IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P1
MBM200H45E2-H
Silicon N-channel IGBT 4500V E2 version
FEATURES
 Low switching loss IGBT module.
 Low noise due to ultra soft fast recovery diode.
 Isolated heat sink (terminal to base).
o
ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item
Collector Emitter Voltage
Gate Emitter Voltage
DC
1ms
DC
1ms
Collector Current
Forward Current
Peak Forward Surge Current
Total Power Dissipation
Junction Temperature
Junction Operating Temperature
Case Temperature
Storage Temperature
Isolation Voltage
Terminals (M6)
Screw Torque
Mounting (M6)
Symbol
Unit
MBM200H45E2-H
VCES
VGES
IC
ICp
IF
IFM
IFSM
Ptot
Tj
Tjop
Tc
Tstg
VISO
-
V
V
4,500
20
o
200 (Tc=80 C)
400
200
400
1500 (Tj=125℃, 50Hz, 10ms Half-sinewave)
1,960 (Tc=25℃ per IGBT)
-40 ~ +125
-40 ~ +125
-40 ~ +125
-40 ~ +125
9,000 (AC 1 minute)
6
(1)
6
(1)
A
A
Ap
W
o
C
o
C
o
C
o
C
VRMS
N·m
Notes: (1) Recommended Value 5.50.5N·m
ELECTRICAL CHARACTERISTICS
(IGBT)
Item
Symbol
Unit
Min.
-500
3.5
5.4
-
Typ.
Max.
Test Conditions
o
7
Tj=25 C
Collector Emitter Cut-Off Current
I CES
mA
VCE=4,500V, VGE=0V
o
4
16 Tj=125 C
o
Gate Emitter Leakage Current
IGES
nA
+500 VGE=20V, VCE=0V, Tj=25 C
o
3.2
4.5 Tj=25 C
Collector Emitter Saturation Voltage
VCE(sat)
V
I =200A, VGE=15V
o
4.2
4.7 Tj=125 C C
o
Gate Emitter Threshold Voltage
VGE(TO)
V
6.4
7.4 VCE=10V, IC=200mA, Tj=25 C
Gate Charge
Qg
C
2.1
VCC=2800V, Ic=200A, VGE=+/-15V
Input Capacitance
Cies
nF
28
o
Output Capacitance
Coes
nF
2.3
VCE=10V,VGE=0V, f=100kHz, Tj=25 C
Reverse transfer capacitance
Cres
nF
1.1
o
Internal Gate Resistance
Rge

4.8
VCE=10V,VGE=0V, f=100kHz, Tj=25 C
o
1.9
Tj=25 C
Rise Time
tr
o
2.1
4.2 Tj=125 C
o
2.4
Tj=25 C VCC=2,800V, Ic=200A,
Turn On Time
ton
o
2.7
5.4 Tj=125 C Ls=400nH,
Switching Times
s
o
(2),
1.8
Tj=25 C RG=20Ω
Fall Time
tf
o
2.4
3.6 Tj=125 C VGE=+/-15V
o
3.6
Tj=25 C
Turn Off Time
toff
o
4.3
6.7 Tj=125 C
o
Eon(full)
0.73
Tj=25 C
o
Turn On Loss
Eon(10%)
J/p
0.85
1.30 Tj=125 C VCC=2800V, Ic=200A,
o
Eon(full)
0.92
Tj=125 C Ls=400nH
o
(2)
Eoff(full)
0.60
Tj=25 C RG= 20Ω
o
Turn Off Loss
Eoff(10%)
J/ p
0.65
1.00 Tj=125 C VGE=+/-15V
o
Eoff(full)
0.73
Tj=125 C
Notes:(2) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P2
MBM200H45E2-H
ELECTRICAL CHARACTERISTICS (DIODE)
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
o
3.6
4.15 Tj=25 C
Peak Forward Voltage Drop
VFM
V
IF=200A, VGE=0V
o
3.2
3.9
4.7 Tj=125 C
o
0.5
Tj=25 C
Reverse Recovery Time
trr
s
o
0.7
1.4 Tj=125 C
Vcc=2800V,
o
230
Tj=25 C
Reverse Recovery Current
Irr
A
IF=200A, Ls=400nH
o
250
Tj=125 C
RG= 20Ω
o
100
Tj=25 C
Recovery charge
Qrr
C
o
170
Tj=125 C
o
Err(full)
0.16
Tj=25 C VCC=2800V,IF=200A,
o
Reverse Recovery Loss
Err(10%)
J/ p
0.26
0.50 Tj=125 C Ls=400nH, RG= 20Ω (3)
o
Err(full)
0.29
Tj=125 C
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
THERMAL CHARACTERISTICS
Item
Symbol Unit
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
Contact Thermal Impedance
Rth(c-f)
Min.
Typ.
