STGW20IH125DF
STGWT20IH125DF
1250 V, 20 A IH series
trench gate field-stop IGBT
Datasheet - production data
Features
• Designed for soft commutation only
TAB
• Maximum junction temperature: TJ = 175 °C
• Minimized tail current
2
• VCE(sat) = 2.0 V (typ.) @ IC = 15 A
3
3
1
2
1
• Tight parameters distribution
• Safe paralleling
• Very low VF soft recovery co-packaged diode
TO-247
TO-3P
• Low thermal resistance
• Lead free package
Applications
Figure 1. Internal schematic diagram
• Induction heating
• Microwave oven
C (2, TAB)
• Resonant converters
Description
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW20IH125DF
G20IH125DF
TO-247
Tube
STGWT20IH125DF
G20IH125DF
TO-3P
Tube
February 2014
This is information on a product in full production.
DocID025269 Rev 2
1/17
www.st.com
17
Contents
STGW20IH125DF, STGWT20IH125DF
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1250
V
IC
Continuous collector current at TC = 25 °C
40
A
IC
Continuous collector current at TC = 100 °C
20
A
ICP(1)
Pulsed collector current
80
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
40
A
IF
Continuous forward current at TC = 100 °C
20
A
IFP(1)
Pulsed forward current
80
A
PTOT
Total dissipation at TC = 25 °C
259
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
1. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.58
°C/W
RthJC
Thermal resistance junction-case diode
1.47
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID025269 Rev 2
3/17
Electrical characteristics
2
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Max.
1250
VGE = 15 V, IC = 15 A
VCE(sat)
Typ.
V
2
VGE = 15 V, IC = 15 A
Collector-emitter saturation TJ = 125 °C
voltage
VGE = 15 V, IC = 15 A
TJ = 175 °C
Unit
2.5
2.2
V
2.3
VGE = 15 V, IC = 30 A
2.55
IF = 15 A
1.1
IF = 15 A TJ = 125 °C
1.05
IF = 15 A TJ = 175 °C
1
1.5
Forward on-voltage
V
IF= 30A
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500 μA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
1.25
5
6
7
V
VCE = 1250 V
25
μA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 600 V, IC = 15 A,
VGE = 15 V, see Figure 25
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID025269 Rev 2
Min.
Typ.
Max.
Unit
-
1290
-
pF
-
96
-
pF
-
30.6
-
pF
-
69
-
nC
-
7.2
-
nC
-
40.8
-
nC
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(off)
tf
Parameter
Test conditions
Turn-off delay time
Current fall time
Turn-off switching losses
td(off)
Turn-off delay time
Eoff(1)
Typ.
Max.
106
Eoff(1)
tf
Min.
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V, see
Figure 23
ns
-
79
-
ns
-
410
-
μJ
109
Current fall time
Turn-off switching losses
VCE = 600 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 23
Unit
ns
-
176
-
ns
-
820
-
μJ
Unit
1. Turn-off losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
VCC = 900V, RG = 10 Ω,
IC = 30 A, L = 500 μH,
Csnub = 330 nF, see
Figure 24
Eoff(1)
Turn-off switching losses
VCC = 900V, RG = 10 Ω,
IC = 30 A, L = 500 μH,
Csnub = 330 nF, TJ = 175 °C,
see Figure 24
Min.
Typ.
Max.
-
163
μJ
-
366
-
1. Turn-off losses include also the tail of the collector current.
DocID025269 Rev 2
5/17
Electrical characteristics
2.1
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
GIPD161220131549FSR
Ptot
(W)
VGE ≥ 15V, TJ ≤ 175 °C
Figure 3. Collector current vs. case temperature
GIPD161220131556FSR
IC
(A)
40
VGE ≥ 15V, TJ ≤ 175 °C
250
35
200
30
25
150
20
100
15
10
50
5
0
0
50
25
0
0
75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25°C)
GIPD161220131602FSR
IC
(A)
13V
VGE=15V
70
GIPD161220131620FSR
IC
(A)
VGE=15V
70
60
50
50
11V
75 100 125 150 175 TC(°C)
Figure 5. Output characteristics (TJ = 175°C)
60
40
50
25
13V
40
11V
30
30
20
20
9V
9V
10
0
0
10
2
1
3
4
5
VCE(V)
Figure 6. VCE(sat) vs. junction temperature
GIPD161220131648FSR
VCE(sat)
(V)
VGE= 15V
3.2
IC= 30A
3.0
2
3
5
4
VCE(V)
Figure 7. VCE(sat) vs. collector current
GIPD161220131702FSR
VCE(sat)
(V)
3.2
TJ= 175°C
VGE= 15V
3.0
2.6
2.6
TJ= 25°C
2.4
IC= 15A
2.4
2.2
2.2
2.0
2.0
1.8
IC= 7.5A
1.8
TJ= -40°C
1.6
1.4
1.6
6/17
1
2.8
2.8
1.4
-50
7V
0
0
0
50
100
150
TJ(°C)
1.2
DocID025269 Rev 2
0
