STGY80H65DFB, STGW80H65DFB,
STGWT80H65DFB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
1
Max247
2
• Minimized tail current
3
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
TAB
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
2
3
3
2
1
• Very fast soft recovery antiparallel diode
1
TO-247
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGY80H65DFB
GY80H65DFB
Max247
Tube
STGW80H65DFB
GW80H65DFB
TO-247
Tube
STGWT80H65DFB
GWT80H65DFB
TO-3P
Tube
June 2014
This is information on a product in full production.
DocID024366 Rev 5
1/20
www.st.com
20
Contents
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
2/20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1
Max247, STGY80H65DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
TO-247, STGW80H65DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3
TO-3P, STGWT80H65DFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID024366 Rev 5
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
650
V
(1)
IC
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
80
A
ICP(2)
Pulsed collector current
240
A
VGE
Gate-emitter voltage
±20
V
120
(1)
A
IF
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
80
A
IFP(2)
Pulsed forward current
240
A
PTOT
Total dissipation at TC = 25 °C
469
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
120
A
1. Current level is limited by bond wires
2. Pulse width limited by maximum junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.32
°C/W
RthJC
Thermal resistance junction-case diode
0.66
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID024366 Rev 5
3/20
Electrical characteristics
2
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.6
VGE = 15 V, IC = 80 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 80 A
TJ = 175 °C
Forward on-voltage
Max.
650
VGE = 15 V, IC = 80 A
VCE(sat)
Typ.
2
1.8
V
1.9
IF = 80 A
1.9
IF = 80 A TJ = 125 °C
1.6
V
IF = 80 A TJ = 175 °C
1.5
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
2.3
V
7
V
VCE = 650 V
100
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/20
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 80 A,
VGE = 15 V, see Figure 29
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID024366 Rev 5
Min.
Typ.
Max.
Unit
-
10524
-
pF
-
385
-
pF
-
215
-
pF
-
414
-
nC
-
78
-
nC
-
170
-
nC
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
84
-
ns
Current rise time
-
52
-
ns
-
1270
-
A/µs
-
280
-
ns
-
31
-
ns
Turn-on current slope
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
2.1
-
mJ
Eoff(2)
Turn-off switching losses
-
1.5
-
mJ
Total switching losses
-
3.6
-
mJ
Turn-on delay time
-
77
-
ns
Current rise time
-
51
-
ns
Turn-on current slope
-
1270
-
A/µs
-
328
-
ns
-
30
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 80 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
4.4
-
mJ
Eoff(2)
Turn-off switching losses
-
2.1
-
mJ
Total switching losses
-
6.5
-
mJ
Ets
1.
Parameter
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
85
-
ns
-
1105
-
nC
-
26
-
A
-
722
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
267
-
µJ
trr
Reverse recovery time
-
149
-
ns
Qrr
Reverse recovery charge
-
4920
-
nC
Irrm
Reverse recovery current
-
66
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
546
-
A/µs
Err
Reverse recovery energy
-
1172
-
µJ
IF = 80 A, VR = 400 V,
di/dt= 1000 A/µs,
VGE = 15 V,
see Figure 28
IF = 80 A, VR = 400 V,
di/dt= 1000 A/µs,
VGE = 15 V,
TJ = 175 °C, see Figure 28
DocID024366 Rev 5
5/20
Electrical characteristics
2.1
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = 25°C)
GIPD130920131606FSR
IC
(A)
VGE=15V
Figure 3. Output characteristics (TJ = 175°C)
GIPD160920130919FSR
IC
(A)
VGE=15V
11V
140
11V
140
9V
9V
