AO4453
12V P-Channel MOSFET
General Description
Product Summary
The AO4453 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-4.5V)
-12V
-9A
VDS
RDS(ON) (at VGS =-4.5V)
< 19mΩ
RDS(ON) (at VGS =-3.3V)
< 22mΩ
RDS(ON) (at VGS =-2.5V)
< 26mΩ
RDS(ON) (at VGS =-1.8V)
< 36mΩ
RDS(ON) (at VGS =-1.5V)
< 50mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±8
V
-9
ID
TA=70°C
Maximum
-12
-7
A
Pulsed Drain Current C
IDM
-55
Avalanche Current C
IAS
20
A
Avalanche energy L=0.1mH C
TA=25°C
EAS
20
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Oct. 2012
2.5
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.6
RθJA
RθJL
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-55 to 150
Typ
42
70
20
°C
Max
50
85
30
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4453
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-55
TJ=55°C
-5
nA
-0.9
V
15
19
19.5
25
VGS=-3.3V, ID=-7A
17
22
mΩ
VGS=-2.5V, ID=-6A
20
26
mΩ
VGS=-1.8V, ID=-4A
27
36
mΩ
VGS=-1.5V, ID=-1A
33
50
mΩ
-1
V
-3.5
A
A
gFS
Forward Transconductance
VDS=-5V, ID=-9A
-33
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.6
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
TJ=125°C
Coss
Units
-0.6
VGS=-4.5V, ID=-9A
Static Drain-Source On-Resistance
Max
V
VDS=-12V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-6V, f=1MHz
S
1370
pF
350
pF
258
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=-4.5V, VDS=-6V, ID=-9A
mΩ
pF
10
20
Ω
12.7
18
nC
Qgs
Gate Source Charge
1.7
nC
Qgd
Gate Drain Charge
3.4
nC
tD(on)
Turn-On DelayTime
11
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-4.5V, VDS=-6V, RL=0.67Ω,
RGEN=3Ω
70
ns
41.5
ns
IF=-9A, dI/dt=100A/µs
20.7
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
5.2
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2012
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Page 2 of 6
AO4453
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
20
-4.5V
VDS=-5V
30
-3V
15
-2V
20
-2.5V
-ID(A)
-ID (A)
25
15
10
10
5
VGS=-1.5V
5
25°C
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.6
40
Normalized On-Resistance
60
RDS(ON) (mΩ
Ω)
125°C
VGS=-1.5.V
VGS=-1.8V
VGS=-2.5V
20
VGS=-3.3V
VGS=-4.5V
0
VGS=-4.5V
ID=-9A
1.4
VGS=-2.5V
ID=-6A
VGS=-3.3V
ID=-7A
17
1.2
VGS=-1.8V
5
ID=-4A
2
10
1
VGS=-1.5V
ID=-1A
0.8
0
3
6
9
12
15
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
1.0E+02
ID=-9A
1.0E+01
40
40
125°C
30
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
20
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
10
1.0E-04
1.0E-05
0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4453
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
2400
VDS=-6V
ID=-9A
2000
Capacitance (pF)
-VGS (Volts)
4
3
2
1
Ciss
1600
1200
Coss
800
400
0
Crss
0
0
3
6
9
12
15
0
2
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
8
10
12
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
1000
10µs
100µs
10.0
TA=25°C
100
TA=100°C
-ID (Amps)
-IAR (A) Peak Avalanche Current
4
TA=150°C
10
RDS(ON)
limited
1.0
0.1
TA=125°C
0.0
0.01
1
1
10
100
1ms
10ms
0.1
1
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability
C)
10s
DC
TJ(Max)=150°C
TA=25°C
10
100
-VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
(Note
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: Oct. 2012
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Page 4 of 6
AO4453
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2012
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Page 5 of 6
AO4453
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: Oct. 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6