Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

STGB30H60DLFB,
STGW30H60DLFB
Trench gate field-stop IGBT, HB series
600 V, 30 A high speed
Datasheet - production data
Features
• Designed for soft commutation only
• Maximum junction temperature: TJ = 175 °C
TAB
• High speed switching series
• Minimized tail current
3
1
2
D2PAK
3
1
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Low VF soft recovery co-packaged diode
• Tight parameters distribution
TO-247
• Safe paralleling
• Low thermal resistance
Figure 1. Internal schematic diagram
• Lead free package
Applications
C (2, TAB)
• Microwave oven
• Resonant converters
Description
G (1)
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new "HB"
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
E (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB30H60DLFB
GB30H60DLFB
D2PAK
Tape and reel
STGW30H60DLFB
GW30H60DLFB
TO-247
Tube
July 2014
This is information on a product in full production.
DocID026409 Rev 2
1/20
www.st.com
20
Contents
STGB30H60DLFB, STGW30H60DLFB
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
D2PAK, STGB30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
TO-247, STGW30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
60
A
IC
Continuous collector current at TC = 100 °C
30
A
Pulsed collector current
120
A
Continuous forward current TC = 25 °C
60
A
VCES
ICP(1)
IF
Parameter
Continuous forward current TC = 25 °C
30
A
IFP(1)
Pulsed forward current
120
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25 °C
260
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Value
Symbol
RthJC
RthJA
Parameter
D2PAK
Unit
TO-247
Thermal resistance junction-case IGBT
0.58
°C/W
Thermal resistance junction-case diode
2.08
°C/W
Thermal resistance junction-ambient
DocID026409 Rev 2
62.5
50
°C/W
3/20
Electrical characteristics
2
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
IF = 30 A TJ = 125 °C
1.2
IF = 30 A TJ = 175 °C
1.05
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
V
1.75
1.4
Gate threshold voltage
2
1.65
IF = 30 A
VGE(th)
Unit
V
1.55
VGE = 15 V, IC = 30 A
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 30 A
TJ = 175 °C
Forward on-voltage
Max.
600
VGE = 15 V, IC = 30 A
VCE(sat)
Typ.
5
6
1.7
V
7
V
VCE = 600 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/20
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 520 V, IC = 30 A,
VGE = 15 V, see Figure 26
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026409 Rev 2
Min.
Typ.
Max.
Unit
-
3659
-
pF
-
101
-
pF
-
76
-
pF
-
149
-
nC
-
25
-
nC
-
62
-
nC
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(off)
tf
Parameter
Test conditions
Turn-off delay time
Current fall time
Eoff(1)
Turn-off switching losses
td(off)
Turn-off delay time
tf
Eoff(1)
Current fall time
Turn-off switching losses
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
see Figure 25
VCE = 400 V, IC = 30 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 25
Min.
Typ.
Max.
Unit
146
-
ns
-
23
-
ns
-
293
-
µJ
-
158
-
ns
-
65
-
ns
-
572
-
µJ
Unit
1. Turn-off losses include also the tail of the collector current.
Table 7. IGBT switching characteristics (capacitive load)
Symbol
Parameter
Test conditions
VCC = 320 V, VGE = 150 V,
RG =20 Ω, IC = 30 A,
L = 100 µH, Csnub = 20 nF
(see Figure 25)
Eoff(1)
Turn-off switching losses
VCC = 320 V, VGE = 150 V,
RG =20 Ω, IC = 30 A,
L = 100 µH, Csnub = 20 nF,
TJ = 175 °C
(see Figure 25)
Min.
Typ.
Max.
-
150
-
µJ
-
300
-
1. Turn-off losses include also the tail of the collector current.
DocID026409 Rev 2
5/20
Electrical characteristics
2.1
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics (curve)
Figure 2. Power dissipation vs. case
temperature
GIPG280120141353FSR
Ptot
(W)
Figure 3. Collector current vs. case temperature
GIPG280120141346FSR
IC
(A)
60
250
200
40
150
100
20
50
VGE ≥ 15V, TJ ≤ 175 °C
0
0
25
50
VGE ≥ 15V, TJ ≤ 175 °C
0
0
75 100 125 150 175 TC(°C)
Figure 4. Output characteristics (TJ = 25°C)
GIPG280120141156FSR
IC
(A)
VGE =15 V
80
13V
40
40
20
20
4
0
0
VCE(V)
Figure 6. VCE(sat) vs. junction temperature
GIPG280120141440FSR
VGE= 15V
2.2
11V
9V
80
60
VCE(sat)
(V)
GIPG280120141206FSR
IC
(A)
60
3
TC(°C)
Figure 5. Output characteristics (TJ = 175°C)
VGE =15 V
9V
2
75 100 125 150
100
11V
1
50
13V
100
0
0
25
7V
1
2
3
4
VCE(V)
Figure 7. VCE(sat) vs. collector current
GIPG280120141446FSR
VCE(sat)
(V)
VGE= 15V
2.2
IC= 60A
2.0
2.0
1.8
1.8
TJ= 175°C
TJ= 25°C
IC= 30A
1.6
1.4
IC= 15A
1.2
-50
6/20
0
50
100
150 TJ(°C)
1.6
TJ= -40°C
1.4
1.2
0
DocID026409 Rev 2
20
30
40
50
IC(A)
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
GIPG260620141544FSR