5
10
15
20
25
IC(A)
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Figure 8. Forward bias safe operating area
GIPD161220131714FSR
IC
(A)
1 μs
Figure 9. Transfer characteristics
GIPD161220131719FSR
IC
(A)
45
VCE=10V
40
10
35
10 μs
30
25
100 μs
20
1
1 ms
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
15
TJ=175°C
10
TJ=25°C
5
0.1
10
1
1000
100
Figure 10. Diode VF vs. forward current
GIPD161220131729FSR
VF (V)
0
6
VCE(V)
2
9
10
11 VGE(V)
Figure 11. Normalized VGE(th) vs junction
temperature
GIPD281020131600FSR
VGE(th)
(norm)
1.1
TJ= 25°C
1.8
8
7
IC= 1mA
VCE= VGE
1.0
TJ= 175°C
1.6
0.9
1.4
TJ= -40°C
1.2
0.8
1.0
0.7
0.8
0.6
0
20
10
30
40
50
60
Figure 12. Normalized V(BR)CES vs. junction
temperature
GIPD161220131741FSR
V(BR)CES
(norm)
1.04
0.6
-50
70 IF(A)
IC= 2mA
0
50
100
150
TJ(°C)
Figure 13. Capacitance variation
GIPD161220131745FSR
C
(pF)
Cies
1000
1.02
100
0.98
Coes
10
0.94
0.9
-50
0
50
100
150
TJ(°C)
DocID025269 Rev 2
1
0.1
Cres
1
10
100
VCE(V)
7/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
Figure 14. Gate charge vs. gate-emitter voltage
GIPD171220130851FSR
VGE
(V)
IC= 15A
IGE= 1mA
VCC= 960V
16
Figure 15. Switching loss vs collector current
Eoff
(μJ)
1600
GIPD171220130858FSR
VCC = 600V, VGE = 15V,
RG = 10Ω
1200
TJ = 175°C
12
800
8
TJ = 25°C
400
4
0
0
20
40
60
Figure 16. Switching-off loss vs gate resistance
GIPD171220130941FSR
Eoff
(μJ)
1000
0
0
Qg(nC)
10
20
30
IC(A)
Figure 17. Switching-off loss vs temperature
Eoff
(μJ)
VCC = 600V, VGE = 15V,
IC = 15A
GIPD171220130947FSR
VCC= 600V, VGE= 15V,
RG= 10Ω, IC= 15A
800
800
TJ = 175 °C
600
600
200
0
400
TJ = 25 °C
400
10
30
20
40
Figure 18. Switching-off loss vs collectoremitter voltage
Eoff
(μJ)
1200
200
25
RG(Ω)
75
100
125
150
TJ(°C)
Figure 19. Switching times vs. collector current
GIPD171220130956FSR
VGE= 15V,
RG= 10Ω, IC= 15A
t
(ns)
1000
GIPD171220131002FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 600V
tf
TJ= 175°C
800
50
100
600
tdoff
400
TJ= 25°C
200
0
250
8/17
450
650
850
VCE(V)
DocID025269 Rev 2
10
0
5
10
15
20
25
30
IC(A)
STGW20IH125DF, STGWT20IH125DF
Electrical characteristics
Figure 20. Switching times vs. gate resistance
t
(ns)
GIPD171220131047FSR
TJ= 175°C, VGE= 15V,
IC= 15A, VCC= 600V
tf
100
tdoff
10
0
10
20
30
40
RG(Ω)
DocID025269 Rev 2
9/17
Electrical characteristics
STGW20IH125DF, STGWT20IH125DF
Figure 21. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
-4
10
-3
10
-2
10
-1
10
Figure 22. Thermal impedance for diode
10/17
DocID025269 Rev 2
tp (s)
STGW20IH125DF, STGWT20IH125DF
3
Test circuits
Test circuits
Figure 23. Test circuit for inductive load
switching
Figure 24. Test circuit for capacitive load
switching
Csnub
AM01504v1
AM17096v2
Figure 25. Gate charge test circuit
Figure 26. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
Td(on)
Tr(Ion)
Ton
AM01505v1
DocID025269 Rev 2
10%
Td(off)
Tf
Toff
AM01506v1
11/17
Package mechanical data
4
STGW20IH125DF, STGWT20IH125DF
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 27. TO-247 drawing
0075325_G
12/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Package mechanical data
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID025269 Rev 2
5.70
13/17
Package mechanical data
STGW20IH125DF, STGWT20IH125DF
Figure 28. TO-3P drawing
8045950_A
14/17
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Package mechanical data
Table 9. TO-3P mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.60
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1
1.20
b1
1.80
2.20
b2
2.80
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
E
13.90
15.40
15.80
E1
13.60
E2
9.60
e
5.15
5.45
5.75
L
19.50
20
20.50
L1
3.50
L2
18.20
øP
3.10
18.40
18.60
3.30
Q
5
Q1
3.80
DocID025269 Rev 2
15/17
Revision history
5
STGW20IH125DF, STGWT20IH125DF
Revision history
Table 10. Document revision history
16/17
Date
Revision
Changes
13-Jan-2014
1
Initial release.
03-Feb-2014
2
Added VCE(sat) max value in Table 5: Dynamic characteristics.
Minor text changes.
DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
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