NGTB15N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
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15 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.34 mJ
Features
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
60
A
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
$25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
30
15
G
60
A
C
TO−247
CASE 340AL
E
A
30
15
MARKING DIAGRAM
15N120IHR
AYWWG
W
333
166
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB15N120IHRWG
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB15N120IHR/D
NGTB15N120IHRWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case
Rating
RqJC
0.45
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 15 A, TJ = 175°C
VCEsat
−
−
2.10
2.30
2.50
−
V
Gate−emitter threshold voltage
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
ICES
−
−
0.1
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
3690
−
pF
Coes
−
85
−
Cres
−
69
−
Gate charge total
Qg
−
160
−
Gate to emitter charge
Qge
−
27
−
Qgc
−
70
−
TJ = 25°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
170
−
tf
−
177
−
Eoff
−
0.34
−
mJ
TJ = 150°C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
190
−
ns
tf
−
255
−
Eoff
−
0.74
−
mJ
VGE = 0 V, IF = 15 A, TJ = 25°C
VGE = 0 V, IF = 15 A, TJ = 175°C
VF
−
−
1.75
2.50
2.0
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 10 kHz
Reverse transfer capacitance
VCE = 600 V, IC = 15 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
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NGTB15N120IHRWG
TYPICAL CHARACTERISTICS
50
60
TJ = 25°C
VGE = 10 V
to 20 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
60
9V
40
30
8V
20
10
0
7V
0
1
2
3
4
5
7
6
30
8V
20
7V
10
0
1
2
3
4
5
7
6
Figure 2. Output Characteristics
IC, COLLECTOR CURRENT (A)
9V
30
20
8V
10
7V
1
2
3
4
5
7
6
8
60
TJ = −40°C
50
40
30
TJ = 150°C
20
TJ = 25°C
10
0
8
0
1
2
3
4
6
5
7
8
9
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
10000
IC = 30 A
10
Cies
2.50
IC = 15 A
2.00
IC = 5 A
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
40
Figure 1. Output Characteristics
VGE = 10 V
to 20 V
0
TJ = 150°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
40
0
9V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
60
50
50
0
8
VGE = 10 V
to 20 V
1000
100
Coes
Cres
10
0.50
0.00
−75 −50 −25
0
25
50
1
75 100 125 150 175 200
TJ = 25°C
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
90 100
NGTB15N120IHRWG
TYPICAL CHARACTERISTICS
16
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
60
50
TJ = 25°C
40
30
20
10
0
TJ = 150°C
0
0.5
1.0
1.5
2.0
2.5
3.0
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 15 A
2
0
0
50
75
100
125
150
175
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
1000
Eoff
0.5
0.4
0.3
0.2
200
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
SWITCHING TIME (ns)
0.6
25
VF, FORWARD VOLTAGE (V)
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
0.7
td(off)
tf
0.1
0
0
1.8
20
40
60
80
100
1.4
1.2
140
100
160
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.6
120
Eoff
1.0
0.8
0.6
0.4
160
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
VCE = 600 V
12
Figure 7. Diode Forward Characteristics
0.8
SWITCHING LOSS (mJ)
14
td(off)
tf
0.2
0
5
10
15
20
25
30
35
100
40
5
10
15
20
25
30
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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35
40
NGTB15N120IHRWG
TYPICAL CHARACTERISTICS
1.6
1000
1.2
1.0
Eoff
0.8
0.6
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 15 A
0.4
0.2
0
5
15
25
35
45
55
65
75
td(off)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.4
tf
100
5
85
45
55
65
Figure 14. Switching Time vs. Rg
75
85
1000
VCE = 600 V
TJ = 150°C
IC = 15 A
Rg = 10 W
0.8
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
35
Figure 13. Switching Loss vs. Rg
0.9
Eoff
0.7
0.6
0.5
0.4
VCE = 600 V
TJ = 150°C
IC = 15 A
Rg = 10 W
0.3
0.2
0.1
0
350
400
450
500
550
600 650
700
750
td(off)
tf
100
350
800
400
450
500
550
600 650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
25
Rg, GATE RESISTOR (W)
1.0
50 ms
100 ms
10
dc operation
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
15
Rg, GATE RESISTOR (W)
1
10
100
100
10
1
1000
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB15N120IHRWG
TYPICAL CHARACTERISTICS
1550
70
1500
60
TC = 110°C
1450
V(BR)CES (V)
Ipk (A)
50
TC = 80°C
40
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
30 V = 0/15 V, T
GE
case = 80°C or 110°C
(as noted), D = 0.5
20
1400
1350
1300
1250
10
0
0.01
0.1
1
10
100
1200
−40
1000
−15
10
35
60
85
110
135
FREQUENCY (kHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Collector Current vs. Switching
Frequency
Figure 20. Typical V(BR)CES vs. Temperature
SQUARE−WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
0.1
0.01
RqJA = 0.446
20%
10%
R1
Junction
5%
R2
Rn
Case
2%
C1
0.001
0.0001
1E−06
Ci (J/°C)
0.08113
0.118279
0.115034
0.130170
0.001355
0.003898
0.008455
0.027490
0.076823
73.79876
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
1E−05
Cn
C2
Ri (°C/W)
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 21. IGBT Transient Thermal Impedance
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6
0.1
1
NGTB15N120IHRWG
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB15N120IHRWG
Figure 23. Definition of Turn On Waveform
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8
NGTB15N120IHRWG
Figure 24. Definition of Turn Off Waveform
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9
NGTB15N120IHRWG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
SEATING
PLANE
A
Q
E2
NOTE 4
D
0.635
2
B A
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
NOTE 6
S
NOTE 3
1
M
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTB15N120IHR/D