120
120
100
100
80
80
60
60
40
40
20
20
7V
0
2
1
0
4
3
Figure 4. Transfer characteristics
GIPD160920130924FSR
IC
(A)
0
VCE(V)
VCE=10V
2
1
0
3
4
VCE(V)
Figure 5. Collector current vs. case temperature
GIPD160920130941FSR
IC
(A)
VGE = 15 V, TJ = 175 °C
120
140
120
100
25°C
100
80
TJ=175°C
-40°C
80
60
60
40
40
20
20
0
8
7
6
9
Figure 6. Power dissipation vs. case
temperature
GIPD160920130948FSR
Ptot
(W)
450
0
11 VGE(V)
10
VGE = 15 V, TJ = 175 °C
400
0
25
50
75 100 125 150
Figure 7. VCE(sat) vs. junction temperature
VCE(sat)
(V)
2.6
GIPD160920130952FSR
VGE= 15V
2.4
IC= 160A
350
2.2
300
2
250
200
1.8
IC= 80A
150
1.6
100
1.4
50
0
0
6/20
TJ(°C)
25
50
75 100 125 150
TJ(°C)
1.2
-50
DocID024366 Rev 5
IC= 40A
0
50
100
150 TJ(°C)
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Figure 8. VCE(sat) vs. collector current
VCE(sat)
(V)
2.6
GIPD160920131029FSR
Electrical characteristics
Figure 9. Forward bias safe operating area
GIPD160920131115FSR
IC
(A)
VGE= 15V
2.4
100
TJ= 175°C
2.2
TJ= 25°C
10μs
2
1.8
100μs
10
1.6
1.4
1
1.2
1ms
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
TJ= -40°C
1
0.8
0
20
40
60
IC(A)
80 100 120 140
Figure 10. Diode VF vs. forward current
GIPD160920131135FSR
VF
(V)
2.4
0.1
1
10
VCE(V)
100
Figure 11. Normalized V(BR)CES vs. junction
temperature
GIPD160920131144FSR
V(BR)CES
(norm)
-40°C
1.1
2
25°C
1.6
1
TJ= 175°C
IC= 2mA
1.2
0.8
20
40
60
80
100 120 140
Figure 12. Normalized VGE(th) vs. junction
temperature
GIPD160920131151FSR
VGE
(norm)
1.1
0.9
-50
IF(A)
IC= 1mA
0
50
100
150
TJ(°C)
Figure 13. Gate charge vs. gate-emitter voltage
GIPD160920131156FSR
VGE
(V)
16
14
1
IC= 80A
VCC= 520V
12
10
0.9
8
0.8
6
4
0.7
2
0.6
-50
0
50
100
150
TJ(°C)
DocID024366 Rev 5
0
0
100
200
300
400
Qg(nC)
7/20
Electrical characteristics
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Figure 14. Switching loss vs temperature
E
(μJ)
4500
GIPD160920131504FSR
VCC= 400V, VGE = 15V
IC= 80A, Rg= 10Ω
EON
4000
Figure 15. Switching loss vs gate resistance
GIPD160920131208FSR
E
(μJ)
VCC= 400V, VGE = 15V
IC= 80A, TJ= 175°C
5000
3500
4200
3000
3400
EON
2500
EOFF
2600
2000
1000
0
25
50
75 100 125 150 175
TJ(°C)
Figure 16. Switching loss vs collector current
E
(μJ)
EOFF
1800
1500
GIPD160920131436FSR
VCC= 400V, VGE = 15V
RG= 10Ω, TJ= 175°C
1000
2
6
10
14
RG(Ω)
18
Figure 17. Switching loss vs collector emitter
voltage
GIPD160920131524FSR
E
(μJ)
6000
TJ= 175°C, VGE = 15V
IC= 80A, Rg= 10Ω
EON
9000
5000
8000
7000
EON
6000
4000
5000
4000
3000
3000
EOFF
2000
1000
0
0
20
40
60 80 100 120 140 IC(A)
Figure 18. Switching times vs collector current
GIPD160920131533FSR
t
(ns)
EOFF
2000
1000
150 200 250 300 350 400 450
Figure 19. Switching times vs gate resistance
GIPD160920131539FSR
t
(ns)
tdon
tdon
tr
10
1
20
8/20
tdoff
TJ= 175°C, VGE = 15V
VCC= 400V, IC= 80A
tdoff
100
VCE(V)
100
tr
tf
tf
TJ= 175°C, VGE = 15V
VCC= 400V, Rg= 10Ω
40
60
80
100 120 140 IC(A)
DocID024366 Rev 5
10
4
8
12
16
20
Rg(Ω)
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Figure 20. Reverse recovery current vs. diode
current slope
GIPD160920131550FSR
Irm
(A)
VF= 400V,
= 80IFA= 80A
Electrical characteristics
Figure 21. Reverse recovery time vs. diode
current slope
trr
(ns)
GIPD160920131557FSR
VF= 400V, IF= 80A
350
120
300
TJ= 175°C
250
80
200
TJ= 175°C
150
40
100
TJ= 25°C
50
0
0
500 1000
1500 2000 2500 di/dt(A/μs
Figure 22. Reverse recovery charge vs. diode
current slope
Qrr
(nC)
0
0
GIPD160920131602FSR
VF= 400V, IF= 80A
TJ= 25°C
500 1000
1500 2000 2500 di/dt(A/μs
Figure 23. Reverse recovery energy vs. diode
current slope
GIPD160920131610FSR
Err
(μJ)
r
7000
1200
TJ= 175°C
TJ= 175°C
6000
1000
5000
800
VF= 400V, IF= 80A
4000
600
3000
400
2000
200
1000
0
0
TJ= 25°C
