BDY90
MECHANICAL DATA
NPN SILICON TRANSISTOR
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
FEATURES
1.52 (0.06)
3.43 (0.135)
2
•
•
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
•
V(BR)CEO = 100V (Min)
Hermetically Sealed TO3 Metal
Package
Screening Options Available
APPLICATIONS
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
•
Linear & Switching
Applications
TO3 (TO-204AA)
1 = Base
2 = Emitter
Case = Collector
ABSOLUTE MAXIMUM RATINGS ( Tc = 25°C unless otherwise stated)
VCEO
VCEV
VCBO
VEBO
IC
IB
PD
TJ
Tstg
Collector - Emitter Voltage
Collector - Emitter Voltage (VBE = -1.5V)
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation at
TC = 25°C
Derate Above 25°C
Junction Temperature
Storage Temperature
100V
120V
120V
6V
10A
15A
2A
60W
0.4W/°C
175°C
-65 to +175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8018, ISS 1
BDY90
Max
Unit
2.5
°C/W
Min. Typ. Max.
Unit
THERMAL CHARACTERISTICS
RθJC
Thermal resistance junction to case
ELECTRICAL CHARACTERISTICS (T
C
=25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC = 10mA
IB = 0
ICEV
Collector-Emitter Cut-Off Current
VCE = 120V
VBE = -1.5V
1.0
TC = 150°C
3
IEBO
Emitter-Base Cut-Off Current
IC = 0
VEB = 6V
1.0
ICBO
Collector-Base Cut-Off Current
IE = 0
VCB = 120V
1.0
IC = 1.0A
VCE = 2V
30
IC = 5.0A
VCE = 5V
30
IC = 10A
VCE = 5V
20
IC = 5A
IB = 500mA
0.5
IC = 10A
IB = 1.0A
1.5
IC = 5A
IB = 500mA
1.2
IC = 10A
IB = 1.0A
1.5
IC = 500mA
VCE = 5V
hFE*
VCE(sat)*
VBE(sat)*
Forward-current transfer ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturated Voltage
V
100
mA
120
V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
ton
Turn-On Time
ts
Storage Time
VCC = 30V
tf
Fall Time
IC= 5A
f = 10MHz
IE = 0
VCB = 10V
20
MHz
200
pF
f = 1.0MHz
VCC = 30V
IC = 5A
IB1= 0.5A
0.35
1.3
IB1 = -IB2 = 0.5A
µs
0.2
* Pulse test tp = 300µs, δ < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8018, ISS 1