Ordering number : ENA1118A
2SC5551A
RF Transistor
30V, 300mA, fT=3.5GHz, NPN Single PCP
http://onsemi.com
Features
High fT : (fT=3.5GHz typ)
Large current : (IC=300mA)
Large allowable collector dissipation (1.3W max)
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
Unit
VCBO
VCEO
40
V
30
V
VEBO
IC
2
Collector Dissipation
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
V
300
mA
600
mA
1.3
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
1.6
2.5
1.0
1
2
Packing Type: TD
4.0
1.5
2SC5551AE-TD-E
2SC5551AF-TD-E
TD
Marking
LOT No.
4.5
EB
Top View
RANK
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
PCP
Semiconductor Components Industries, LLC, 2013
August, 2013
80812 TKIM/D0209AB TKIM TC-00002042 No. A1118-1/6
2SC5551A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
VCB=20V, IE=0A
VEB=1V, IC=0A
hFE1
VCE=5V, IC=50mA
VCE=5V, IC=300mA
hFE2
Gain-Bandwidth Product
Output Capacitance
fT
Cob
Reverse Transfer Capacitance
Cre
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
typ
Unit
max
90
1.0
μA
5.0
μA
270
20
VCE=5V, IC=50mA
3.5
GHz
2.9
VCB=10V, f=1MHz
4.0
1.5
pF
pF
IC=50mA, IB=5mA
0.07
0.3
V
IC=50mA, IB=5mA
0.8
1.2
V
* : The 2SC5551A is classified by 50mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
Ordering Information
Package
Shipping
2SC5551AE-TD-E
Device
PCP
1,000pcs./reel
2SC5551AF-TD-E
PCP
1,000pcs./reel
IC -- VCE
500μA
450μA
80
300μA
250μA
200μA
150μA
IB=0μA
0
4
8
12
16
Collector-to-Emitter Voltage, VCE -- V
2
100
7
5
2
50μA
0
3
3
100μA
20
VCE=5V
5
350μA
40
hFE -- IC
7
400μA
60
Pb Free
1000
DC Current Gain, hFE
Collector Current, IC -- mA
100
memo
20
IT01066
10
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT01067
No. A1118-2/6
2SC5551A
VCE(sat) -- IC
7
IC / IB=10
Forward Transfer Gain, ⏐S21e⏐2 -- dB
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
0.1
7
5
3
2
1.0
3
3
2
5 7 10
5 7 100
3
2
z
0MH
f=50
10
8
6
4
2
1.0
3
2
7 10
5
3
5 7 100
2
5
Cob
2
Cre
3
1.0
5 7 1000
IT01069
fT -- IC
VCE=5V
7
7
3
2
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- GHz
Output Capacitance, Reverse Transfer Capacitance,
Cob, Cre -- pF
12
10
5
3
2
1.0
7
5
3
2
0.1
1.0
3
2
5
7
3
2
10
7
5
100
IT01070
Collector-to-Base Voltage, VCB -- V
1.0
2
3
ICP=600mA
1.2
Collector Dissipation, PC -- W
m
s
2
1m
10
s
op
era
tio
100
n
7
5
3
Ta=25°C
Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
10
1.0
2
3
5
7
10
2
Collector-to-Emitter Voltage, VCE -- V
5 7 100
2
3
5 7 1000
IT01071
When mounted on ceramic substrate
(250mm2✕0.8mm)
1.3
5
DC
3
PC -- Ta
1.4
IC=300mA
2
5 7 10
Collector Current, IC -- mA
ASO
1000
Collector Current, IC -- mA
14
IT15252
f=1MHz
2
Hz
M
0
20
f=
16
5 7
Cob, Cre -- VCB
10
3
VCE=5V
18
0
2
Collector Current, IC -- mA
7
⏐S21e⏐2 -- IC
20
1.0
0.8
0.6
0.4
0.2
0
3
5
IT01072
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT01073
No. A1118-3/6
2SC5551A
Bag Packing Specification
2SC5551AE-TD-E, 2SC5551AF-TD-E
No. A1118-4/6
2SC5551A
Outline Drawing
2SC5551AE-TD-E, 2SC5551AF-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No. A1118-5/6
2SC5551A
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PS No. A1118-6/6