STGW40H65FB, STGFW40H65FB,
STGWT40H65FB
Trench gate field-stop IGBT, HB series
650 V, 40 A high speed
Datasheet - production data
Features
• Maximum junction temperature: TJ = 175 °C
1
• High speed switching series
• Minimized tail current
3
2
1
TO-3PF
• Very low saturation voltage: VCE(sat) = 1.6 V
(typ.) @ IC = 40 A
TAB
• Tight parameters distribution
2
3
3
2
1
TO-247
1
• Safe paralleling
• Low thermal resistance
• Lead free package
TO-3P
Figure 1. Internal schematic diagram
Applications
• Photovoltaic inverters
C (2, TAB)
• High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field-stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
G (1)
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW40H65FB
GW40H65FB
TO-247
Tube
STGFW40H65FB
GFW40H65FB
TO-3PF
Tube
STGWT40H65FB
GWT40H65FB
TO-3P
Tube
April 2014
This is information on a product in full production.
DocID025171 Rev 5
1/20
www.st.com
20
Contents
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DocID025171 Rev 5
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-247,
TO-3P
TO-3PF
Collector-emitter voltage (VGE = 0)
650
V
IC
Continuous collector current at TC = 25 °C
80
A
IC
Continuous collector current at TC = 100 °C
40
A
ICP(1)
Pulsed collector current
160
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
VCES
TJ
283
62.5
W
3.5
kV
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-247
TO-3PF
TO-3P
RthJC
Thermal resistance junction-case
RthJA
Thermal resistance junction-ambient
DocID025171 Rev 5
0.53
2.4
50
°C/W
°C/W
3/20
Electrical characteristics
2
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
Unit
V
1.6
VGE = 15 V, IC = 40 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 40 A
TJ = 175 °C
VGE(th)
Max.
650
VGE = 15 V, IC = 40 A
VCE(sat)
Typ.
2.0
1.7
V
1.8
5
6
7
V
VCE = 650 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/20
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 40 A,
VGE = 15 V, see Figure 28
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID025171 Rev 5
Min.
Typ.
Max.
Unit
-
5412
-
pF
-
198
-
pF
-
107
-
pF
-
210
-
nC
-
39
-
nC
-
82
-
nC
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
40
-
ns
Current rise time
-
13
-
ns
-
2413
-
A/µs
142
-
ns
-
27
-
ns
Turn-on current slope
VCE = 400 V, IC = 40 A,
RG = 5 Ω, VGE = 15 V,
see Figure 27
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
498
-
µJ
Eoff(2)
Turn-off switching losses
-
363
-
µJ
Total switching losses
-
861
-
µJ
Turn-on delay time
-
38
-
ns
Current rise time
-
14
-
ns
Turn-on current slope
-
2186
-
A/µs
-
141
-
ns
-
61
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 400 V, IC = 40 A,
RG = 5 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 27
Turn-off delay time
Current fall time
Eon(1)
Turn-on switching losses
-
1417
-
µJ
Eoff(2)
Turn-off switching losses
-
764
-
µJ
Total switching losses
-
2181
-
µJ
Ets
1.
Parameter
Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW40H65DFB.
2. Turn-off losses include a.lso the tail of the collector current.
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5/20
Electrical characteristics
2.1
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P
AM16054v1
Ptot
(W)
VGE =15 V, TJ = 175 °C
Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
AM16053v1
IC
(A)
VGE = 15 V
250
TJ = 175 °C
80
200
60
150
40
100
20
50
0
0
25
50
75
100 125 150
Figure 4. Power dissipation vs. case
temperature for TO-3PF
AM16054v4
Ptot
(W)
0
0
TC(°C)
VGE =15 V, TJ = 175 °C
25
75
50
100 125 150
TC(°C)
Figure 5. Collector current vs. case temperature
for TO-3PF
AM16053v4
IC
(A)
VGE =15 V, TJ = 175 °C
60
30
50
40
20
30
20
10
10
0
0
25
50
75
100
125
Figure 6. Output characteristics (TJ = 25°C)
IC
(A)
AM16050v1
VGE =15 V
0
0
TC(°C)
25
50
75
100 125
TC(°C)
Figure 7. Output characteristics (TJ = 175°C)
AM16051v1
IC
(A)
VGE =15V
11V
11V
120
120
9V
9V
80
80
40
40
7V
0
0
6/20
1
2
3
4
VCE(V)
DocID025171 Rev 5
0
0
1
2
3
4
VCE(V)
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Figure 8. VCE(sat) vs. junction temperature
AM16055v1
VCE(sat)
(V)
VGE= 15V
Electrical characteristics
Figure 9. VCE(sat) vs. collector current
VCE(sat)
(V)
AM16056v1
TJ= 175°C
VGE= 15V
2.3
2.3
IC= 80A
2.1
2.1
TJ= 25°C
1.9
IC= 40A
1.9
1.7
1.7
IC= 20A
1.5
1.3
-50
TJ= -40°C
1.5
1.3
0
50
100
Figure 10. Collector current vs. switching
frequency for TO-247 and TO-3P
GIPG110420141030FSR
Ic [A]
1.1
10
150 TJ(°C)
30
70 IC(A)
50
Figure 11. Collector current vs. switching
frequency for TO-3PF
GIPG110420141035FSR
Ic [A]
20
Tc=80°C
Tc=80°C
80
15
Tc=100 °C
Tc=100 °C
60
10
40
5
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=4.7 Ω,
VGE = 0/15 V, TJ =175°C)
20
1
0
1
f [kHz]
10
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=4.7 Ω,
VGE = 0/15 V, TJ =175°C)
f [kHz]
10
Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for
TO-247 and TO-3P
TO-3PF
AM16057v1
IC
(A)
100
*,3*)65
,&
$
10 μs
10
100 μs
—V
—V
1 ms
1
0.1
1
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