Ic [A]
Figure 9. Forward bias safe operating area
GIPG280120141450FSR
IC
(A)
Vce(sat) limit
60
Tc=80°C
100
50
Tc=100 °C
40
10 μs
10
100 μs
30
1 ms
20
1
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
10
(single pulse TC= 25°C,
TJ ≤ 175 °C; VGE=15V)
0
1
f [kHz]
10
Figure 10. Transfer characteristics
IC
(A)
GIPG280120141330FSR
25 °C
175 °C
100
0.1
1
10
100
VCE(V)
Figure 11. Diode VF vs. forward current
GIPG260620141554FSR
VF (V)
VCE =10 V
TJ= -40°C
2.0
80
1.6
TJ= 25°C
60
1.2
40
TJ= 175°C
0.8
20
0
7
9
13
11
VGE(V)
Figure 12. Normalized VGE(th) vs junction
temperature
AM16060v1
VGE(th)
(norm)
0.4
10
20
30
40
50
IF(A)
Figure 13. Normalized V(BR)CES vs. junction
temperature
AM16059v1
V(BR)CES
(norm)
VCE= VGE
IC= 1mA
1.1
IC= 2mA
1.0
0.9
1.0
0.8
0.7
0.6
-50
0
50
100
150
TJ(°C)
DocID026409 Rev 2
0.9
-50
0
50
100
150
TJ(°C)
7/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
GIPG280120141707FSR
C(pF)
Cies
VGE
(V)
16
GIPG280120141455FSR
VCC= 520V, IC= 30A
IG= 1mA
14
12
1000
10
8
6
100
4
Coes
Cres
10
0.1
1
10
Figure 16. Switching loss vs collector current
1200
GIPG280120141606FSR
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
1000
0
0
VCE(V)
100
E (μJ)
2
40
80
120
160
Qg(nC)
Figure 17. Switching loss vs gate resistance
GIPG280120141536FSR
E (μJ)
1000
EOFF
VCC= 400V, VGE= 15V
IC= 30A, TJ= 175 °C
EOFF
900
800
800
600
700
400
600
200
0
0
20
40
60
Figure 18. Switching loss vs temperature
GIPG280120141532FSR
E (μJ)
500
0
IC(A)
20
30
40
RG(Ω)
Figure 19. Switching loss vs collector-emitter
voltage
GIPG280120141610FSR
E (μJ)
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 30A
800
EOFF
600
10
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 30A
EOFF
600
400
400
200
0
20
8/20
200
40
60
80
100 120 140 160
TJ(°C)
DocID026409 Rev 2
0
150
250
350
450
VCE(V)
STGB30H60DLFB, STGW30H60DLFB
Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
(ns)
GIPG300620141033FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
t
(ns)
GIPG300620141039FSR
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
tdoff
tdoff
100
100
tf
10
0
10
30
20
40
50
tf
IC(A)
10
0
10
20
30
40
RG(Ω)
Figure 22. Switching-off losses vs. capacitive
load
GIPG300620141047FSR
Eoff
(μJ)
Lsnub= 100μH, VGE= 15V,
IC= 30A, VCC= 320V
300
250
TJ= 175°C
200
150
TJ= 25°C
100
50
0
20
40
60
80
C(nF)
DocID026409 Rev 2
9/20
Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
Figure 23. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
-4
10
-3
10
-2
10
-1
10
Figure 24. Thermal impedance for diode
10/20
DocID026409 Rev 2
tp (s)
STGB30H60DLFB, STGW30H60DLFB
3
Test circuits
Test circuits
Figure 25. Test circuit for inductive load
switching
Figure 26. Gate charge test circuit
k
k
k
k
k
k
AM01504v1
Figure 27. Switching waveform
AM01505v1
Figure 28. Diode reverse recovery waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ts
tf
10%
Tr(Voff)
t
Tcross
90%
IRRM
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
VRRM
Tf
Toff
dv/dt
AM01506v1
DocID026409 Rev 2
AM01507v1
11/20
Package mechanical data
4
STGB30H60DLFB, STGW30H60DLFB
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
D2PAK, STGB30H60DLFB
Figure 29. D²PAK (TO-263) drawing
0079457_U
12/20
DocID026409 Rev 2
STGB30H60DLFB, STGW30H60DLFB
Package mechanical data
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
DocID026409 Rev 2
13/20
Package mechanical data
STGB30H60DLFB, STGW30H60DLFB
Figure 30. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters.
14/20
DocID026409 Rev 2
Footprint
STGB30H60DLFB, STGW30H60DLFB
4.2
Package mechanical data
TO-247, STGW30H60DLFB
Figure 31. TO-247 drawing
0075325_G
DocID026409 Rev 2
15/20
Package mechanical data
STGB30H60DLFB, STGW30H60DLFB
Table 9. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
16/20
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026409 Rev 2
5.70
STGB30H60DLFB, STGW30H60DLFB
5
Packaging mechanical data
Packaging mechanical data
Figure 32. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DocID026409 Rev 2
17/20
Packaging mechanical data
STGB30H60DLFB, STGW30H60DLFB
Figure 33. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/20
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID026409 Rev 2
Min.
Max.
330
13.2
26.4
30.4
STGB30H60DLFB, STGW30H60DLFB
6
Revision history
Revision history
Table 11. Document revision history
Date
Revision
Changes
04-Jul-2014
1
Initial release.
23-Jul-2014
2
Document status promoted from preliminary data to production data
DocID026409 Rev 2
19/20
STGB30H60DLFB, STGW30H60DLFB
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20/20
DocID026409 Rev 2
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