The Role of Electron-Electron Interactions in Moderately Doped Nanostructures A.B. DUBOIS, R.V. LYSOV Mathematical Department Ryazan Institute of Open Education 2 Bronnaya Str., Ryazan, 390010 RUSSIA Abstract: - The report is aimed at clarifying the contribution of intrasubband and intersubband electron – electron interactions to Landau quantization damping of transverse magnitoresistance oscillations. Expressions are derived for the time of electron-electron interaction, matrix elements of the full screening potential and dynamic dielectric function in a 2D electron system. The calculated dependences provide a good description of the experimental times of Landau levels collisional broadening. Key-Words: - Nanostructures, Dynamic dielectric function, 2D electron system 1 Introduction q, in the approximation far from the long Starting from the pioneering works [1] and up to the present time [2-4] the electron interactions are the subject of ever growing interest because of their important role in kinetic phenomena. Also known are the anomalies in the low-temperature magnitotransport arising when 2D electrons fill several size-quantized subbands. In particular, authors of Ref. [5] predicted non-monotonous behavior of kinetic coefficients as the density of 2D electrons is changed and several sizequantized subbands in a 2D system are filled. When the doping level of the AlxGa1 x As( Si) / GaAs nanostructure is high wave limit are calculated. enough for concentration ns to reach 2 8 10 cm , the quantum well contains two size11 quantized subbands. In present paper we report the results of the study of electron-electron processes in a system of highly degenerate 2D electrons with the fine structure of energy spectrum and the electron density spatial distribution. Expressions for the times of eeintra and electron-electron intrasubband intersubband eeinter interaction are derived and matrix elements of the full screening potential Vtot q, and dynamic dielectric function for 2 Theory Interactions of Electron-Electron One of the important points in the derivation of expression for eeintra and eeinter is the calculation of the full screening potential matrix elements which, within the perturbation theory approach, implies the transformation of the potential V r, t into Vtot q, . To within the second order in external potential Vtot q, in the perturbation theory expansion, the time required for the e-e interaction to change the state k p into k q p q is given by a well-known expression 1 iee d V ijkl tot (q, ) 2 jkl k,p,q Ek k q El p - q Ei k Ei p fk fp 1 fk q 1 fp-q (1) Where indices i, j, k, l run over the set consisting of symbols m (first subband of dimensional quantization) and n, d (second subband of dimensional quantization) which label the electron transition type. When performing summation over k and p we transform (1) to 1 d 2kBT (2) ijkl V q , q , q , tot ik ik ee ch 2 2 i , j ,k ,m q Vtotijkl q, Ej 2d m S q 2 e2 q 4 ik q, ns ,i (T , nn , nm , ni , d m , di ) 2 q 2 ns ,i q q q 2 n 2 n s ,i s ,i m ns ,i q m ns ,i q 2 1/ 2 2 1/ 2 (3) *2 E m S P n T T , ns 16 d m2 4 ns2 (4) while for the third type 1 inter 2 in Eq. (5) are e 2 1/ 2 2 k BTm* 0 nm nd nn nm nd nn 1 et t dt with zeta-function (T , nm , ni , dm , di ) are rather sensitive to the electron concentration in the sizequantized subbands. For example, for 11 2 nm 8 10 cm ... nd 0.1nm , … nn 0.1nd , d p / d m 3.5 the factor (T , nn , nm , ni , dm , di ) in Eq. (5) results only in some smoothening of the non-monotonous behavior while at 11 2 1 nm 8 10 cm the curve ee T does not 3 Results and Discussion (5) W n T T , ns 8 where Q n T , P n T , W n T - polynomials 3/ 2 t 4 En Em 2 Q n T T , ns 8 En Em dm dm dn dm d d m p dm d p contain any non-monotonous parts at all. m*2 S 16 6 d n d p ee1 T is of The products of Q n T , P n T and W n T c.c. In the form convenient for calculations the relaxation times for intrasubband transitions are written as 2 m 5 behavior zeta-function 3 ik q, (T , nm , ni , dm , di ) . determined by the uniformly converging sums Q n T , Pn T and Wn T multiplied by the and dielectric function 1 zeta-function Non-monotonous with matrix elements intra B1 B2 B3 ..., T T2 T3 B B B Q n (T ) 1 22 33 ..., T T T B B W n (T ) 22 44 ..., T T with the coefficients Bn defined by the Riemann P n (T ) Presented for comparison in Figs. 1a and 1b are the calculated and experimentally measured curves for several nanostructure samples where 2D electrons are certainly known to fill only the lowest size- quantized subband ns 8 1011 cm 2 (see Refs. [6,7] for the details of the analysis of the experiment). takes place the second – subband electrons are in the state close to the quantum limit and one can only speak of the oscillations period in a rather limited sense. Fig.1a Fig.1b Comparison of calculated and experimental (taken from [6]) curves for different values of subband electron density: ns ,1011 cm -2 : 1,4-8.5; 2,5-6.9; 3,6-6.3. 4 Conclusion In conclusion, It should be noted that a similar problem for 2D electrons seems to have been considered in [8] and since then numerous attempts have been undertaken [9-11] to study this problem for 2D electron system where several size-quantized subbands are filled at T 0 in the long wavelength limit. However, the plasma oscillation spectrum has not been obtained in any of these works. Characteristic features of 2D electron systems, such as the amplitude – frequency modulation, beatings, and sharp bends in the oscillation, and sharp bends in the oscillation amplitude magnetic field dependence make the description of Landau quantization damping in terms of the Dingle temperature rather problematic. Another point to be pointed out is the fact that in the magnetic field range where a strong amplitude – frequency modulation References: [1] A.A.Abrikosov, L.P.Gor`kov, I.E. Dzyaloshinskii, Methods of Quantum Field Theory in Statistical Physics, Moscow, GIFML, 1962 [2] V.F. Gantmakher and I.B. Levinson, Scattering of charge carriers in metals and semiconductors. Moscow, “Nauka”, 1984 [3] M.Slutzky, O.Entin–Wohlman, Y.Berk and A. Palevsky Electron-electron scattering in coupled quantum wells, Physical Review B, Vol. 53, No.7, 1996, T 4065 [4] M.A. Herman, D. Bimberg, J. Cristen Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques, Journal of Applied Physics, Vol. 70, No.2, 1991, P. 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