IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
1
Packagepindefinition:
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
IGW15N120H3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
1200V
15A
2.05V
175°C
G15H1203
PG-TO247-3
2
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
30.0
15.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
60.0
A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C
-
60.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
217.0
105.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
10
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.70
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
1200
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
2.05
2.50
2.70
2.40
-
Gate-emitter threshold voltage
VGE(th)
IC=0.50mA,VCE=VGE
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
600
nA
Transconductance
gfs
VCE=20V,IC=15.0A
-
7.5
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
4
V
V
V
250.0 µA
2500.0
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
875
-
-
60
-
-
45
-
VCC=960V,IC=15.0A,
VGE=15V
-
75.0
-
nC
VGE=15.0V,VCC≤600V,
tSC≤10µs
Tvj=175°C
-
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
52
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
21
-
ns
-
34
-
ns
-
260
-
ns
-
14
-
ns
-
1.10
-
mJ
-
0.45
-
mJ
-
1.55
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=35.0Ω,RG(off)=35.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW15N120H3) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
19
-
ns
-
30
-
ns
-
327
-
ns
-
43
-
ns
-
1.60
-
mJ
-
0.90
-
mJ
-
2.50
-
mJ
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=35.0Ω,RG(off)=35.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW15N120H3) reverse
recovery.
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Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
70
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
60
50
40
TC=80°
TC=110°
30
TC=80°
TC=110°
20
tp=1µs
10
10µs
50µs
100µs
200µs
500µs
1
DC
10
0
1
10
100
0.1
1000
1
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=35Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
250
30
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
200
150
100
20
10
50
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
6
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
60
45
VGE=20V
VGE=20V
17V
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
60
15V
13V
11V
9V
30
7V
5V
15
0
0
2
4
45
13V
11V
9V
30
7V
5V
15
0
6
15V
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
6
8
5.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
IC,COLLECTORCURRENT[A]
4
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
60
45
30
15
0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
15
VGE,GATE-EMITTERVOLTAGE[V]
IC=7.5A
IC=15A
IC=30A
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
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Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
1000
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
0
5
10
15
20
25
100
10
30
10
30
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E)
90
110
7
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
70
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
1000
100
10
50
rG,GATERESISTOR[Ω]
25
50
75
100
125
150
typ.
min.
max.
6
5
4
3
2
175
Tj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
8
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
7
5
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
6
Eoff
Eon
Ets
5
4
3
2
4
3
2
1
1
0
0
5
10
15
20
25
0
30
10
30
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=35Ω,testcircuitinFig.E)
70
90
110
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=15A,testcircuitinFig.E)
2.5
3.5
Eoff
Eon
Ets
3.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
50
rG,GATERESISTOR[Ω]
2.0
1.5
1.0
0.5
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
0.0
400
175
Tj,JUNCTIONTEMPERATURE[°C]
500
600
700
800
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=600V,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=15A,
rG=35Ω,testcircuitinFig.E)
9
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
16
240V
960V
14
12
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
1000
10
8
6
Cies
Coes
Cres
100
4
2
0
0
10
20
30
40
50
60
70
10
80
0
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=15A)
30
50
80
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
20
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
90
70
60
50
40
30
20
10
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
12
14
16
40
30
20
10
0
18
VGE,GATE-EMITTERVOLTAGE[V]
10
12
14
16
18
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤600V,startatTj=25°C)
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤600V,startatTj≤150°C)
10
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763
0.015225
τi[s]:
1.6E-5 3.0E-4
2.9E-3
0.01490178 0.1582781
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
11
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
PG-TO247-3
12
Rev.2.1,2014-12-01
IGW15N120H3
Highspeedswitchingseriesthirdgeneration
vGE(t)
I,V
90% VGE
dIF/dt
a
a
10% VGE
b
b
t
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
vGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Ls,
relief capacitor Cr,
(only for ZVT switching)
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
13
Rev.2.1,2014-12-01
IGW15N120H3
High speed switching series third generation
Revision History
IGW15N120H3
Revision: 2014-12-01, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2009-11-27
-
2.1
2014-12-01
Final data sheet
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
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14
Rev. 2.1, 2014-12-01