500 1000
TJ= 25°C
0
0
1500 2000 2500 di/dt(A/μs
Figure 24. Capacitance variations
1500 2000 2500 di/dt(A/μs
Figure 25. Collector current vs. switching
frequency
GIPD160920131200FSR
C
(pF)
500 1000
GIPD260520141426FSR
Ic [A]
160
10000
Cies
140
120
Tc=80°C
Tc=100 °C
1000
100
Coes
Cres
100
10
0.1
1
10
100
VCE(V)
DocID024366 Rev 5
80
60
40
1
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
10
f [kHz]
9/20
Electrical characteristics
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Figure 26. Thermal impedance for IGBT
ZthTO2T_A
K
d=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
Figure 27. thermal impedance for diode
10/20
DocID024366 Rev 5
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
3
Test circuits
Test circuits
Figure 28. Test circuit for inductive load
switching
Figure 29. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
Figure 30. Switching waveform
AM01505v1
Figure 31. Diode reverse recovery waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ts
tf
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
VRRM
Tf
Toff
dv/dt
AM01506v1
DocID024366 Rev 5
AM01507v1
11/20
Package mechanical data
4
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
12/20
DocID024366 Rev 5
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
4.1
Package mechanical data
Max247, STGY80H65DFB
Figure 32. Max247 drawing
0094330_Rev_D
DocID024366 Rev 5
13/20
Package mechanical data
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Table 8. Max247 mechanical data
mm
Dim.
Min.
14/20
Typ.
Max.
A
4.70
5.30
A1
2.20
2.60
b
1.00
1.40
b1
2.00
2.40
b2
3.00
3.40
c
0.40
0.80
D
19.70
20.30
e
5.35
5.55
E
15.30
15.90
L
14.20
15.20
L1
3.70
4.30
DocID024366 Rev 5
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
4.2
Package mechanical data
TO-247, STGW80H65DFB
Figure 33. TO-247 drawing
0075325_G
DocID024366 Rev 5
15/20
Package mechanical data
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Table 9. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
16/20
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID024366 Rev 5
5.70
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
4.3
Package mechanical data
TO-3P, STGWT80H65DFB
Figure 34. TO-3P drawing
8045950_B
DocID024366 Rev 5
17/20
Package mechanical data
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
Table 10. TO-3P mechanical data
mm
Dim.
18/20
Min.
Typ.
Max.
A
4.60
4.80
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
øP
3.30
3.40
3.50
øP1
3.10
3.20
3.30
Q
4.80
5
5.20
Q1
3.60
3.80
4
DocID024366 Rev 5
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
5
Revision history
Revision history
Table 11. Document revision history
Date
Revision
12-Mar-2013
1
Initial release.
18-Sep-2013
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves)
3
Added device in Max247.
Modified Table 1 accordingly.
Updated Section 4: Package mechanical data.
Minor text changes in cover page.
4
Updated title and description in cover page.
Updated Table 6: IGBT switching characteristics (inductive load),
Table 7: Diode switching characteristics (inductive load), Figure 9:
Forward bias safe operating area and Figure 14: Switching loss vs
temperature.
5
Updated Figure 5: Collector current vs. case temperature, Figure 6:
Power dissipation vs. case temperature, Figure 18: Switching times
vs collector current, Figure 19: Switching times vs gate resistance
and Figure 24: Capacitance variations.
Added Figure 25: Collector current vs. switching frequency.
Updated Section 4: Package mechanical data.
20-Nov-2013
24-Jan-2014
13-Jun-2014
Changes
DocID024366 Rev 5
19/20
STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB
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