NGTB40N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
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40 A, 1350 V
VCEsat = 2.40 V
Eoff = 1.30 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1350
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse,
VGE = 15 V
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 0 V
IFM
120
A
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
80
40
G
120
A
A
80
40
January, 2014 − Rev. 1
TO−247
CASE 340AL
E
MARKING DIAGRAM
40N135IHR
AYWWG
W
394
197
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2014
C
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTB40N135IHRWG
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB40N135IHR/D
NGTB40N135IHRWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.385
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1350
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.40
2.80
2.70
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1350 V
VGE = 0 V, VCE = 1350 V, TJ = 175°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
5290
−
pF
Coes
−
124
−
Cres
−
100
−
Gate charge total
Qg
−
234
−
Gate to emitter charge
Qge
−
39
−
Qgc
−
105
−
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(off)
−
250
−
tf
−
130
−
Eoff
−
1.30
−
mJ
TJ = 150°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(off)
−
260
−
ns
tf
−
190
−
Eoff
−
2.60
−
mJ
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
VF
−
−
2.30
3.70
2.70
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
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2
NGTB40N135IHRWG
TYPICAL CHARACTERISTICS
250
TJ = 25°C
13 V
VGE = 20 to 15 V
200
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
250
11 V
150
10 V
100
9V
50
0
8V
1
2
3
4
6
5
7
11 V
10 V
100
9V
50
8V
7V
0
8
0
1
2
3
4
6
5
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
160
13 V
11 V
IC, COLLECTOR CURRENT (A)
VGE = 20 to 15 V
200
10 V
150
100
9V
50
0
0
1
7V
8V
TJ = −40°C
2
3
4
5
6
7
140
TJ = 25°C
120
100
TJ = 150°C
80
60
40
20
0
8
0
1
2
3
4
5
6
7
8
9 10
11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.50
100000
4.00
IC = 80 A
3.50
3.00
IC = 40 A
2.50
IC = 20 A
2.00
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
13 V
150
250
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 to 15 V
200
7V
0
TJ = 150°C
10000
Cies
1000
Coes
100
Cres
10
0.50
0.00
−75 −50 −25
0
25
50
75
1
100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB40N135IHRWG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
40
TJ = 25°C
30
20
TJ = 150°C
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
8
6
4
VCE = 600 V
VGE = 15 V
IC = 40 A
2
0
0
50
100
200
150
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
250
1000
2
td(off)
Eoff
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
10
VF, FORWARD VOLTAGE (V)
1.5
1
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0.5
0
20
40
60
80
100
120
140
10
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0
40
60
80
100
120
140
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
Eoff
3
2
td(off)
tf
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
0
20
160
1000
4
5
20
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ns)
5
tf
TJ, JUNCTION TEMPERATURE (°C)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
6
100
1
160
7
SWITCHING LOSS (mJ)
12
4.0
2.5
0
14
35
50
65
10
80
5
20
35
50
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
80
NGTB40N135IHRWG
TYPICAL CHARACTERISTICS
10000
4
Eoff
3
2.5
2
1.5
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
1
0.5
0
5
15
25
35
45
55
65
75
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
3.5
td(off)
1000
tf
100
10
85
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
5
15
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
3.5
85
1000
Eoff
2.5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
3
2
1.5
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
0.5
td(off)
tf
100
IC = 40 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
0
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1 ms
100 ms
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1000
100
50 ms
dc operation
10
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
1
10
250 300 350 400 450 500 550 600 650 700 750 800
10
100
VGE = 15 V, TC = 125°C
100
10
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB40N135IHRWG
TYPICAL CHARACTERISTICS
140
1650
120
1600
TC = 80°C
80
1550
V(BR)CES (V)
Ipk (A)
100
TC = 110°C
60
40
20
1500
1450
1400
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
(as noted), D = 0.5
0
0.01
0.1
1
10
1350
100
1300
−40
1000
−15
10
35
60
85
110
135
FREQUENCY (kHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
1
RqJC = 0.385
50% Duty Cycle
Ri (°C/W)
R(t) (°C/W)
0.1 20%
Junction R1
10%
5%
0.01
Rn
C2
Cn
Ci = ti/Ri
2%
C1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
R2
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
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6
0.1
Case
ti (sec)
0.005757 0.000174
0.000122 0.025884
0.007153 0.001398
0.010643 0.002971
0.016539 0.006046
0.048615 0.006505
0.019522 0.051225
0.015924 0.198582
0.051783 0.193115
0.025689 1.23097
0.180713 0.553364
1
10
NGTB40N135IHRWG
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB40N135IHRWG
Figure 23. Definition of Turn On Waveform
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8
NGTB40N135IHRWG
Figure 24. Definition of Turn Off Waveform
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9
NGTB40N135IHRWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
D
0.635
Q
2
B A
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
NOTE 6
S
NOTE 3
1
M
P
A
E2
NOTE 4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB40N135IHR/D