AOK20B120E1
1200V, 20A Alpha IGBT
General Description
• Latest AlphaIGBT (α IGBT) technology
• Best in Class VCE(SAT) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
• High surge current capability
• Minimal gate spike due to high input capacitance
TM
with Diode
Product Summary
VCE
IC (TC=100°C)
1200V
20A
VCE(sat) (TC=25°C)
1.68V
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
TO-247
C
G
AOK20B120E1
Orderable Part Number
G
C
E
E
Package Type
AOK20B120E1
TO247
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
V CE
Collector-Emitter Voltage
Gate-Emitter Voltage
V GE
Continuous Collector TC=25°C
Current
TC=100°C
IC
Form
Tube
Minimum Order Quantity
240
AOK20B120E1
1200
Units
V
±30
40
V
20
A
Pulsed Collector Current, Limited by TJmax
Non repetitive peak collector currentA
I Cpulse
80
A
I CSM
200
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
80
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
40
IF
20
I Fpulse
80
333
PD
167
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
A
A
W
-55 to 175
°C
300
°C
AOK20B120E1
40
0.45
Units
°C/W
°C/W
1.6
°C/W
Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs
Rev.1.0: March 2015
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Page 1 of 8
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
VF
V GE(th)
Collector-Emitter Saturation Voltage
Conditions
Min
IC=1mA, VGE=0V, TJ=25°C
TJ=25°C
VGE=15V, IC=20A
TJ=125°C
1200
-
VGE=0V, IC=20A
Diode Forward Voltage
I GES
g FS
Zero Gate Voltage Collector Current
Gate-Emitter leakage current
Forward Transconductance
VCE=1200V, VGE=0V
Units
-
-
V
1.68
2.1
-
2
-
-
2.2
-
TJ=25°C
-
1.6
2
TJ=125°C
-
1.68
TJ=175°C
-
1.7
-
4.5
5.15
5.8
-
-
10
TJ=25°C
I CES
Max
TJ=175°C
VCE=5V, IC=1mA
Gate-Emitter Threshold Voltage
Typ
V
V
TJ=125°C
-
-
500
TJ=175°C
-
-
5000
V
µA
VCE=0V, VGE=±30V
-
-
±100
VCE=20V, IC=20A
-
23
-
nA
S
-
1620
-
pF
-
90
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
28
-
pF
Qg
Total Gate Charge
-
60.5
-
nC
Q ge
Gate to Emitter Charge
-
14.5
-
nC
Q gc
Gate to Collector Charge
-
28
-
nC
Rg
Gate resistance
-
2.1
-
Ω
-
134
-
ns
-
98
-
ns
-
0.83
-
mJ
-
155
-
ns
-
184
-
ns
-
1.37
-
mJ
VGE=15V, VCE=960V, IC=20A
VGE=0V, VCE=0V, f=1MHz
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
TJ=25°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
TJ=175°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2015
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Page 2 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
200
20V
20V
120
17V
17V
100
IC (A)
IC (A)
150
13V
15V
11V
90
15V
13V
9V
50
0
1
30
9V
VGE= 7V
0
VGE=7V
0
2
3
4
5
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
6
0
7
1
2
3
4
5
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
VCE=20V
IF (A)
IC (A)
7
-40°C
80
60
40
175°C
20
-40°C
0
4
60
25°C
40
175°C
20
25°C
7
0
10
13
0.5
VGE(V)
Fig 3: Transfer Characteristic
1.0
1.5
2.0
2.5
3.0
3.5
4.0
150
175
VF (V)
Fig 4: Diode Characteristic
7
5
4
6
IC=40A
VGE(TH)(V)
VCE(sat) (V)
6
100
80
3
IC=20A
2
1
5
4
3
IC=10A
0
2
0
25
50
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: March 2015
11V
60
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0
25
50
75
100
125
TJ (°C)
Figure 6: VGE(TH) vs. Tj
Page 3 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
Cies
1000
9
Capacitance (pF)
VGE(V)
10000
VCE=960V
IC=20A
6
3
Coes
100
10
Cres
1
0
0
10
20
30
40
50
60
Qg(nC)
Fig 7: Gate-Charge Characteristics
0
70
5
10
15
20
25
30
VCE(V)
Fig 8: Capacitance Characteristic
35
40
350
300
Power Disspation (W)
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
60
50
Current rating IC(A)
40
30
20
10
0
25
Rev.1.0: March 2015
50
75
100
125
150
TCASE(°C)
Fig 11: Current De-rating
175
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Page 4 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
100
10
1
Tf
1000
100
10
1
0
10
20
30
40
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
0
25
50
75
100
125
150
Rg (Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
175
10000
Td(off)
Tf
Switching Time (nS)
1000
100
10
1
0
Rev.1.0: March 2015
50
100
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
200
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Page 5 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
4
Eoff
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eoff
2
1
0
3
2
1
0
0
10
20
30
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
40
0
4
25
50
75
100
Rg (Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
4
Eoff
Eoff
Switching Energ y (mJ)
Switching Energy (mJ)
3
2
1
0
3
2
1
0
0
Rev.1.0: March 2015
125
25
50
75
100 125 150 175
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
200
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100
200
300
400
500
600
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω)
700
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-02
3
1.E-03
1.E-04
VSD (V)
ICE(S) (A)
VCE=1200V
1.E-05
1.E-06
1.8
20A
1.2
5A
VCE=960V
0.6
1.E-07
1.E-08
0
50
100
150
1
IF=1A
0
200
0
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
ZθJC Normalized Transient
Thermal Resistance
40A
2.4
25
50
75
100
125
150
175
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: March 2015
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Page 7 of 8
Rev.1.0: March 2015
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Page 8 of 8