Etotal
6
4
2
Etotal
3
2
1
0
0
20
30
40
50
60
70
80
0
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω)
20
3
60
80
3
Eoff
Eoff
Eon
Eon
2.5
Switching Energ y (mJ)
2.5
Switching Energy (mJ)
40
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=40A)
Etotal
2
1.5
1
0.5
Etotal
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω)
Rev.1.0: April 2015
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200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=40A,Rg=7.5Ω)
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
2400
40
600
500
Irm(A)
20
20
Trr
300
15
25°C
200
175°C
10
Irm
175°C
10
600
5
25°C
0
25°C
0
20
30
0
40
50
60
70
80
IF(A)
Fig 21: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
3000
2500
0
20
50
60
70
80
IF (A)
Fig 22: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
90
600
75
500
60
400
45
Irm(A)
25°C
1500
Trr (nS)
Qrr (nC)
Qrr
30
40
24
20
175°C
175°C
2000
S
100
Trr
16
300
12
S
25°C
Trr (nS)
Qrr (nC)
400
30
Qrr
25
175°C
175°C
1800
1200
30
S
3000
25°C
1000
30
175°C
200
8
175°C
Irm
500
15
100
4
25°C
S
25°C
0
0
200
300
0
500
600
700
800
di/dt (A/µS)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=40A)
Rev.1.0: April 2015
400
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0
200
300
400
500
600
700
800
di/dt (A/µS)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=40A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
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Page 8 of 9
Rev.1.0: April 2015
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Page 9 of 9