10
100
VCE(V)
DocID025171 Rev 5
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7F ƒ&7 -”ƒ&
9*( 9
PV
9&(9
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Electrical characteristics
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Figure 14. Transfer characteristics
Figure 15. Normalized VGE(th) vs junction
temperature
AM16052v1
IC
(A)
AM16060v1
VGE(th)
(norm)
VCE = VGE, IC = 1 mA
VCE= 5 V
120
1.0
0.9
80
0.8
40
0
TJ = -40°C
TJ = 25°C
TJ =175°C
8
7
6
9
10
0.7
Figure 16. Normalized V(BR)CES vs. junction
temperature
AM16059v1
V(BR)CES
0.6
-50
VGE(V)
0
50
100
150
TJ(°C)
Figure 17. Capacitance variation
AM16071v1
C(pF)
(norm)
1.1
Cies
IC= 2 mA
1000
1.0
100
Coes
Cres
0.9
-50
0
50
100
150
Figure 18. Gate charge vs. gate-emitter voltage
AM16061v1
VGE
(V)
10
0.1
TJ(°C)
VCC= 520V, IC= 40A
Ig= 1mA
10
VCE(V)
100
Figure 19. Switching loss vs collector current
AM16064v1
E (μJ)
1800
14
1
IC= 40A, VGE= 15V
Rg= 10Ω, TJ= 175°C
EON
12
1400
10
8
1000
6
EOFF
4
600
2
0
8/20
0
50
100
150
200
Qg(nC)
DocID025171 Rev 5
200
150
250
350
450
VCE(V)
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Figure 20. Switching loss vs gate resistance
AM16067v2
E(μJ)
TJ= 175°C, VGE= 15V
IC= 40A, VCC= 400V
Electrical characteristics
Figure 21. Switching loss vs temperature
E (μJ)
1650
AM16063v1
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 40A
EON
1800
EON
1250
1400
850
1000
EOFF
450
EOFF
600
0
4
6
8
16
20
Figure 22. Switching loss vs collector-emitter
voltage
AM16064v1
E (μJ)
1800
50
-40 -15
Rg(Ω)
10
60 85
TJ(°C)
110 135
Figure 23. Switching times vs. collector current
AM16066v1
t(ns)
EON
IC= 40A, VGE= 15V
Rg= 10Ω, TJ= 175°C
35
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
tdoff
1400
100
tf
1000
tdon
EOFF
600
tr
200
150
250
350
VCE(V)
450
10
10
20
30
40
50
60
70
IC(A)
Figure 24. Switching times vs. gate resistance
AM16067v1
t(ns)
TJ= 175°C, VGE= 15V
IC= 40A, VCC= 400V
100
tdoff
tf
tdon
tr
10
0
4
6
8
16
20
Rg(Ω)
DocID025171 Rev 5
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Electrical characteristics
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Figure 25. Thermal impedance for TO-247 and TO-3P
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10/20
-4
10
-3
10
DocID025171 Rev 5
-2
10
-1
10
tp (s)
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Electrical characteristics
Figure 26. Thermal impedance for TO-3PF
ZthTO2T_A
K
d=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-5
10-4
10-3
DocID025171 Rev 5
10-2
10-1
tp (s)
11/20
Test circuits
3
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Test circuits
Figure 27. Test circuit for inductive load
switching
Figure 28. Gate charge test circuit
AM01504v1
Figure 29. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
90%
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
Tf
Toff
AM01506v1
12/20
DocID025171 Rev 5
AM01505v1
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247, STGW40H65FB
Figure 30. TO-247 drawing
0075325_G
DocID025171 Rev 5
13/20
Package mechanical data
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Table 7. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
14/20
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID025171 Rev 5
5.70
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
4.2
Package mechanical data
TO-3PF, STGFW40H65FB
Figure 31. TO-3PF drawing
7627132_D
DocID025171 Rev 5
15/20
Package mechanical data
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Table 8. TO-3PF mechanical data
mm
Dim.
Min.
Typ.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
16/20
Max.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10
DocID025171 Rev 5
10.20
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
4.3
Package mechanical data
TO-3P, STGWT40H65FB
Figure 32. TO-3P drawing
8045950_A
DocID025171 Rev 5
17/20
Package mechanical data
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
Table 9. TO-3P mechanical data
mm
Dim.
Min.
Typ.
A
4.60
5
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1
1.20
b1
1.80
2.20
b2
2.80
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
E
13.90
15.40
15.80
E1
13.60
E2
9.60
e
5.15
5.45
5.75
L
19.50
20
20.50
L1
18/20
Max.
3.50
L2
18.20
øP
3.10
18.40
18.60
3.30
Q
5
Q1
3.80
DocID025171 Rev 5
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
5
Revision history
Revision history
Document
Table 10. Document revision history
Date
Revision
Changes
30-Aug-2013
1
Initial release.
11-Sep-2013
2
Document status changed from preliminary to production data.
Inserted Section 2.1: Electrical characteristics (curves).
28-Feb-2014
3
Updated title and description in cover page.
05-Mar-2014
4
Updated units in Table 6: Switching characteristics (inductive load).
11-Apr-2014
5
Added part number and references for the device in a TO-3PF
package
DocID025171 Rev 5
19/20
STGW40H65FB, STGFW40H65FB, STGWT40H65FB
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