QID1210005 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Split Dual Si/SiC
Hybrid IGBT Module
100 Amperes/1200 Volts
Y
A
AA
D
AC
AB
F
Z
DETAIL "B"
Q
Q
Q
P
1 2
3
U
4
E2
5
6
7
C2
8
9
Description:
Powerex IGBT Modules are
designed for use in high frequency
applications; upwards of 30 kHz
for hard switching applications
and 80 kHz for soft switching
applications. Each module consists
of two IGBT Transistors with each
transistor having a reverseconnected super-fast recovery
free-wheel silicon carbide Schottky
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
10 11 12
E1
C1
X
B
M
N
E
G
DETAIL "B"
G2
S2
G1 S1
20 19 18 17
L
16 15 14 13
T
S
R
W
DETAIL "A"
V
H
K
C
T
DETAIL "A"
C1 (10 - 12)
C2 (4 - 6)
G1 (15 - 16)
G2 (19 - 20)
E1 (13 - 14)
E2 (17 - 18)
E1 (7 - 9)
E2 (1 - 3)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.32
109.8
Q
0.449
11.40
B
2.21
56.1
R
0.885
22.49
C
0.71
18.0
S
1.047
26.6
D
3.70±0.02
94.0±0.5
T
0.15
3.80
E
2.026
51.46
U
0.16
4.0
F
3.17
80.5
V
0.30
7.5
G
1.96
49.8
W
0.045
1.15
H
1.00
25.5
X
0.03
0.8
K
0.87
22.0
Y
0.16
4.0
L
0.266
6.75
Z
0.47
12.1
M
0.26
6.5
AA
N
0.59
15.0
P
0.586
14.89
0.17 Dia.
4.3 Dia.
AB
0.10 Dia.
2.5 Dia.
AC
0.08 Dia.
2.1 Dia.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 4
Features:
£ Low ESW(off)
£ Aluminum Nitride Isolation
£ Discrete Super-Fast
Recovery Free-Wheel Silicon
Carbide Schottky Diode
£ Low Internal Inductance
£ 2 Individual Switches
per Module
£ Isolated Baseplate for Easy
Heat Sinking
£ Copper Baseplate
£ RoHS Compliant
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
SymbolQID1210005 Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 150
°C
Collector-Emitter Voltage (G-E Short)
VCES1200 Volts
Gate-Emitter Voltage (C-E Short)
VGES±20 Volts
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
IC
100*Amperes
ICM
200*Amperes
IE
80*Amperes
Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)**
IEM
455*Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
PC 730Watts
Mounting Torque, M6 Mounting
—
Weight
40
in-lb
— 270Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
VISO2500 Volts
IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
—
5.0
6.5
Volts
IC = 100A, VGE = 15V, Tj = 125°C
—
5.0
—
Volts
QG
VCC = 600V, IC = 100A, VGE = 15V
—
450
—
nC
Total Gate Charge
Input Capacitance
Cies
Output Capacitance
Coes
—
—
16
nf
VCE = 10V, VGE = 0V
—
—
1.3
nf
—
—
0.3
nf
—
—
TBD
ns
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 100A,
Load
Rise Time
Switch
Turn-off Delay Time
TimeFall Time
tr
VGE1 = VGE2 = 15V,
—
—
TBD
ns
td(off)
RG = 3.1Ω,
—
—
TBD
ns
tf
Inductive Load Switching Operation
—
—
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi).
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 4
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Diode Forward Voltage
VFM
Diode Reverse Current
IR
Diode Capacitive Charge
QC
Test Conditions
Min.
Typ.
Max.
Units
IF = 80A, VGS = -5V
—
1.6
2.0
Volts
IF = 80A, VGS = -5V, Tj = 175°C
—
2.5
3.2
Volts
VR = 1200V
—
140
800
μA
VR = 1200, Tj = 150°C
—
260
1600
μA
VR = 1200V, IF = 80A, di/dt = 800A/μs
—
520
—
nC
Test Conditions
Min.
Typ.
Max.
Units
Per IGBT 1/2 Module,
—
—
0.17
°C/W
—
—
0.304
°C/W
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Thermal Resistance, Junction to Case
Rth(j-c)Q
TC Reference Point Under Chips
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
TC Reference Point Under Chips
Contact Thermal Resistance
Rth(c-f)
External Gate Resistance
RG
Internal Inductance
Lint
Per 1/2 Module, Thermal Grease Applied
—
0.04
—
°C/W
31
Ω
10—
nH
3.1—
IGBT Part
—
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 4
3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
13
150
12
100
11
10
50
9
0
8
0
2
4
6
8
VGE = 10V
Tj = 25°C
Tj = 125°C
150
100
50
0
10
5
0
15
10
20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
10
VGE = 15V
Tj = 25°C
Tj = 125°C
8
7
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
200
14
VGE = 20V
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
200
TRANSFER CHARACTERISTICS
(TYPICAL)
6
5
4
3
2
1
0
0
50
100
150
COLLECTOR-CURRENT, IC, (AMPERES)
200
Tj = 25°C
IC = 200A
8
6
IC = 100A
4
IC = 40A
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
11/14 Rev. 4
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
FREE-WHEEL SCHOTTKY DIODE
REVERSE CHARACTERISTICS
(TYPICAL)
160
1600
128
REVERSE CURRENT, IR, (μA)
FORWARD CURRENT, IF, (μA)
Tj = 25°C
Tj = 75°C
Tj = 125°C
96
Tj = 175°C
64
32
1280
Tj = 175°C
960
Tj = 125°C
640
Tj = 75°C
320
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
102
0
1
2
3
4
0
5
0
500
1000
REVERSE VOLTAGE, VR, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
2000
103
VGE = 0V
Cies
101
Coes
100
102
TBD
101
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
Cres
10-1
10-1
1500
FORWARD VOLTAGE, VF, (VOLTS)
SWITCHING TIME, (ns)
0
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 4
5
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
16
VCC = 400V
VCC = 600V
12
8
4
0
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
IC = 100A
102
101
100 200 300 400 500 600 700
0
TBD
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
100
10-1
101
102
103
GATE CHARGE, QG, (nC)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
100
100
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
GATE CHARGE VS. VGE
TBD
101
GATE RESISTANCE, RG, (Ω)
102
TBD
101
100
101
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
102
103
EMITTER CURRENT, IE, (AMPERES)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6
11/14 Rev. 4
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
VCC = 600V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
100
10-1
TBD
10-2
100
100
101
GATE RESISTANCE, RG, (Ω)
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.17°C/W
(IGBT)
Rth(j-c) =
0.304°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 4
7