Advanced Photonix offers the largest size APDs at tiie higiiest gain and
lowest noise. Tiiis can increase your sensitivity to low light levels, and reduce
the effects of amplifier noise for wide bandwidth and high frequency
applications.
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_
.
Advanced Photonix, Inc.
1240 Avenida Acaso, CamariUo CA 93012
(805) 987 0146 Fax: (805) 484 9935
L a r g e A P D standard Parts List
«
5 mm diameter APDs
Output Connection
Coating Window
Part Number
2 pin
IR
Bare
197-70-71-520
2 pin
m.
Glass
197-70-71-521
2 pin
VIS
Bare
197-70-72-520
2 pin
VIS
Glass
197-70-72-521
I
10 mm diameter APDs
1 pin (ground the case)
VIS
Bare
394-70-72-510
1 pin (ground the case)
VIS
Glass
394-70-72-511
10 mm APDs Special Order
for SHY connector, 6 weeks (unless in stock)
for IR coating, minimum order of 5 pieces + 6 weeks (unless in stock)
16 mm diameter APDs
SHV
VIS
Bare
630-70-72-500
SHY
VIS
Glass
630-70-72-501
1 1 pin (ground the case)
VIS
Bare
630-70-72-510
1 pin (ground the case)
VIS
Glass
630-70-72-511
16 mm APDs Special Order
for IR coating, minimum order of 5 pieces + 6 weeks (unless in stock)
If you need an APD in a custom shape or size, chances are we can
accommodate you...
Advanced Photonix, Inc.
1240 Avenida Acaso, CamariUo CA 93012 (805) 987 0146,Fax: (805) 484 9935
L a r g e A P D Preliminary Electro-Optical Characteristics @ T = 22 °C
Performance Parameters
197-70 series 394-70 series 630-70 series
Active Diameter (typical)
Active Area (typical)
5
10
16
19,6
78.5
201.1
units
mm
mm^
typical Total Efficiency E (Quantum x Absorption)
532 nm (-72 coating):
: 675 nm (772 coating):
840 nm (-71 coating):
73
82
74
%
%
%
typical Total Efficiency E @ Peak Wavelength
-71 coating (irifrared):
-72 coating (visible):
82
82
%
%
532 nm (-72 coating):
675 nm (-72 coating):
840 nm (-71 coating):
95
135
160
AAV
AAV
AAV
typical Responsivity R @ Gain =300, @ Peak Wavelength
-71 coating (infrared):
-72 coating (visible):
165
145
A/W
A/W
Highest Stable Gain M (typical)
500
Temperature Coefficient for Constant Gain
1,8
V/°C
-2450
typical Responsivity R at a Gain of 300
max. Dark Current l ^ @ Gain of 300
160
350
800
V
nA
Junction Capacitance Cj (typical) @ Gain of 300
25
50
no
pF
max. Dark Noise Current i ^ @ M=300 and 10 kHz
2
5
7
pA/Hz"'
24
18
14
40
26
22
54
36
32
fW/Hz"'
fW/Hz""
fW/Hz"'
11
90
13
100
15
140
%FWHM
Break(k)wn Voltage \^„ (typical)
Noise Equivalent Power NEP (typical) @ M = 300
532 nm:
675 nm:
840 nm:
Direct X-ray Detection typical Resolution, "Fe (5.9 keV)
•
max. Equivalent Noise Charge ENC, 100 ns shaping time
electrons
5
ns
typical/max. Square Wave (Step) Response t„, 50 ohm load
30/50
ns
typical Dynamic Range with <3% nonlinearity
10*: 1
max. Impulse Risetime t^ , 50 ohm load
typical 3 dB Bandwidth
43
typical Surface Uniformity, with 100 micron laser spot
29
+/-5
17
MHz
160
400
400
10^ Amps
1000
mW
%
Maximum Ratings
Maximum Reverse Bias Current @ 22 °C (average value)
Maximum Power Dissipation @ 22 °C (average value)
60
150
Storage Temperature
-60 to +100
Operating Temperature
-«)to+70
Soldering Temperature, for 5 seconds
200
°C
T
"C
5,10,16 mm Diameter APDs
Typical Performance Specifications
100
90
80
70
.
•72
V
-
)y
y
60
sn
y
10
/
30
20
10
0 -
I
i
yr
J
•
•
\.
^
>
/
/
-
•^
/
s
. -' 1
^
....
•
J
•
v
/
^
V
\
/
/
' ^ /
/
^
^
/
40
20
0
\
^
/
(^
y
/
/
"^
X
^
80
60
\
r
200
180
160
140
120
100
"y
•>k
r^
r
/ y
r
,/
\
-11
4r
sA
\^
r
S,A
r
•
300
400
500
600
700
800
900
1000 1100
300
400
500
600
Wavelength, nm
700
800
900
1000 1100
Wavelength, ran
Responsivity ( A / W ) @ G a i n of 300
Tcrtal Efficiency ( % ) vs Wavelength
lOOQ:
16
1000
::
—
—1
'^
^
^^
••
^
..
100
'
=
>•
•
0
500
1000
1500
Volts
2000
2500
^
10
^
.•'
=
-
•
'••••
1
^^
/
1
y
::
^
10
=
./
c*
^
\=A
100
1000
Dark Current (nA) vsGain
Gain vs Reverse Bias
Advanced Photonix Inc., 1240 Avenida Acaso, CamariUo CA (805) 987 0146 Fax: (805) 484 2884
5,10,16 mm Diameter APDs /Typical Performance Specifications
•
lUUU
:: _
532 nm
V
vN.
675 nm
^^^ \
840 nm
100
V:
$ ^ .
-^5'
-^ ; ; _ _ ^
- = :::
• ^
'
10
100
10
1000
16 mm NEP (fW/Hz"^) vs Gain @ 22C
ILL
1000
1II
II II
1
1000
'
:
'
1
•
1
532 nm
675 nm
s.
840 nm
100
^j
E
E
—
532 nm
675 nm '
^^s
\
E
s 5 «:;
•^
.,
—
. _^
- •
—1 ^ ;
:
10
J
*'
..
'
V
j
^^
^ .: ^^ >>
V
<:: V "
•s,
•>s
*
10
100
— ———
1
^^ ^ -
zi
10
100
1000
5 mm NEP (fW/Hz"^) vs Gain @ 22C
— —
,
— ———
—
=
1000
10 mm NEP (fW/Hz''^) vs Gain @ 22C
———— — <<*
y /
r
/
l-_
1
^ s
s; ^>t i\
il
II
10
N
840 nm
100 ^
<v
s
1
I
— —
/
z'
y
y
^
y
y
—— ——
/
)
01
— ———
/,
/
/
/
/
-50
-40
-30
4
/ /
—
—
— ——
— ——
1
^
-20
-10
0
10
20
30
40
50
degrees Celsius
Relative Shot Noise vs Temperature
Advanced Photonix Inc., 1240 Avenida Acaso, CamariUo CA (805) 987 0146 Fax: (805) 484 2884