SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
•
Matched Dual Transistor.
•
Hermetic Metal TO78 Package.
•
Suitable For High Gain, Low Noise, Differential Amplifier,
Applications.
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Each Side
Total Device
-60V
-60V
-5V
-50mA
500mW
600mW(1)
2.86mW/°C 3.43mW/°C
-65 to +200°C
-65 to +200°C
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
THERMAL PROPERTIES (Each Side)
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min.
1Typ.
Max.
Units
350
°C/W
Notes
(1) Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 1 of 4
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
V(BR)CBO
IC = -10µA
IE = 0
-60
IC = -10mA
IB = 0
-60
V(BR)EBO
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
IE = -10µA
IC = 0
-5
ICBO
Collector-Cut-Off
Current
VCB = -50V
IE = 0
-10
nA
TA = 150°C
-10
µA
IEBO
Emitter-Cut-Off
Current
VEB = -4V
IC = 0
-20
nA
IC = -10µA
VCE = -5V
100
IC = -100µA
VCE = -5V
150
TA = -55°C
60
IC = -500µA
VCE = -5V
150
450
IC = -1.0mA
VCE = -5V
150
450
IC = -10mA
VCE = -5V
125
IC = -100µA
VCE = -5V
-0.7
IC = -100µA
IB = -10µA
-0.7
IC = -1.0mA
IB = = -100µA
-0.8
IC = -100µA
IB = -10µA
-0.2
IC = -1.0mA
IB = = -100µA
-0.25
(2)
V(BR)CEO
hFE
Forward-current
transfer ratio
(2)
(2)
VBE
Base-Emitter Voltage
VBE(sat)
(2)
VCE(sat)
(2)
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Min.
Typ
Max.
Units
V
450
V
ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
hFE1
hFE2
Forward-current
transfer ratio (gain
ratio)
IC = -100µA
(3)
Min.
VCE = -5V
Typ
0.9
VCE = -5V
|VBE1-VBE2|
|∆(VBE1-VBE2)∆TA|
Base-Emitter Voltage
Differential
Base-Emitter Voltage
Differential Change
Due To Temperature
Max.
1.0
5
IC = -10µA to -10mA
VCE = -5V
IC = -100µA
VCE = -5V
IC = -100µA
TA1 = 25°C
TA2 = -55°C
VCE = -5V
IC = -100µA
TA1 = 25°C
TA2 = 125°C
Units
mV
3
0.8
mV
1.0
Notes
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) The lower of the two readings is taken as hFE1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 2 of 4
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
DYNAMIC CHARACTERISTICS
Symbols
Parameters
Test Conditions
IC = -500µA
|hfe|
Small signal forward-current
transfer ratio
Min.
VCE = -5V
VCE = -5V
1.0
f = 100MHz
Cobo
Cibo
(4)
hie
(4)
hoe
Output Capacitance
Input Capacitance
IE = 0
hre
Voltage Feedback Ratio
f = 1.0KHz
hfe
Small Signal Current Gain
15
VCE = -10V
3
30
KΩ
5
60
µhmos
25
x 10-4
150
f=100Hz
BW=20Hz
(4)
NF
Noise Figure
VCE = -10V
f=1.0KHz
IC = -100µA
BW=200Hz
RG = 3KΩ
f=10KHz
BW=2KHz
Noise Figure (Broadband)
5
pF
VEB = -0.5V
Input Impedance
IC = -1.0mA
Units
4
f = 1.0MHz
Output Admittance
(4)
VCB = -5V
f = 1.0MHz
IC = 0
Max.
1.0
f = 30MHz
IC = -1.0mA
Typ
f=10Hz to 15.7KHz
600
7
3
dB
2.5
3.5
Notes
Notes
(4) By design only, not a production test.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 3 of 4
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
4.20 (0.165)
4.69 (0.185)
7.75 (0.305)
8.51 (0.335)
12.7 (0.500)
Min.
1.02
(0.040)
Max.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
4
2.54
(0.100)
5
3
0.74 (0.029)
1.14 (0.045)
6
2
1
45°
0.71 (0.028)
0.86 (0.034)
TO-78 (MO-002AG)
Underside View
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Emitter 1
Pin 4 – Emitter 2
Pin 5 – Base 2
Pin 6 – Collector 2
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 4 of 4