K/W
-
-
K/W
-
MODULE MECHANICAL CHARACTERISTICS
Item
Weight
Creepage Distance
Clearance Distance
Stray inductance in module
Resistance, Terminal-chip
Comparative Tracking Index
Module base plate Material
Baseplate Thickness
Insulation plate Material
Terminal Surface treatment
Case Material
Between terminal
Terminal-Base
Between terminal
Terminal-Base
LS(CM-EM)
RCC’+EE’
(CTI)
Max.
Unit
Characteristics
g
mm
mm
mm
mm
nH
m
840
54
64
19
35
140
1.5
600
Cu
5
Al N
Ni plating
Poly-Phenilene Sulfide
mm
Test Conditions
0.052
Junction to case
0.104
Case to fin (grease=1W/(m･K),
0.032
heat-sink flatness 50um)
Conditions
Collector-sense to Emitter-main
Collector-sense to Emitter-main
Between C1- E2
Terminal to chip
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P3
MBM200H45E2-H
DEFINITION OF TEST CIRCUIT
Ls
LLOAD
Vcc
Rg
G/D
Fig.1 Switching test circuit
Ic
Vce
Ls=
VL
t
0
VL
( dｔ )t=t
dIc
L
tL
Fig.2 Definition of Ls
Ic
Ic
Vce
90%
Vce
Vce
0.1Vce
90%
Irm
0
0
Vge
10%
t1
10%
10%
10%
t
t
tr
ton
t3 t4
0
0
10%
0.5Irm
0.1IF
0
t
t
Vge
90%
t
tf
trr
IF
-Ic
toff
t2
t5
t7
t4
∫ Ic･Vce dt
Eon(10%)=
t8
t6
t9
t8
∫ Ic･Vce dt
Eoff(10%)=
t11
t12
∫ IF･Vce dt
Err(10%)=
t3
t7
t11
t2
t6
t10
∫ Ic･Vce dt
Eon(Full)=
t1
∫ Ic･Vce dt
Eoff(Full)=
t5
Fig.3 Definition of switching loss
t12 t10
∫ IF･Vce dt
Err(Full)=
t9
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P4
MBM200H45E2-H
STATIC CHARACTERISTICS
VGE=15V 13V
400
Typical
VGE=15V 13V
400
Tj=25oC
Typical
Tj=125oC
350
350
300
300
11V
Collector Current , Ic (A)
Collector Current , Ic (A)
11V
250
200
150
100
9V
7V
0
0
2
4
6
8
9V
100
VGE=0V
350
300
Tj=25oC
Tj=125oC
200
150
100
50
0
1
2
3
4
Forward Voltage, VF(V)
IF vs. VF
2
4
6
Ic vs. VCE(Tj=125oC)
Typical
250
7V
0
5
8
Collector to Emitter Voltage, VCE(V)
Ic vs. VCE(Tj=25oC)
Forward Curent , IF (A)
150
0
10
Collector to Emitter Voltage, VCE(V)
0
200
50
50
400
250
6
10
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
MBM200H45E2-H
DYNAMIC CHARACTERISTICS
TYPICAL
3
TYPICAL
3
【Conditions】
【Conditions】
【Conditions】
【Conditions】
Vcc=2800V
Vcc=2800V
Tc=125℃
Tj=125℃
L=400nH
L=400nH
=20Ω
RRGG=20Ω
=±15V
VVGG=±15V
Inductive
Load
Inductive Load
Vcc=2800V
Vcc=2800V
Tc=125℃
Tj=125℃
L=400nH
RG=20Ω
VG
G=±15V
=±15V
Inductive Load
Inductive
Load
2
Turn-off Loss , Eoff (J/pulse)
Turn-on Loss , Eon (J/pulse)
Eon(full)
2
1
Eoff(Full)
1
Eon(10%)
Eoff(10%)
0
0
0
100
200
300
0
400
100
Collector Current , Ic (A)
【Conditions】
【Conditions】
Vcc=2800V
Vcc=2800V
Tc=125℃
Tj=125℃
L=400nH
L=400nH
RG
G=20Ω
=20Ω
R
VG
G=±15V
=±15V
V
Inductive Load
Inductive Load
Vcc=2800V
Vcc=2800V
Tc=125℃
Tj=125℃
L=400nH
L=400nH
=20Ω
RRGG=20Ω
=±15V
VVGG=±15V
Inductive Load
Inductive Load
0.6
0.4
Err(Full)
Switching time, ton,tr,toff,tf,trr (us)
Reverse Recovery Loss , Err (J/pulse)
TYPICAL
10
【Conditions】
【Conditions】
0.2
400
Turn-off loss vs. Collector current
TYPICAL
0.8
300
Collector Current , Ic (A)
Turn-on loss vs. Collector current
1
200
toff
5
ton
tf
tr
Err(10%)
trr
0
0
0
100
200
300
400
0
100
200
300
Collector Current , IF (-Ic) (A)
Collector Current, IC,IF(A)
Recovery loss vs. Forward current
Switching time vs. Collector current
400
P5
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P6
