HIGH POWER SILICON
PNP/NPN TRANSISTORS
2N5876 (PNP)
2N5878 (NPN)
•
High Power, Low VCE(Sat).
•
Hermetic TO3 (TO-204AA) Metal Package.
•
Ideally Suited For Power Amplifier And Switching Applications.
•
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
2N5876
PNP
2N5878
NPN
-80V
-80V
-5V
80V
80V
5V
10A
4A
150W
0.857W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
Units
1.17
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9495
Issue 2
Page 1 of 3
HIGH POWER SILICON
PNP/NPN TRANSISTORS
2N5876 / 2N5878
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (1)
Symbols
Parameters
Test Conditions
V(BR)CEO
Collector-Emitter
Breakdown Voltage
IC = 20mA
IB = 0
ICEO
Collector Cut-Off Current
VCE = 40V
IB = 0
1.0
ICEX
Collector Cut-Off Current
VCE = 80V
VBE = -1.5V
0.5
TC = 150°C
5
ICBO
Collector Cut-Off Current
VCB = 80V
IE = 0
0.5
IEBO
Emitter Cut-Off Current
VEB = 5V
IC = 0
1.0
IC = 1.0A
VCE = 4V
35
IC = 4A
VCE = 4V
20
IC = 10A
VCE = 4V
4
IC = 5A
IB = 0.5A
1.0
IC = 10A
IB = 2.5A
3
Base-Emitter Saturation
Voltage
IC = 10A
IB = 2.5A
2.5
Base-Emitter On Voltage
IC = 4A
VCE = 4V
1.5
IC = 0.5A
VCE = 10V
(2)
hFE
Forward-current transfer
ratio
(2)
(2)
VCE(sat)
VBE(sat)
VBE(on)
(2)
(2)
Collector-Emitter Saturation
Voltage
Min.
Typ
Max.
80
Units
V
150
mA
-
V
DYNAMIC CHARACTERISTICS
fT
(3)
hfe
Current Gain-Bandwidth
Product
Small Signal Current Gain
f = 1.0MHz
IC = 1.0A
VCE = 4V
f = 1.0KHz
4
MHz
20
-
Notes
(1) For PNP (2N5876) device, voltage and current values are negative
(2) Pulse Width ≤ 380us, δ ≤ 2%
(3) fT = |hfe| * ftest
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9495
Issue 2
Page 2 of 3
HIGH POWER SILICON
PNP/NPN TRANSISTORS
2N5876 / 2N5878
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9495
Issue 2
Page 3 of 3