MBM200H45E2-H
DYNAMIC CHARACTERISTICS
TYPICAL
3
TYPICAL
2
【Conditions】
【Conditions】
【Conditions】
【Conditions】
Vcc=2800V
Vcc=2800V
Ic=200A
Ic=200A
Tc=125℃
Tj=125℃
L=400nH
L=400nH
G=±15V
=±15V
VVG
Inductive Load
Inductive
Load
Eon(full)
2
Turn-off Loss , Eoff (J/pulse)
Turn-on Loss , Eon (J/pulse)
Vcc=2800V
Vcc=2800V
Ic=200A
Ic=200A
Tc=125℃
Tj=125℃
L=400nH
L=400nH
=±15V
VVGG=±15V
Inductive Load
Load
Inductive
1
1
Eoff(Full)
Eoff(10%)
Eon(10%)
0
0
0
10
20
30
40
50
60
0
10
Gate Resistance, RG (Ω)
【Conditions】
【Conditions】
Vcc=2800V
Vcc=2800V
Ic=200A
Ic=200A
Tc=125℃
Tj=125℃
L=400nH
L=400nH
VG
G=±15V
=±15V
V
Inductive Load
Inductive
Load
Vcc=2800V
Vcc=2800V
Ic=200A
Ic=200A
Tc=125℃
Tj=125℃
L=400nH
L=400nH
V=±15V
G=±15V
VG
InductiveLoad
Load
Inductive
Switching time, ton,tr,toff,tf,trr (us)
Reverse Recovery Loss , Err (J/pulse)
50
60
TYPICAL
10
【Conditions】
【Conditions】
0.3
Err(10%)
Err(Full)
0.2
40
Turn-off loss vs. Gate Resistance
TYPICAL
0.4
30
Gate Resistance, RG (Ω)
Turn-on loss vs. Gate Resistance
0.5
20
ton
5
toff
tr
0.1
tf
trr
0
0
0
10
20
30
40
50
Gate Resistance, RG (Ω)
Recovery loss vs. Gate Resistance
60
0
10
20
30
40
50
Gate Resistance, RG (Ω)
Switching time vs. Gate Resistance
60
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P7
MBM200H45E2-H
TYPICAL
TYPICAL
100.0
Conditions: Ls=400nH,VCC=2800V,VGE=+/-15V,
RG(on/off)=220/220,Tj=125oC,
15
Cies
10
Cies, Coes, Cres (nF)
10.0
VGE (V)
5
1.0
Coes
0
-5
Cres
-10
0.1
0
1
10
100
-15
-2.0
-1.5
-1.0
-0.5
Collector to Emitter Voltage, VCE (V)
Coes, Cres
– VCE Voltage
Capacitance Cies,
vs. Collector
to Emitter
0.0 0.5
QG (uC)
1.0
1.5
2.0
QG-VGE Curve
500
500
400
300
300
Pmax=0.5MW
IC(A)
IR(A)
400
【Conditions】
Vcc≦3400V,IF≦400A
di/dt≦ 1,000A/us
Tj=125oC
Ls≦ 400nH
200
200
【Conditions】
Vcc≦3400V、Tj=125℃
RG≦20Ω ,VGE=+-15V
Ls≦400nH
Pulse width≧10μs
100
100
VCE( spike Voltage )
IC( to be turned off )
Ic
Vce
0
t
Definition of RBSOA waveform
0
0
500
1000
1500
2000
2500
3000
3500
VCE (V)
*Defined at auxiliary terminals
RBSOA
4000
4500
0
0
500
1000
1500
2000
2500
3000
3500
VR(V)
*Defined at auxiliary terminals
RecSOA
4000
4500
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
MBM200H45E2-H
TRANSIENT THERMAL IMPEDANCE
Maximum
Transient thermal impedance : Zth(j-c) (K/W)
1
FWD
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
Time : t(s)
1
10
Transient Thermal Impedance Curve
Curve approximation model
(Σrth[n]*(1-exp(-t/τth[n])))
n
τ th[n]
rth[n,IGBT]
rth[n,Diode]
1
1.85E-01
2.83E-02
5.55E-02
2
4.11E-02
1.64E-02
3.41E-02
3
2.80E-03
7.28E-03
1.40E-02
4
1.54E-03
8.58E-10
1.00E-04
Unit
sec
K/W
K/W
Material Declaration
Please note the following material is contained in the product in order to keep product
characteristic and reliability level.
Material
Contained part
Lead (Pb) and its compounds
Solder
P8
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P9
MBM200H45E2-H
Module Outline Drawing
Unit: mm
CIRCUIT DIAGRAM
C1
C1
G1
E1
EE1/C2
1/C2
G2
E2
E2
IGBT MODULE
Spec.No.IGBT-SP-12010 R2
P10
MBM200H45E2-H
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.

For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
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